Title: Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber

Abstract

Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

Inventors:

Gershon, Talia S.; Guha, Supratik; Gunawan, Oki; Haight, Richard A.; Lee, Yun Seog

Issue Date:

2018-07-24

Research Org.:

International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1464125

Patent Number(s):

10032949

Application Number:

14/936,131

Assignee:

International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/0327 - {characterised by the doping material}
H01L31/072 - the potential barriers being only of the PN heterojunction type

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02579 - {P-type}
H01L21/02557 - {Sulfides}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L31/07 - the potential barriers being only of the Schottky type
H01L21/0256 - {Selenides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

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DOE Contract Number:  

EE0006334

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Nov 09

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 15 GEOTHERMAL ENERGY