Title: Radio frequency field immersed ultra-low temperature electron source

Abstract

Disclosed below are representative embodiments of methods, apparatus, and systems for generating electrons. For example, certain embodiments comprise a charge gating diamond QED based electron source, which can be suspended within the RF cavity of an electron injection system in a superconducting radiofrequency (SRF) electron accelerator. Embodiments of the disclosed technology are capable of producing low temperature (cold) electron beams, where "temperature" refers to the transverse energy in the extracted electron beam (or beam emittance). Embodiments of the disclosed technology can also exhibit enhanced charge replenishment capabilities by virtue of the material selected to suspend the electron source within the RF cavity of the electron injection system.

Inventors:

Shurter, Roger; Taccetti, Jose

Issue Date:

2018-08-14

Research Org.:

Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1467434

Patent Number(s):

10051720

Application Number:

15/205,981

Assignee:

Los Alamos National Security, LLC (Los Alamos, NM)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05H - PLASMA TECHNIQUE

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

H01J1/308 - Semiconductor cathodes, e.g. cathodes with PN junction layers
H01J1/34 - Photo-emissive cathodes
H01J2201/30476 - Diamond-like carbon [DLC]

H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05H - PLASMA TECHNIQUE

H05H2007/084 - {Electron sources}
H05H7/20 - with superconductive walls

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DOE Contract Number:  

AC52-06NA25396

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Jul 08

Country of Publication:

United States

Language:

English