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Title: High quality large scale single and multilayer graphene production by chemical vapor deposition

Abstract

Systems and methods for synthesizing continuous graphene sheets are provided. The systems and methods include passing a catalyst substrate through a heated chemical vapor deposition chamber and exposing the substrate to a reaction gas mixture of hydrogen and hydrocarbon at a preselected location within the chamber. The reaction gas mixture can include hydrogen having a partial pressure of between about 0 Torr and 20 Torr, hydrocarbon having a partial pressure of between about 20 mTorr and about 10 Torr, and one or more buffer gases. The buffer gases can include argon or other noble gases to maintain atmospheric pressure within the chemical deposition chamber. The resulting graphene can be made with continuous mono and multilayers (up to six layers) and have single crystalline hexagonal grains with a preselected nucleation density and domain size for a range of applications.

Inventors:
; ; ; ; ; ; ; ;
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1467383
Patent Number(s):
10023468
Application Number:
13/734,823
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jan 04
Country of Publication:
United States
Language:
English

Citation Formats

Vlassiouk, Ivan V., Smirnov, Sergei N., Peter, William H., Sabau, Adrian S., Dai, Sheng, Fulvio, Pasquale F., Ivanov, Ilia N., Lavrik, Nickolay V., and Datskos, Panagiotis G. High quality large scale single and multilayer graphene production by chemical vapor deposition. United States: N. p., 2018. Web.
Vlassiouk, Ivan V., Smirnov, Sergei N., Peter, William H., Sabau, Adrian S., Dai, Sheng, Fulvio, Pasquale F., Ivanov, Ilia N., Lavrik, Nickolay V., & Datskos, Panagiotis G. High quality large scale single and multilayer graphene production by chemical vapor deposition. United States.
Vlassiouk, Ivan V., Smirnov, Sergei N., Peter, William H., Sabau, Adrian S., Dai, Sheng, Fulvio, Pasquale F., Ivanov, Ilia N., Lavrik, Nickolay V., and Datskos, Panagiotis G. Tue . "High quality large scale single and multilayer graphene production by chemical vapor deposition". United States. https://www.osti.gov/servlets/purl/1467383.
@article{osti_1467383,
title = {High quality large scale single and multilayer graphene production by chemical vapor deposition},
author = {Vlassiouk, Ivan V. and Smirnov, Sergei N. and Peter, William H. and Sabau, Adrian S. and Dai, Sheng and Fulvio, Pasquale F. and Ivanov, Ilia N. and Lavrik, Nickolay V. and Datskos, Panagiotis G.},
abstractNote = {Systems and methods for synthesizing continuous graphene sheets are provided. The systems and methods include passing a catalyst substrate through a heated chemical vapor deposition chamber and exposing the substrate to a reaction gas mixture of hydrogen and hydrocarbon at a preselected location within the chamber. The reaction gas mixture can include hydrogen having a partial pressure of between about 0 Torr and 20 Torr, hydrocarbon having a partial pressure of between about 20 mTorr and about 10 Torr, and one or more buffer gases. The buffer gases can include argon or other noble gases to maintain atmospheric pressure within the chemical deposition chamber. The resulting graphene can be made with continuous mono and multilayers (up to six layers) and have single crystalline hexagonal grains with a preselected nucleation density and domain size for a range of applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {7}
}

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Works referenced in this record:

Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst
journal, October 2010


Continuous roll-to-roll growth of graphene films by chemical vapor deposition
journal, March 2011


Graphene CVD growth on copper and nickel: role of hydrogen in kinetics and structure
journal, January 2011

  • Losurdo, Maria; Giangregorio, Maria Michela; Capezzuto, Pio
  • Physical Chemistry Chemical Physics, Vol. 13, Issue 46, Article No. 20836
  • https://doi.org/10.1039/c1cp22347j

Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth
journal, October 2011


Role of Hydrogen in Chemical Vapor Deposition Growth of Large Single-Crystal Graphene
journal, July 2011