Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber

Gershon, Talia S.; Guha, Supratik; Gunawan, Oki; Haight, Richard A.; Lee, Yun Seog

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Title: Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber

Abstract

Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

Inventors:: Gershon, Talia S.; Guha, Supratik; Gunawan, Oki; Haight, Richard A.; Lee, Yun Seog

Issue Date:: 2018-07-24

Research Org.:: International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1464125

Patent Number(s):: 10032949

Application Number:: 14/936,131

Assignee:: International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02557 - {Sulfides}
H01L21/0256 - {Selenides}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02579 - {P-type}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/0327 - {characterised by the doping material}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/07 - the potential barriers being only of the Schottky type
H01L31/072 - the potential barriers being only of the PN heterojunction type

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

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DOE Contract Number:: EE0006334

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Nov 09

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 15 GEOTHERMAL ENERGY

Citation Formats


                    Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber.  United States: N. p., 2018. 
        Web.

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                    Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., & Lee, Yun Seog. Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber.  United States.

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                    Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Tue .  
        "Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber".  United States.  https://www.osti.gov/servlets/purl/1464125.

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@article{osti_1464125,

  title        = {Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber},

  author       = {Gershon, Talia S. and Guha, Supratik and Gunawan, Oki and Haight, Richard A. and Lee, Yun Seog},

  abstractNote = {Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {7}

}

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Title: Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber

Abstract

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