Systems and methods to maintain optimum stoichiometry for reactively sputtered films
Abstract
The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1478528
- Patent Number(s):
- 10074522
- Application Number:
- 14/671,284
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Mar 27
- Country of Publication:
- United States
- Language:
- English
Citation Formats
. Systems and methods to maintain optimum stoichiometry for reactively sputtered films. United States: N. p., 2018.
Web.
. Systems and methods to maintain optimum stoichiometry for reactively sputtered films. United States.
. Tue .
"Systems and methods to maintain optimum stoichiometry for reactively sputtered films". United States. https://www.osti.gov/servlets/purl/1478528.
@article{osti_1478528,
title = {Systems and methods to maintain optimum stoichiometry for reactively sputtered films},
author = {},
abstractNote = {The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {9}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
The missing memristor found
journal, May 2008
- Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R.
- Nature, Vol. 453, Issue 7191
Multilayer memristive/memcapacitive devices with engineered conduction fronts
journal, June 2013
- Mickel, Patrick R.; James, Conrad D.
- The European Physical Journal Applied Physics, Vol. 62, Issue 3, Article No. 30102
Partial pressure control of reactively sputtered titanium nitride
journal, May 1985
- Hmiel, A. F.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 3, Issue 3, p. 592-595
Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications
journal, March 2014
- Stevens, James E.; Lohn, Andrew J.; Decker, Seth A.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2, Article No. 021501
Engineering nonlinearity into memristors for passive crossbar applications
journal, March 2012
- Joshua Yang, J.; Zhang, M.-X.; Pickett, Matthew D.
- Applied Physics Letters, Vol. 100, Issue 11, Article No. 113501
High switching endurance in TaOx memristive devices
journal, December 2010
- Yang, J. Joshua; Zhang, M. -X.; Strachan, John Paul
- Applied Physics Letters, Vol. 97, Issue 23
Nanoionics-based resistive switching memories
journal, November 2007
- Waser, Rainer; Aono, Masakazu
- Nature Materials, Vol. 6, Issue 11, p. 833-840
Enhanced sputtering of titanium oxide, nitride and oxynitride thin films by the reactive gas pulsing technique
journal, July 2001
- Martin, N.; Sanjinés, R.; Takadoum, J.
- Surface and Coatings Technology, Vol. 142-144, p. 615-620
A CMOS Compatible, Forming Free TaOx ReRAM
journal, August 2013
- Lohn, A. J.; Stevens, J. E.; Mickel, P. R.
- ECS Transactions, Vol. 58, Issue 5, p. 59-65
Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region”
journal, August 2013
- Lohn, Andrew J.; Stevens, James E.; Mickel, Patrick R.
- Applied Physics Letters, Vol. 103, Issue 6, Article No. 063502
Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
journal, February 2012
- Miao, Feng; Yi, Wei; Goldfarb, Ilan
- ACS Nano, Vol. 6, Issue 3, p. 2312-2318
Isothermal Switching and Detailed Filament Evolution in Memristive Systems
journal, April 2014
- Mickel, Patrick R.; Lohn, Andrew J.; James, Conrad D.
- Advanced Materials, Vol. 26, Issue 26, p. 4486-4490
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011
- Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
- Nature Materials, Vol. 10, Issue 8, p. 625-630
Detection and characterization of multi-filament evolution during resistive switching
journal, August 2014
- Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.
- Applied Physics Letters, Vol. 105, Issue 5, Article No. 053503
Process for fabricating a microelectromechanical structure
patent, October 2004
- Sniegowski, Jeffry J.; Krygowski, Thomas W.; Mani, Seethambal S.
- US Patent Document 6,808,952
Memristive devices for computing
journal, January 2013
- Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
- Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
journal, April 2010
- Jo, Sung Hyun; Chang, Ting; Ebong, Idongesit
- Nano Letters, Vol. 10, Issue 4, p. 1297-1301
Memristive switching: physical mechanisms and applications
journal, April 2014
- Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.
- Modern Physics Letters B, Vol. 28, Issue 10, Article No. 1430003
Low power ReRAM with Fab-friendly materials through PVD morphology and stoichiometry control
conference, April 2011
- Otani, Yuichi; Gilmer, David C.; Park, Hokyung
- 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications
Degenerate resistive switching and ultrahigh density storage in resistive memory
journal, September 2014
- Lohn, Andrew J.; Mickel, Patrick R.; James, Conrad D.
- Applied Physics Letters, Vol. 105, Issue 10, Article No. 103501
Forming-free resistive switching of TiOx layers with oxygen injection treatments
conference, April 2011
- Hsieh, Chun-I; Jao, Jui-Hsiu; Chen, Wei-Chia
- 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications
Reactive sputtering characteristics of silicon in an ArN2 mixture
journal, March 1986
- Okamoto, A.; Serikawa, T.
- Thin Solid Films, Vol. 137, Issue 1, p. 143-151
Reactive D.C. sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films
journal, November 1979
- Schiller, S.; Heisig, U.; Steinfelder, K.
- Thin Solid Films, Vol. 63, Issue 2, p. 369-375
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009
- Waser, Rainer; Dittmann, Regina; Staikov, Georgi
- Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663
Analytical estimations for thermal crosstalk, retention, and scaling limits in filamentary resistive memory
journal, June 2014
- Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J.
- Journal of Applied Physics, Vol. 115, Issue 23, Article No. 234507
Mechanism of electrical shorting failure mode in resistive switching
journal, July 2014
- Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J.
- Journal of Applied Physics, Vol. 116, Issue 3, Article No. 034506
Reactive sputter deposition of titanium dioxide
journal, February 2000
- Dannenberg, Rand; Greene, Phil
- Thin Solid Films, Vol. 360, Issue 1-2, p. 122-127
High rate reactive sputtering process control
journal, December 1987
- Sproul, William D.
- Surface and Coatings Technology, Vol. 33, p. 73-81
Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
conference, December 2008
- Wei, Z.; Kanzawa, Y.; Arita, K.
- 2008 IEEE International Electron Devices Meeting (IEDM)
Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
conference, December 2008
- Lee, H. Y.; Chen, P. S.; Wu, T. Y.
- 2008 IEEE International Electron Devices Meeting (IEDM)
Hysteresis effect in reactive sputtering: a problem of system stability
journal, September 1986
- Kadlec, S.; Musil, J.; Vyskocil, H.
- Journal of Physics D: Applied Physics, Vol. 19, Issue 9
A physical model of switching dynamics in tantalum oxide memristive devices
journal, June 2013
- Mickel, Patrick R.; Lohn, Andrew J.; Joon Choi, Byung
- Applied Physics Letters, Vol. 102, Issue 22, Article No. 223502
Modeling of reactive sputtering of compound materials
journal, March 1987
- Berg, S.; Blom, H‐O.; Larsson, T.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 5, Issue 2, p. 202-207
Control of reactive sputtering processes
journal, November 2005
- Sproul, W. D.; Christie, D. J.; Carter, D. C.
- Thin Solid Films, Vol. 491, Issue 1-2, p. 1-17
A physical model for eliminating instabilities in reactive sputtering
journal, May 1988
- Larsson, T.; Blom, H‐O.; Nender, C.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 6, Issue 3, p. 1832-1836
Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching
journal, October 2013
- Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J.
- Applied Physics Letters, Vol. 103, Issue 17, Article No. 173503
Reactive gas control of non-stable plasma conditions
journal, April 2006
- Bellido-González, V.; Daniel, B.; Counsell, J.
- Thin Solid Films, Vol. 502, Issue 1-2, p. 34-39
Chemical insight into origin of forming-free resistive random-access memory devices
journal, September 2011
- Wu, X.; Fang, Z.; Li, K.
- Applied Physics Letters, Vol. 99, Issue 13, Article No. 133504
Modeling of filamentary resistive memory by concentric cylinders with variable conductivity
journal, November 2014
- Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J.
- Applied Physics Letters, Vol. 105, Issue 18, Article No. 183511
Reactive high rate D.C. sputtering: Deposition rate, stoichiometry and features of TiOx and TiNx films with respect to the target mode
journal, January 1984
- Schiller, S.; Beister, G.; Sieber, W.
- Thin Solid Films, Vol. 111, Issue 3, p. 259-268
Metal oxide memories based on thermochemical and valence change mechanisms
journal, February 2012
- Yang, J. Joshua; Inoue, Isao H.; Mikolajick, Thomas
- MRS Bulletin, Vol. 37, Issue 2, p. 131-137
Erratum: The missing memristor found
journal, June 2009
- Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R.
- Nature, Vol. 459, Issue 7250, p. 1154-1154
Spectromicroscopy of tantalum oxide memristors
journal, June 2011
- Strachan, John Paul; Medeiros-Ribeiro, Gilberto; Yang, J. Joshua
- Applied Physics Letters, Vol. 98, Issue 24, Article No. 242114
Memristor using a transition metal nitride insulator
patent, October 2014
- Stevens, James E.; Marinella, Matthew; Lohn, Andrew
- US Patent Document 8,872,246
Statistical insight into controlled forming and forming free stacks for HfOx RRAM
journal, September 2013
- Raghavan, N.; Fantini, A.; Degraeve, R.
- Microelectronic Engineering, Vol. 109, p. 177-181
Passive electrically switchable circuit element having improved tunability and method for its manufacture
patent, September 2014
- Mickel, Patrick R.; James, Conrad D.
- US Patent Document 8,835,272