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Title: Systems and methods to maintain optimum stoichiometry for reactively sputtered films

Abstract

The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.

Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1478528
Patent Number(s):
10074522
Application Number:
14/671,284
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Mar 27
Country of Publication:
United States
Language:
English

Citation Formats

. Systems and methods to maintain optimum stoichiometry for reactively sputtered films. United States: N. p., 2018. Web.
. Systems and methods to maintain optimum stoichiometry for reactively sputtered films. United States.
. Tue . "Systems and methods to maintain optimum stoichiometry for reactively sputtered films". United States. https://www.osti.gov/servlets/purl/1478528.
@article{osti_1478528,
title = {Systems and methods to maintain optimum stoichiometry for reactively sputtered films},
author = {},
abstractNote = {The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {9}
}

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