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  • Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber

Title: Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber

Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.
Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
1464125
Assignee:
International Business Machines Corporation (Armonk, NY) DOEEE
Patent Number(s):
10,032,949
Application Number:
14/936,131
Contract Number:
EE0006334
Resource Relation:
Patent File Date: 2015 Nov 09
Research Org:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 15 GEOTHERMAL ENERGY

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