Wafer-scale pixelated detector system

Fahim, Farah; Deptuch, Grzegorz; Zimmerman, Tom

Title: Wafer-scale pixelated detector system

Abstract

A large area, gapless, detection system comprises at least one sensor; an interposer operably connected to the at least one sensor; and at least one application specific integrated circuit operably connected to the sensor via the interposer wherein the detection system provides high dynamic range while maintaining small pixel area and low power dissipation. Thereby the invention provides methods and systems for a wafer-scale gapless and seamless detector systems with small pixels, which have both high dynamic range and low power dissipation.

Inventors:: Fahim, Farah; Deptuch, Grzegorz; Zimmerman, Tom

Issue Date:: 2018-09-25

Research Org.:: Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1482172

Patent Number(s):: 10084983

Application Number:: 15/167,595

Assignee:: Fermi Research Alliance, LLC (Batavia, IL)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H04 - ELECTRIC COMMUNICATION TECHNIQUE H04N - PICTORIAL COMMUNICATION, e.g. TELEVISION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/14623 - {Optical shielding}

H - ELECTRICITY H04 - ELECTRIC COMMUNICATION TECHNIQUE H04N - PICTORIAL COMMUNICATION, e.g. TELEVISION
H04N5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
H04N5/32 - Transforming X-rays {

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/1469 - {Assemblies, i.e. hybrid integration}
H01L27/14687 - {Wafer level processing}
H01L27/14632 - {Wafer-level processed structures}

H - ELECTRICITY H04 - ELECTRIC COMMUNICATION TECHNIQUE H04N - PICTORIAL COMMUNICATION, e.g. TELEVISION
H04N5/374 - Addressed sensors, e.g. MOS or CMOS sensors
H04N5/351 - Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
H04N5/335 - using solid-state image sensors [SSIS]
H04N5/379 - {Details of the architecture or circuitry being divided to different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/14636 - {Interconnect structures}
H01L27/14634 - {Assemblies, i.e. Hybrid structures}
H01L27/14661 - {of the hybrid type}

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DOE Contract Number:: AC02-07CH11359

Resource Type:: Patent

Resource Relation:: Patent File Date: 2016 May 27

Country of Publication:: United States

Language:: English

Citation Formats


                    Fahim, Farah, Deptuch, Grzegorz, and Zimmerman, Tom. Wafer-scale pixelated detector system.  United States: N. p., 2018. 
        Web.

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                    Fahim, Farah, Deptuch, Grzegorz, & Zimmerman, Tom. Wafer-scale pixelated detector system.  United States.

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                    Fahim, Farah, Deptuch, Grzegorz, and Zimmerman, Tom. Tue .  
        "Wafer-scale pixelated detector system".  United States.  https://www.osti.gov/servlets/purl/1482172.

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@article{osti_1482172,

  title        = {Wafer-scale pixelated detector system},

  author       = {Fahim, Farah and Deptuch, Grzegorz and Zimmerman, Tom},

  abstractNote = {A large area, gapless, detection system comprises at least one sensor; an interposer operably connected to the at least one sensor; and at least one application specific integrated circuit operably connected to the sensor via the interposer wherein the detection system provides high dynamic range while maintaining small pixel area and low power dissipation. Thereby the invention provides methods and systems for a wafer-scale gapless and seamless detector systems with small pixels, which have both high dynamic range and low power dissipation.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {9}

}

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Works referenced in this record:

Challenges in chip design for the AGIPD detector
journal, December 2010

Shi, X.; Dinapoli, R.; Henrich, B.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 624, Issue 2, p. 387-391
https://doi.org/10.1016/j.nima.2010.05.038

A Dynamic Slew Correction Circuit for Low Noise Silicon Detector Pre-amplifiers
journal, June 2012

Ip, Henry M. D.; Thomas, Stephen; Hart, Matthew
IEEE Transactions on Nuclear Science, Vol. 59, Issue 3, p. 642-646
https://doi.org/10.1109/TNS.2012.2189129

Development of the LPD, a high dynamic range pixel detector for the European XFEL
conference, October 2012

Hart, Mathew; Angelsen, C.; Burge, S.
https://doi.org/10.1109/NSSMIC.2012.6551165

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Title: Wafer-scale pixelated detector system

Abstract

Citation Formats

Challenges in chip design for the AGIPD detector journal, December 2010

A Dynamic Slew Correction Circuit for Low Noise Silicon Detector Pre-amplifiers journal, June 2012

Development of the LPD, a high dynamic range pixel detector for the European XFEL conference, October 2012

Challenges in chip design for the AGIPD detector
journal, December 2010

A Dynamic Slew Correction Circuit for Low Noise Silicon Detector Pre-amplifiers
journal, June 2012

Development of the LPD, a high dynamic range pixel detector for the European XFEL
conference, October 2012