Chalcogen back surface field layer
Abstract
Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.
- Inventors:
- Issue Date:
- Research Org.:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1461496
- Patent Number(s):
- 10014423
- Application Number:
- 15/281,789
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EE0006334
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Sep 30
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Antunez, Priscilla D., Ek, Bruce A., Haight, Richard A., Mankad, Ravin, Singh, Saurabh, and Todorov, Teodor K. Chalcogen back surface field layer. United States: N. p., 2018.
Web.
Antunez, Priscilla D., Ek, Bruce A., Haight, Richard A., Mankad, Ravin, Singh, Saurabh, & Todorov, Teodor K. Chalcogen back surface field layer. United States.
Antunez, Priscilla D., Ek, Bruce A., Haight, Richard A., Mankad, Ravin, Singh, Saurabh, and Todorov, Teodor K. Tue .
"Chalcogen back surface field layer". United States. https://www.osti.gov/servlets/purl/1461496.
@article{osti_1461496,
title = {Chalcogen back surface field layer},
author = {Antunez, Priscilla D. and Ek, Bruce A. and Haight, Richard A. and Mankad, Ravin and Singh, Saurabh and Todorov, Teodor K.},
abstractNote = {Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {7}
}
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