Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber
Abstract
Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.
- Inventors:
- Issue Date:
- Research Org.:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1464125
- Patent Number(s):
- 10032949
- Application Number:
- 14/936,131
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EE0006334
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Nov 09
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 15 GEOTHERMAL ENERGY
Citation Formats
Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber. United States: N. p., 2018.
Web.
Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., & Lee, Yun Seog. Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber. United States.
Gershon, Talia S., Guha, Supratik, Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Tue .
"Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber". United States. https://www.osti.gov/servlets/purl/1464125.
@article{osti_1464125,
title = {Photovoltaic device based on Ag.sub.2ZnSn(S,Se).sub.4 absorber},
author = {Gershon, Talia S. and Guha, Supratik and Gunawan, Oki and Haight, Richard A. and Lee, Yun Seog},
abstractNote = {Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {7}
}
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