Title: Local checkpointing using a multi-level cell

Abstract

Local checkpointing using a multi-level call is described herein. An example method includes storing a first datum in a first level of a multi-level cell. A second datum is stored in a second level of the multi-level cell, the second datum representing a checkpoint of the first datum. The first datum is copied from the first level to the second level of the multi-level cell to create the checkpoint.

Inventors:

Yoon, Doe Hyun; Schreiber, Robert; Faraboschi, Paolo; Chang, Jichuan; Muralimanohar, Naveen; Ranganathan, Parthasarathy

Issue Date:

2018-07-17

Research Org.:

Hewlett Packard Enterprise Development LP, Houston, TX (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1464613

Patent Number(s):

10025663

Application Number:

14/374,817

Assignee:

Hewlett Packard Enterprise Development LP (Houston, TX)

Patent Classifications (CPCs):

G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

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G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING

G06F11/08 - Error detection or correction by redundancy in data representation, e.g. by using checking codes

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

G11C2029/4402 - {Internal storage of test result, quality data, chip identification, repair information}

G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING

G06F2212/7209 - Validity control, e.g. using flags, time stamps or sequence numbers

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

G11C29/44 - Indication or identification of errors, e.g. for repair
G11C11/5685 - {using storage elements comprising metal oxide memory material, e.g. perovskites}

G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING

G06F12/0246 - {in block erasable memory, e.g. flash memory}

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

G11C13/0059 - {Security or protection circuits or methods}

G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING

G06F2212/1016 - Performance improvement
G06F12/0238 - {Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory}
G06F2212/7207 - management of metadata or control data
G06F11/1072 - {in multilevel memories}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02D - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THIR OWN ENERGY USE

Y02D10/00 - Energy efficient computing

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

G11C2211/5641 - Multilevel memory having cells with different number of storage levels
G11C2013/0076 - {Write operation performed depending on read result}

G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING

G06F11/141 - {for bus or memory accesses}

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

G11C11/56 - using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency

G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING

G06F2212/1028 - Power efficiency
G06F11/1407 - {Checkpointing the instruction stream}

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

G11C11/5678 - {using amorphous/crystalline phase transition storage elements}

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DOE Contract Number:  

SC0005026

Resource Type:

Patent

Resource Relation:

Patent File Date: 2012 Apr 27

Country of Publication:

United States

Language:

English