Electron spin-based information shuttling for a computer system
Abstract
A silicon metal-oxide semiconductor device transports a spin-polarized single electron. An array of silicon quantum dot electrodes is arranged atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The array comprises at least a first electrode and a second electrode adjacent to the first electrode. A transport control logic for individually controls a voltage applied to the electrodes. The transport control logic is configured to gradually decrease a voltage at the first electrode while gradually increasing a voltage at the second electrode. Localization of the single electron is adiabatically transferred from the first electrode to the second electrode while maintaining a desired energy gap between a ground state and a first excited state of the single electron.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1459000
- Patent Number(s):
- 10002328
- Application Number:
- 15/381,819
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G06 - COMPUTING G06N - COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Dec 16
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Gamble, IV, John King, and Carroll, Malcolm S. Electron spin-based information shuttling for a computer system. United States: N. p., 2018.
Web.
Gamble, IV, John King, & Carroll, Malcolm S. Electron spin-based information shuttling for a computer system. United States.
Gamble, IV, John King, and Carroll, Malcolm S. Tue .
"Electron spin-based information shuttling for a computer system". United States. https://www.osti.gov/servlets/purl/1459000.
@article{osti_1459000,
title = {Electron spin-based information shuttling for a computer system},
author = {Gamble, IV, John King and Carroll, Malcolm S.},
abstractNote = {A silicon metal-oxide semiconductor device transports a spin-polarized single electron. An array of silicon quantum dot electrodes is arranged atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The array comprises at least a first electrode and a second electrode adjacent to the first electrode. A transport control logic for individually controls a voltage applied to the electrodes. The transport control logic is configured to gradually decrease a voltage at the first electrode while gradually increasing a voltage at the second electrode. Localization of the single electron is adiabatically transferred from the first electrode to the second electrode while maintaining a desired energy gap between a ground state and a first excited state of the single electron.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {6}
}
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