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Title: Passivated contact formation using ion implantation

Abstract

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Inventors:
; ;
Issue Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1452920
Patent Number(s):
9985159
Application Number:
15/349,630
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Nov 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Young, David L., Stradins, Pauls, and Nemeth, William. Passivated contact formation using ion implantation. United States: N. p., 2018. Web.
Young, David L., Stradins, Pauls, & Nemeth, William. Passivated contact formation using ion implantation. United States.
Young, David L., Stradins, Pauls, and Nemeth, William. Tue . "Passivated contact formation using ion implantation". United States. https://www.osti.gov/servlets/purl/1452920.
@article{osti_1452920,
title = {Passivated contact formation using ion implantation},
author = {Young, David L. and Stradins, Pauls and Nemeth, William},
abstractNote = {Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}

Works referenced in this record:

Methods of Emitter Formation in Solar Cells
patent-application, March 2009


Negatively Charged Passivation Layer in a Photovoltaic Cell
patent-application, August 2010


Low Cost SOI Substrates for Monolithic Solar Cells
patent-application, September 2010


Semiconductor Device and Method for Manufacturing the Same
patent-application, September 2010


Solar Cell Fabricated by Simplified Deposition Process
patent-application, March 2016


Spacer Formation in a Solar Cell Using Oxygen Ion Implantation
patent-application, April 2014


Solar Cell Having Doped Semiconductor Heterojunction Contacts
patent-application, November 2007


System Comprising a Semiconductor Device and Structure
patent-application, May 2012


PFET Polysilicon Layer with N-Type End Cap for Electrical Shunt
patent-application, April 2014


Nanoporous silicon bioreactor
patent-application, June 2002


Thin Silicon Solar Cell And Method Of Manufacture
patent-application, October 2012


Solar Cell and Method of Manufacturing the Same
patent-application, May 2015


Solar Cell
patent-application, August 2015