Hyperuniform and nearly hyperuniform random network materials
Abstract
This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.
- Inventors:
- Issue Date:
- Research Org.:
- Princeton Univ., NJ (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1478740
- Patent Number(s):
- 10059596
- Application Number:
- 14/891,568
- Assignee:
- The Trustees of Princeton University (Princeton, NJ)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG02-04ER46108
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 May 09
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Steinhardt, Paul J., Torquato, Salvatore, and Hejna, Miroslav. Hyperuniform and nearly hyperuniform random network materials. United States: N. p., 2018.
Web.
Steinhardt, Paul J., Torquato, Salvatore, & Hejna, Miroslav. Hyperuniform and nearly hyperuniform random network materials. United States.
Steinhardt, Paul J., Torquato, Salvatore, and Hejna, Miroslav. Tue .
"Hyperuniform and nearly hyperuniform random network materials". United States. https://www.osti.gov/servlets/purl/1478740.
@article{osti_1478740,
title = {Hyperuniform and nearly hyperuniform random network materials},
author = {Steinhardt, Paul J. and Torquato, Salvatore and Hejna, Miroslav},
abstractNote = {This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {8}
}
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