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Title: Hyperuniform and nearly hyperuniform random network materials

Abstract

This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.

Inventors:
; ;
Issue Date:
Research Org.:
The Trustees of Princeton University, Princeton, NJ (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1478740
Patent Number(s):
10,059,596
Application Number:
14/891,568
Assignee:
The Trustees of Princeton University (Princeton, NJ)
DOE Contract Number:  
FG02-04ER46108
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 May 09
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Steinhardt, Paul J., Torquato, Salvatore, and Hejna, Miroslav. Hyperuniform and nearly hyperuniform random network materials. United States: N. p., 2018. Web.
Steinhardt, Paul J., Torquato, Salvatore, & Hejna, Miroslav. Hyperuniform and nearly hyperuniform random network materials. United States.
Steinhardt, Paul J., Torquato, Salvatore, and Hejna, Miroslav. Tue . "Hyperuniform and nearly hyperuniform random network materials". United States. https://www.osti.gov/servlets/purl/1478740.
@article{osti_1478740,
title = {Hyperuniform and nearly hyperuniform random network materials},
author = {Steinhardt, Paul J. and Torquato, Salvatore and Hejna, Miroslav},
abstractNote = {This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {8}
}

Patent:

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