High quality large scale single and multilayer graphene production by chemical vapor deposition
Abstract
Systems and methods for synthesizing continuous graphene sheets are provided. The systems and methods include passing a catalyst substrate through a heated chemical vapor deposition chamber and exposing the substrate to a reaction gas mixture of hydrogen and hydrocarbon at a preselected location within the chamber. The reaction gas mixture can include hydrogen having a partial pressure of between about 0 Torr and 20 Torr, hydrocarbon having a partial pressure of between about 20 mTorr and about 10 Torr, and one or more buffer gases. The buffer gases can include argon or other noble gases to maintain atmospheric pressure within the chemical deposition chamber. The resulting graphene can be made with continuous mono and multilayers (up to six layers) and have single crystalline hexagonal grains with a preselected nucleation density and domain size for a range of applications.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1467383
- Patent Number(s):
- 10023468
- Application Number:
- 13/734,823
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Jan 04
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Vlassiouk, Ivan V., Smirnov, Sergei N., Peter, William H., Sabau, Adrian S., Dai, Sheng, Fulvio, Pasquale F., Ivanov, Ilia N., Lavrik, Nickolay V., and Datskos, Panagiotis G. High quality large scale single and multilayer graphene production by chemical vapor deposition. United States: N. p., 2018.
Web.
Vlassiouk, Ivan V., Smirnov, Sergei N., Peter, William H., Sabau, Adrian S., Dai, Sheng, Fulvio, Pasquale F., Ivanov, Ilia N., Lavrik, Nickolay V., & Datskos, Panagiotis G. High quality large scale single and multilayer graphene production by chemical vapor deposition. United States.
Vlassiouk, Ivan V., Smirnov, Sergei N., Peter, William H., Sabau, Adrian S., Dai, Sheng, Fulvio, Pasquale F., Ivanov, Ilia N., Lavrik, Nickolay V., and Datskos, Panagiotis G. Tue .
"High quality large scale single and multilayer graphene production by chemical vapor deposition". United States. https://www.osti.gov/servlets/purl/1467383.
@article{osti_1467383,
title = {High quality large scale single and multilayer graphene production by chemical vapor deposition},
author = {Vlassiouk, Ivan V. and Smirnov, Sergei N. and Peter, William H. and Sabau, Adrian S. and Dai, Sheng and Fulvio, Pasquale F. and Ivanov, Ilia N. and Lavrik, Nickolay V. and Datskos, Panagiotis G.},
abstractNote = {Systems and methods for synthesizing continuous graphene sheets are provided. The systems and methods include passing a catalyst substrate through a heated chemical vapor deposition chamber and exposing the substrate to a reaction gas mixture of hydrogen and hydrocarbon at a preselected location within the chamber. The reaction gas mixture can include hydrogen having a partial pressure of between about 0 Torr and 20 Torr, hydrocarbon having a partial pressure of between about 20 mTorr and about 10 Torr, and one or more buffer gases. The buffer gases can include argon or other noble gases to maintain atmospheric pressure within the chemical deposition chamber. The resulting graphene can be made with continuous mono and multilayers (up to six layers) and have single crystalline hexagonal grains with a preselected nucleation density and domain size for a range of applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {7}
}
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Works referenced in this record:
Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst
journal, October 2010
- Bhaviripudi, Sreekar; Jia, Xiaoting; Dresselhaus, Mildred S.
- Nano Letters, Vol. 10, Issue 10, p. 4128-4133
Continuous roll-to-roll growth of graphene films by chemical vapor deposition
journal, March 2011
- Hesjedal, Thorsten
- Applied Physics Letters, Vol. 98, Issue 13, Article No. 133106
Graphene synthesis by chemical vapor deposition
patent, June 2013
- Colombo, Luigi; Li, Xuesong; Ruoff, Rodney S.
- US Patent Document 8,470,400
Graphene CVD growth on copper and nickel: role of hydrogen in kinetics and structure
journal, January 2011
- Losurdo, Maria; Giangregorio, Maria Michela; Capezzuto, Pio
- Physical Chemistry Chemical Physics, Vol. 13, Issue 46, Article No. 20836
Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth
journal, October 2011
- Han, Gang Hee; Güneş, Fethullah; Bae, Jung Jun
- Nano Letters, Vol. 11, Issue 10, p. 4144-4148
Large-Area Single- and Few-Layer Graphene on Arbitrary Substrates
patent-application, January 2010
- Kong, Jing; Cecco, Alfonso Reina; Dresselhaus, Mildred S.
- US Patent Application 12/422747; 20100021708
Graphene sheet and process of preparing the same
patent, December 2011
- Choi, Jae Young; Shin, Hyeon-jin; Yoon, Seon-mi
- US Patent Document 8,075,864
Role of Hydrogen in Chemical Vapor Deposition Growth of Large Single-Crystal Graphene
journal, July 2011
- Vlassiouk, Ivan; Regmi, Murari; Fulvio, Pasquale
- ACS Nano, Vol. 5, Issue 7, p. 6069-6076
Methods of Fabricating Large-Area, Semiconducting Nanoperforated Graphene Materials
patent-application, August 2011
- Arnold, Michael S.; Gopalan, Padma; Safron, Nathaniel S.
- US Patent Application 13/013531; 20110201201
Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure
journal, September 2011
- Dong, Xiaochen; Wang, Peng; Fang, Wenjing
- Carbon, Vol. 49, Issue 11