Chalcogen back surface field layer

Title: Chalcogen back surface field layer

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Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

Inventors:: Antunez, Priscilla D.; Ek, Bruce A.; Haight, Richard A.; Mankad, Ravin; Singh, Saurabh; Todorov, Teodor K.

Issue Date:: 2018-07-03

OSTI Identifier:: 1461496

Assignee:: International Business Machines Corporation (Armonk, NY) DOEEE

Patent Number(s):: 10,014,423

Application Number:: 15/281,789

Contract Number:: EE0006334

Resource Relation:: Patent File Date: 2016 Sep 30

Research Org:: International Business Machines Corporation, Armonk, NY (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

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