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Title: Hyperuniform and nearly hyperuniform random network materials

This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1478740
Assignee:
The Trustees of Princeton University (Princeton, NJ) CHO
Patent Number(s):
10,059,596
Application Number:
14/891,568
Contract Number:
FG02-04ER46108
Resource Relation:
Patent File Date: 2014 May 09
Research Org:
The Trustees of Princeton University, Princeton, NJ (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Complete band gaps in two-dimensional photonic quasicrystals
journal, October 2009
  • Florescu, Marian; Torquato, Salvatore; Steinhardt, Paul J.
  • Physical Review B, Vol. 80, Issue 15, Article No. 155112
  • DOI: 10.1103/PhysRevB.80.155112