Title: Monolithically integrated infrared transceiver

Abstract

A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.

Inventors:

Wanke, Michael; Nordquist, Christopher; Lee, Mark

Issue Date:

Tue Jul 10 00:00:00 EDT 2018

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1462197

Patent Number(s):

10020634

Application Number:

14/575,430

Assignee:

National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/20 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L29/872 - Schottky diodes
H01L31/022408 - {for devices characterised by at least one potential jump barrier or surface barrier}
H01L31/0735 - comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L31/125 - {Composite devices with photosensitive elements and electroluminescent elements within one single body}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S2301/17 - Semiconductor lasers comprising special layers
H01S2301/176 - Specific passivation layers on surfaces other than the emission facet
H01S5/0261 - {Non-optical elements, e.g. laser driver components, heaters
H01S5/0604 - {comprising a non-linear region, e.g. generating harmonics of the laser frequency}
H01S5/2054 - {Methods of obtaining the confinement}
H01S5/22 - having a ridge or stripe structure
H01S5/3211 - {characterised by special cladding layers, e.g. details on band-discontinuities}
H01S5/3401 - {having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers}
H01S5/343 - in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}
H01S5/4025 - {Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/544 - Solar cells from Group III-V materials

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Dec 18

Country of Publication:

United States

Language:

English

Subject:

47 OTHER INSTRUMENTATION