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Title: Systems and methods to maintain optimum stoichiometry for reactively sputtered films

The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.
Issue Date:
OSTI Identifier:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2015 Mar 27
Research Org:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

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