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Title: Process for large-scale ammonothermal manufacturing of gallium nitride boules

Abstract

Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

Inventors:
; ; ;
Issue Date:
Research Org.:
SLT Technologies, Inc., Los Angeles, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1465761
Patent Number(s):
10036099
Application Number:
14/599,335
Assignee:
SLT Technologies, Inc. (Los Angeles, CA)
Patent Classifications (CPCs):
B - PERFORMING OPERATIONS B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL B01J - CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY
B - PERFORMING OPERATIONS B30 - PRESSES B30B - PRESSES IN GENERAL
DOE Contract Number:  
SC0006168
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jan 16
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C. Process for large-scale ammonothermal manufacturing of gallium nitride boules. United States: N. p., 2018. Web.
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., & Downey, Bradley C. Process for large-scale ammonothermal manufacturing of gallium nitride boules. United States.
D'Evelyn, Mark P., Ehrentraut, Dirk, Kamber, Derrick S., and Downey, Bradley C. Tue . "Process for large-scale ammonothermal manufacturing of gallium nitride boules". United States. https://www.osti.gov/servlets/purl/1465761.
@article{osti_1465761,
title = {Process for large-scale ammonothermal manufacturing of gallium nitride boules},
author = {D'Evelyn, Mark P. and Ehrentraut, Dirk and Kamber, Derrick S. and Downey, Bradley C.},
abstractNote = {Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {7}
}

Works referenced in this record:

High electron mobility heterojunction device
patent-application, May 2010


Metal-infiltrated polycrystalline diamond composite tool formed from coated diamond particles
patent, April 2003


High indium containing InGaN substrates for long wavelength optical devices
patent, November 2012


A GaN bulk crystal with improved structural quality grown by the ammonothermal method
journal, July 2007


Continuous-Wave Operation of m -Plane InGaN Multiple Quantum Well Laser Diodes
journal, February 2007


High Light Extraction Efficiency Nitride Based Light Emitting Diode by Surface Roughening
patent-application, June 2009


Crystal growth apparatus and process
patent, December 1992


Method of growing electrical conductors
patent, June 2006


High Temperature High Pressure Capsule for Processing Materials in Supercritical Fluids
patent-application, July 2005


Red emitting phosphor materials for use in LED and LCD applications
patent, April 2008


Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
patent, August 2007


Heat-conducting thermoplastic compounds and uses thereof
patent, November 2011


Nitride Semiconductor Light Emitting Device and Method of Fabricating Nitride Semiconductor Laser Device
patent-application, September 2009


Light-Emitting Diode Structure with Electrostatic Discharge Protection
patent-application, August 2005


The Ammonothermal Crystal Growth of Gallium Nitride—A Technique on the Up Rise
journal, July 2010


Metal Nitrides and Process for Production Thereof
patent-application, August 2008


Deep centers in semi-insulating Fe-doped native GaN substrates grown by hydride vapour phase epitaxy
journal, May 2008


Method for Fabrication of Semipolar (Al, In, Ga, B)N Based Light Emitting Diodes
patent-application, October 2009


Semi-insulating GaN and method of making the same
patent, January 2007


Method for making Group III nitride devices and devices produced thereby
patent, April 2006


Synthesis and Luminescence Properties of Intensely Red-Emitting M5Eu ( WO4 ) 4 − x ( MoO4 ) x  ( M = Li ,  Na ,  K )  Phosphors
journal, January 2008


Ammonothermal growth of GaN crystals in alkaline solutions
journal, January 2006


Substrate for the epitaxial growth of gallium nitride
patent, October 2012


Demonstration of Nonpolar m -Plane InGaN/GaN Laser Diodes
journal, February 2007


Process for Large-Scale Ammonothermal Manufacturing of Semipolar Gallium Nitride Boules
patent-application, December 2013


Group III nitride compositions
patent, August 2009


Method and apparatus for growing crystals
patent, July 2000


Ammonothermal method for growth of bulk gallium nitride
patent, June 2013


Method for Making Crystalline Composition
patent-application, June 2007


Group III nitride light emitting devices with progressively graded layers
patent-application, September 2003


Method for Reducing Defect Concentration in Crystals
patent-application, May 2006


Method for growth of indium-containing nitride films
patent, July 2013


Dense-Luminescent-Materials-Coated Violet LEDs
patent-application, June 2014


Low oxygen cubic boron nitride and its production
patent, February 2006


Deep red phosphor for general illumination applications
patent, April 2006


Light emitting device with blue light LED and phosphor components
patent, April 2006


Method for forming nitride crystals
patent, January 2010


Gallium nitride crystal and method of making same
patent, August 2006


Homoepitaxial gallium nitride based photodetector and method of producing
patent, November 2007


Illumination Devices Using Externally Interconnected Arrays of Light Emitting Devices, and Methods of Fabricating Same
patent-application, September 2008


Continuous-wave Operation of AlGaN-cladding-free Nonpolar m -Plane InGaN/GaN Laser Diodes
journal, April 2007


Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation
journal, November 2005


Large-Area Bulk Gallium Nitride Wafer and Method of Manufacture
patent-application, July 2010


High pressure high temperature growth of crystalline group III metal nitrides
patent, June 2006


Bulk single crystal gallium nitride and method of making same
patent, July 2004


Gallium Nitride Crystals and Wafers and Method of Making
patent-application, May 2005


Device provided with a dedicated dye compound
patent-application, February 2006


Semiconductor laser device and method of fabricating the same
patent-application, November 2007


Surfactants in epitaxial growth
journal, August 1989


Sintered polycrystalline gallium nitride and its production
patent, March 2005


White LED phosphors: the next step
conference, February 2010


Basket Process and Apparatus for Crystalline Gallium-Containing Nitride
patent-application, February 2010


Apparatus for growing homogeneous crystals
patent, March 1992


High pressure/high temperature apparatus with improved temperature control for crystal growth
patent, September 2006


Substrate Processing Apparatus and Related Systems and Methods
patent-application, December 2003


Semiconductor Layer Structure with Superlattice
patent-application, January 2008


Nitride semiconductor light-emitting device and optical device including the same
patent, February 2005


Homoepitaxial gallium-nitride-based electronic devices and method for producing same
patent-application, July 2004


Semiconductor composite apparatus, print head, and image forming apparatus
patent-application, September 2006


Bulk GaN Ion Cleaving
journal, February 2010


Semiconductor laser device and method of manufacturing the same
patent-application, August 2002


Low Sulfur Coal Additive for Improved Furnace Operation
patent-application, February 2003


GaN-based devices using thick (Ga, Al, In)N base layers
patent, March 2003


Process and apparatus for the growth of nitride materials
patent, June 2002


New red Y0.85Bi0.1Eu0.05V1−yMyO4 (M=Nb, P) phosphors for light-emitting diodes
journal, June 2008


Pure Blue Laser Diodes Based on Nonpolar m -Plane Gallium Nitride with InGaN Waveguiding Layers
journal, September 2007


Photovoltaic Power Converter
patent-application, May 2011


High temperature high pressure capsule for processing materials in supercritical fluids
patent, December 2009


Method for Growth of Semipolar (Al, In, Ga, B)N Optoelectronic Devices
patent-application, November 2007


AC/DC Light Emitting Diodes with Integrated Protection Mechanism
patent-application, April 2008


Method of hydrothermally growing quartz
patent, June 1977


Semiconductor Array Tester
patent-application, June 2005


Systems and Methods for Producing White-Light Light Emitting Diodes
patent-application, October 2007


Textured-Surface Light Emitting Diode and Method of Manufacture
patent-application, November 2010


Low temperature method of preparing GaN single crystals
patent, February 1999


Gallium nitride crystals and wafers and method of making
patent, July 2006


Apparatus for Processing Materials in Supercritical Fluids and Methods Thereof
patent-application, August 2006


Near Defect Free GaN Substrates
journal, January 1999


Process for the continuous production of aligned carbon nanotubes
patent, January 2007


System and method for producing solar grade silicon
patent, August 2009


Method of making group III-V nitride-based semiconductor crystal
patent-application, October 2006


High Pressure Apparatuses with Stackable Rings
patent-application, June 2012


Heater, apparatus, and associated method
patent, April 2010


Method for Reducing Defect Concentrations in Crystals
patent-application, January 2004


Multi-Junction Solar Cell Devices
patent-application, January 2011


Process for Obtaining of Bulk Monocrystalline Gallium-Containing Nitride
patent-application, February 2006


Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness
journal, January 2007


Semiconductor Light-Emitting Devices
patent-application, March 2008


Semiconductor Apparatus, Print Head, and Image Forming Apparatus
patent-application, November 2006


High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers
journal, November 2009


Recent results and latest views on microcavity LEDs
conference, June 2004


Light Emitting Element and Manufacturing Method Thereof
patent-application, November 2011


Nitride-Based Semiconductor Device and Method for Fabricating the Same
patent-application, November 2008


Process for the synthesis of diamond
patent, October 2000


Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
patent, May 2007


High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m -plane Bulk GaN Substrate
journal, October 2007


Method of fabrication of highly resistive GaN bulk crystals
patent, August 2001


Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
journal, April 2010


Method for Conductivity Control of (Al, In, Ga, B)N
patent-application, August 2007


AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes
March 2007


High Pressure High Temperature Growth of Crystalline Group III Metal Nitrides
patent-application, October 2003


Zinc Oxide Single Crystal
patent-application, June 2006


Ammonothermal Process for Bulk Synthesis and Growth of Cubic GaN
patent-application, November 2003


Process for obtaining of bulk monocrystalline gallium-containing nitride
patent, April 2008


Bulk GaN crystal growth by the high-pressure ammonothermal method
journal, March 2007


AMMONO method of BN, AlN and GaN synthesis and crystal growth.
journal, January 1998


Nitride Crystal with Removable Surface Layer and Methods of Manufacture
patent-application, July 2012


Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes
journal, January 2008


Nitride Single Crystal Seeded Growth in Supercritical Ammonia with Alkali Metal Ion
patent-application, July 2008


AC Light Emitting Diode
patent-application, May 2010


III-V nitride substrate boule and method of making and using the same
patent, July 2003


Light emitting diode having vertical topology and method of making the same
patent-application, January 2008


Large Area Nitride Crystal and Method for Making It
patent-application, May 2013


Photonic crystal light emitting device
patent, March 2006


Bulk nitride mono-crystal including substrate for epitaxy
patent, September 2008


Organic pigment fine-particle, and method of producing the same
patent-application, May 2005


Apparatus for Producing Single Crystal and Quasi-Single Crystal, and Associated Method
patent-application, March 2006


Method for producing a semiconductor component
patent-application, November 2006


Luminescence in Eu2+-doped Ba2Si5N8: fluorescence, thermoluminescence, and upconversion
journal, December 2000


High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
journal, June 2007


Method for Synthesis of High Quality Large Area Bulk Gallium Based Crystals
patent-application, October 2011


High Voltage Device and Method for Optical Devices
patent-application, January 2012


LED with series-connected monolithically integrated mesas
patent, October 2007


III-N compound semiconductor device
patent, September 2002


GaN based HEMTs with buried field plates
patent-application, June 2008


Crystal Chemistry and Luminescence of Ce3+-Doped Lu2CaMg2(Si,Ge)3O12 and Its Use in LED Based Lighting
journal, July 2006


Bulk monocrystalline gallium nitride
patent, December 2003


Large-Area Seed for Ammonothermal Growth of Bulk Gallium Nitride and Method of Manufacture
patent-application, March 2010


500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells
journal, June 2009


Microcavity light emitting diode method of manufacture
patent, January 2013


GaN system compound semiconductor and method for growing crystal thereof
patent-application, July 2001


Low-friction cell for piston-cylinder high-pressure apparatus
journal, April 1975


Micro-LED based high voltage AC/DC indicator lamp
patent-application, August 2006


Apparatus for Making Crystalline Composition
patent-application, July 2007


Light Emitting Diodes with Low Refractive Index Material Layers to Reduce Light Guiding Effects
patent-application, September 2013


Excellent crystallinity of truly bulk ammonothermal GaN
journal, August 2008


Gallum Nitride Crystals and Wafers and Method of Making
patent-application, July 2007


Stimulated emission at 474nm from an InGaN laser diode structure grown on a (112¯2) GaN substrate
journal, December 2007


Crystals for a semiconductor radiation detector and method for making the crystals
patent, January 2008


Nitride semiconductor laser chip and fabrication method thereof
patent-application, December 2008


Alternating current light-emitting device and fabrication method thereof
patent-application, May 2008


High Pressure Apparatus and Method for Nitride Crystal Growth
patent-application, July 2011


Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
patent, April 2007


Ca1−xMo1−ySiyO4:Eux3+: A novel red phosphor for white light emitting diodes
journal, March 2008


Method of Making Bulk InGaN Substrates and Devices Thereon
patent-application, April 2012


Manufacturing methods for semiconductor devices with multiple III-V material layers
patent, October 2005


Oxidized low density lipoprotein sensing device for gallium nitride process
patent, July 2010


Nitride semiconductor device
patent-application, June 2005


The effect of replacement of Sr by Ca on the structural and luminescence properties of the red-emitting Sr2Si5N8:Eu2+ LED conversion phosphor
journal, March 2008


Polycrystalline Group III Metal Nitride with Getter and Method of Making
patent-application, September 2013


Semiconductor laser diode
patent-application, November 2008


Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
patent-application, September 2006


Large Area Nitride Crystal and Method for Making It
patent-application, January 2012


Prospects for the ammonothermal growth of large GaN crystal
journal, July 2007


Hexagonal Wurtzite Type Single Crystal, Process for Producing the Same, and Hexagonal Wurtzite Type Single Crystal Substrate
patent-application, March 2008


High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate
journal, July 2007


Method for reducing defect concentrations in crystals
patent, February 2007


Selective Area Epitaxy Growth Method and Structure for Multi-Colored Devices
patent-application, December 2009


Apparatus for the Evaporation of Aqueous Organic Liquids and the Production of Powder Pre-Forms in Flame Hydrolysis Processes
patent-application, September 2005


Semiconductor device and a method of making the same
patent-application, December 2005


Crystal Production Process Using Supercritical Solvent, Crystal Growth Apparatus, Crystal and Device
patent-application, April 2009


Blue Laser Diodes Fabricated on m -Plane GaN Substrates
journal, January 2008


Light emitting device and method for making same
patent, September 2006


High temperature high pressure capsule for processing materials in supercritical fluids
patent, October 2006


High Pressure Apparatus and Method for Nitride Crystal Growth
patent-application, May 2012


Highly efficient all-nitride phosphor-converted white light emitting diode
journal, July 2005


Resonant cavity light emitting devices and associated method
patent-application, June 2016


Highly efficient gallium nitride based light emitting diodes via surface roughening
patent-application, May 2007


AlxInyGa1−x−yN mixture crystal substrate
patent, September 2006


Surfactant mediated epitaxial growth of InxGa1−xAs on GaAs (001)
journal, July 1992


Gallium-nitride based light emitting diode structure with enhanced light illuminance
patent-application, February 2006


Apparatus for Growing Crystals
patent, April 1966


Light Emitting Device with Phosphor Wavelength Conversion
patent-application, October 2009


Pattern Diamond Growth on Diamond Crystals
patent, February 1967


Reaction vessel
patent, February 1984


Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
patent, July 2011


Optimization of Laser Bar Orientation for Nonpolar and Semipolar (Ga, Al, In, B)N Diode Lasers
patent-application, August 2008


Saw Filter Manufactured by Using GAN Single Crystal Thin Film and Manufacturing Method Thereof
patent-application, August 2001


Group III Nitride Semiconductor Device, Epitaxial Substrate, and Method of Fabricating Group III Nitride Semiconductor Device
patent-application, September 2011


Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
journal, May 2009


Nitride semiconductor light emitting device
patent, February 2004


Single Crystal and Quasi-Single Crystal, Composition, Apparatus, and Associated Method
patent-application, February 2006


White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Phosphors
patent-application, February 2010


Pressure Vessel
patent-application, July 2003


Method for Producing Nitride Semiconductor, Crystal Growth Rate Increasing Agent, Single Crystal Nitride, Wafer and Device
patent-application, April 2010


Homoepitaxial gallium-nitride-based light emitting device and method for producing
patent, May 2006


Apparatus for processing materials in supercritical fluids and methods thereof
patent, April 2010


Loop Antenna Input Circuit for AM and AM Radio Receiver Using the Same
patent-application, January 2010


Large-area bulk gallium nitride wafer and method of manufacture
patent, November 2011


Process for Large-Scale Ammonothermal Manufacturing of Gallium Nitride Boules
patent-application, February 2010


Light Emitting Diode
patent-application, September 2008


High Resistivity GaN Single Crystalline Substrates
journal, November 1997


Preparation and luminescence properties of LED conversion novel phosphors SrZnO2:Sm
journal, March 2008


Dynamic compressive strength of silicon carbide under uniaxial compression
journal, October 2001


Nitride Semiconductor Component and Process for Its Production
patent-application, August 2007


Semiconductor Device
patent-application, March 2007


Wavelength Converted Semiconductor Light Emitting Device
patent-application, May 2011


Ammonothermal growth of bulk GaN
journal, August 2008


Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
journal, January 1999


Process for Producing Semiconductor Light-Emitting Device
patent-application, April 2007


Method of making Group III nitrides
patent, June 2008


Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate
journal, January 2007


High Pressure Apparatus and Method for Nitride Crystal Growwth
patent-application, December 2009


Capsule for High Pressure Processing and Method of Use for Supercritical Fluids
patent-application, December 2009


Plane Dependent Growth of GaN in Supercritical Basic Ammonia
journal, December 2008


Method and Apparatus for Manufacturing Group III Nitride Crystals
patent-application, September 2007


Flip-chip light emitting diode
patent, October 2006


Optical excitation/detection device and method for making same using fluidic self-assembly techniques
patent-application, November 2004


Group III-Nitride Based Resonant Cavity Light Emitting Devices Fabricated on Single Crystal Gallium Nitride Substrates
patent-application, April 2005


LED Arrangement
patent-application, July 2007


GaN Single Crystal Substrate and Method of Making the Same
patent-application, May 2007


System and High Pressure, High Temperature Apparatus for Producing Synthetic Diamonds
patent-application, December 2006


Light-Emitting Crystal Structures
patent-application, January 2008


Molding system with integrated film heaters and sensors
patent, July 2004


Crystals for a Semiconductor Radiation Detector and Method for Making the Crystals
patent-application, August 2007


Method for Improved Growth of Semipolar (Al,In,Ga,B)N
patent-application, September 2007


Crystal growth of gallium nitride in supercritical ammonia
journal, January 2001


Optical waveguide, area light source device and liquid crystal display device
patent-application, August 2004


Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals
journal, September 2001


Series Connected Flip Chip LEDs with Growth Substrate Removed
patent-application, May 2010


Gallium-Nitride-on-Handle Substrate Materials and Devices and Method of Manufacture
patent-application, July 2012


Semi-Insulating Group III Metal Nitride and Method of Manufacture
patent-application, September 2011


Surface Heating Element and Method for Producing a Surface Heating Element
patent-application, September 2007


Luminescent Properties of Cerium-Activated Garnet Series Phosphor: Structure and Temperature Effects
journal, January 2008


Etchant, method of etching, laminate formed thereby, and device
patent-application, December 2006


Temperature control method and apparatus
patent, January 1978


Current isolating epitaxial buffer layers for high voltage photodiode array
patent-application, June 2002


Crystals for a Semiconductor Radiation Detector and Method for Making the Crystals
patent-application, September 2006


Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs
journal, May 2007


III-Phospide and III-Arsenide flip chip light-emitting devices
patent, August 2004


Method for Growth of Indium-Containing Nitride Films
patent-application, August 2012


Crystalline Composition, Wafer, and Semi-Conductor Structure
patent-application, January 2008


Micro-Emitter Array Based Full-Color Micro-Display
patent-application, March 2009


Ammonothermal Synthesis of III-Nitride Crystals
journal, June 2006


Method for Forming Nitride Crystals
patent-application, April 2008


Nitride Crystal with Removable Surface Layer and Methods of Manufacture
patent-application, September 2010


Crystalline Composition, Device, and Associated Method
patent-application, June 2007


Ammonothermal Method for Growth of Bulk Gallium Nitride
patent-application, October 2011


Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
patent, January 2007


Semiconductor Substrate and Semiconductor Device
patent-application, December 2001


Robust transistors with fluorine treatment
patent-application, May 2007


High Pressure Apparatus and Method for Nitride Crystal Growth
patent-application, June 2010


Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates
May 2007


Selective oxidation of AlInN layers for current confinement in III–nitride devices
journal, August 2005


Process for Obtaining Bulk Mono-Crystalline Gallium-Containing Nitride
patent-application, February 2006


High Pressure Apparatus and Method for Nitride Crystal Growth
patent-application, December 2009


Apparatus for producing single crystal and quasi-single crystal, and associated method
patent, May 2008


Light-based system for detecting analytes
patent, September 2006


Synthesis of dense polycrystalline GaN of high purity by the chemical vapor reaction process
journal, January 2006


Heater, Apparatus, and Associated Method
patent-application, April 2008


Structure of the Cl-passivated GaAs(111) surface
journal, November 1998


Homoepitaxial gallium nitride based photodetector and method of producing
patent, October 2004


Light Emitting Module with Optically-Transparent Thermally-Conductive Element
patent-application, January 2011


Solid State Light Source Fabricated with YAG:Ce Single Crystal
journal, August 2002


Red phosphor for LED based lighting
patent, February 2008


Copacking Configurations for Nonpolar GaN and/or Semipolar GaN LEDs
patent-application, January 2010


2.5λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process
journal, August 2007


Large Area, Low-Defect Gallium-Containing Nitride Crystals, Method of Making and Method of Use
patent-application, March 2014


High pressure apparatus with stackable rings
patent, May 2013


Apparatus for and method of handling crystals from crystal-growing furnaces
patent, September 1982


Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
journal, June 2008


Surface impurity-enriched diamond and method of making
patent, May 2005


Lateral growth method for defect reduction of semipolar nitride films
patent-application, January 2007


Polycrystalline Group III Metal Nitride with Getter and Method of Making
patent-application, June 2010


Apparatus for obtaining a bulk single crystal using supercritical ammonia
patent, February 2008


Semiconductor devices and methods of manufacture
patent-application, May 2007


Crystals for a Semiconductor Radiation Detector and Method for Making the Crystals
patent-application, August 2007


Current isolating epitaxial buffer layers for high voltage photodiode array
patent-application, December 2002


High-pressure synthesis of high-purity diamond crystal
journal, November 1996


Cubic (Zinc-Blende) Aluminum Nitride and Method of Making Same
patent-application, August 2003


Method and materials for growing III-nitride semiconductor compounds containing aluminum
patent-application, April 2008


Process For Manufacturing A Gallium Rich Gallium Nitride Film
patent-application, November 2008


High pressure growth of bulk GaN from solutions in gallium
journal, July 2001


Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
journal, August 2005


Heater Device and Method for High Pressure Processing of Crystalline Materials
patent-application, December 2009