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Title: Chalcogen back surface field layer

Abstract

Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1461496
Patent Number(s):
10014423
Application Number:
15/281,789
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Sep 30
Country of Publication:
United States
Language:
English

Citation Formats

Antunez, Priscilla D., Ek, Bruce A., Haight, Richard A., Mankad, Ravin, Singh, Saurabh, and Todorov, Teodor K. Chalcogen back surface field layer. United States: N. p., 2018. Web.
Antunez, Priscilla D., Ek, Bruce A., Haight, Richard A., Mankad, Ravin, Singh, Saurabh, & Todorov, Teodor K. Chalcogen back surface field layer. United States.
Antunez, Priscilla D., Ek, Bruce A., Haight, Richard A., Mankad, Ravin, Singh, Saurabh, and Todorov, Teodor K. Tue . "Chalcogen back surface field layer". United States. https://www.osti.gov/servlets/purl/1461496.
@article{osti_1461496,
title = {Chalcogen back surface field layer},
author = {Antunez, Priscilla D. and Ek, Bruce A. and Haight, Richard A. and Mankad, Ravin and Singh, Saurabh and Todorov, Teodor K.},
abstractNote = {Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {7}
}

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Works referenced in this record:

Prospects and performance limitations for Cu-Zn-Sn-S-Se photovoltaic technology
journal, July 2013

  • Mitzi, D. B.; Gunawan, O.; Todorov, T. K.
  • Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 371, Issue 1996, Article No. 20110432
  • https://doi.org/10.1098/rsta.2011.0432

Back surface band gap gradings in Cu(In,Ga)Se2 solar cells
journal, May 2001