High quality large scale single and multilayer graphene production by chemical vapor deposition
Abstract
Systems and methods for synthesizing continuous graphene sheets are provided. The systems and methods include passing a catalyst substrate through a heated chemical vapor deposition chamber and exposing the substrate to a reaction gas mixture of hydrogen and hydrocarbon at a preselected location within the chamber. The reaction gas mixture can include hydrogen having a partial pressure of between about 0 Torr and 20 Torr, hydrocarbon having a partial pressure of between about 20 mTorr and about 10 Torr, and one or more buffer gases. The buffer gases can include argon or other noble gases to maintain atmospheric pressure within the chemical deposition chamber. The resulting graphene can be made with continuous mono and multilayers (up to six layers) and have single crystalline hexagonal grains with a preselected nucleation density and domain size for a range of applications.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1467383
- Patent Number(s):
- 10023468
- Application Number:
- 13/734,823
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Jan 04
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Vlassiouk, Ivan V., Smirnov, Sergei N., Peter, William H., Sabau, Adrian S., Dai, Sheng, Fulvio, Pasquale F., Ivanov, Ilia N., Lavrik, Nickolay V., and Datskos, Panagiotis G. High quality large scale single and multilayer graphene production by chemical vapor deposition. United States: N. p., 2018.
Web.
Vlassiouk, Ivan V., Smirnov, Sergei N., Peter, William H., Sabau, Adrian S., Dai, Sheng, Fulvio, Pasquale F., Ivanov, Ilia N., Lavrik, Nickolay V., & Datskos, Panagiotis G. High quality large scale single and multilayer graphene production by chemical vapor deposition. United States.
Vlassiouk, Ivan V., Smirnov, Sergei N., Peter, William H., Sabau, Adrian S., Dai, Sheng, Fulvio, Pasquale F., Ivanov, Ilia N., Lavrik, Nickolay V., and Datskos, Panagiotis G. Tue .
"High quality large scale single and multilayer graphene production by chemical vapor deposition". United States. https://www.osti.gov/servlets/purl/1467383.
@article{osti_1467383,
title = {High quality large scale single and multilayer graphene production by chemical vapor deposition},
author = {Vlassiouk, Ivan V. and Smirnov, Sergei N. and Peter, William H. and Sabau, Adrian S. and Dai, Sheng and Fulvio, Pasquale F. and Ivanov, Ilia N. and Lavrik, Nickolay V. and Datskos, Panagiotis G.},
abstractNote = {Systems and methods for synthesizing continuous graphene sheets are provided. The systems and methods include passing a catalyst substrate through a heated chemical vapor deposition chamber and exposing the substrate to a reaction gas mixture of hydrogen and hydrocarbon at a preselected location within the chamber. The reaction gas mixture can include hydrogen having a partial pressure of between about 0 Torr and 20 Torr, hydrocarbon having a partial pressure of between about 20 mTorr and about 10 Torr, and one or more buffer gases. The buffer gases can include argon or other noble gases to maintain atmospheric pressure within the chemical deposition chamber. The resulting graphene can be made with continuous mono and multilayers (up to six layers) and have single crystalline hexagonal grains with a preselected nucleation density and domain size for a range of applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 17 00:00:00 EDT 2018},
month = {Tue Jul 17 00:00:00 EDT 2018}
}
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