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Title: Monolithically integrated infrared transceiver

Abstract

A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1462197
Patent Number(s):
10020634
Application Number:
14/575,430
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Dec 18
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Wanke, Michael, Nordquist, Christopher, and Lee, Mark. Monolithically integrated infrared transceiver. United States: N. p., 2018. Web.
Wanke, Michael, Nordquist, Christopher, & Lee, Mark. Monolithically integrated infrared transceiver. United States.
Wanke, Michael, Nordquist, Christopher, and Lee, Mark. Tue . "Monolithically integrated infrared transceiver". United States. https://www.osti.gov/servlets/purl/1462197.
@article{osti_1462197,
title = {Monolithically integrated infrared transceiver},
author = {Wanke, Michael and Nordquist, Christopher and Lee, Mark},
abstractNote = {A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {7}
}

Works referenced in this record:

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journal, January 1978


A W–InSb point contact diode for harmonic generation and mixing in the visible
journal, February 2000


Quantum cascade laser
patent, April 2000


Frequency measurement chain to 30 THz using FIR schottky diodes and a submillimeter backward wave oscillator
journal, June 1984


GaAs Schottky diodes for THz mixing applications
journal, January 1992


Terahertz semiconductor-heterostructure laser
journal, May 2002


Terahertz semiconductor-heterostructure lasers
conference, January 2002


Integrated heterodyne terahertz transceiver
patent, June 2009


Integrated heterodyne terahertz transceiver
patent, September 2012


Experimental investigation of Schottky barrier diodes as nonlinear elements in 800-nm-wavelength region
journal, July 2004


Video detection and mixing performance of GaAs Schottky‐barrier diodes at 30 THz and comparison with metal‐insulator‐metal diodes
journal, April 1994


Monolithically integrated solid-state terahertz transceivers
journal, June 2010