Passivated contact formation using ion implantation
Abstract
Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1452920
- Patent Number(s):
- 9985159
- Application Number:
- 15/349,630
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Nov 11
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING
Citation Formats
Young, David L., Stradins, Pauls, and Nemeth, William. Passivated contact formation using ion implantation. United States: N. p., 2018.
Web.
Young, David L., Stradins, Pauls, & Nemeth, William. Passivated contact formation using ion implantation. United States.
Young, David L., Stradins, Pauls, and Nemeth, William. Tue .
"Passivated contact formation using ion implantation". United States. https://www.osti.gov/servlets/purl/1452920.
@article{osti_1452920,
title = {Passivated contact formation using ion implantation},
author = {Young, David L. and Stradins, Pauls and Nemeth, William},
abstractNote = {Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}
Works referenced in this record:
Fipos method of forming SOI CMOS structure
patent, December 2001
- Wu, Shye-Lin
- US Patent Document 6,331,456
Methods of Emitter Formation in Solar Cells
patent-application, March 2009
- Borden, Peter
- US Patent Document 12/202213; 20090068783
Processing Method for Forming Dislocation-Free Silicon-on-Insulator Substrate Prepared by Implantation of Oxygen
patent-application, July 2002
- Huang, Feng-Yi
- US Patent Document 09/379058; 20020089032
Negatively Charged Passivation Layer in a Photovoltaic Cell
patent-application, August 2010
- Borden, Peter G.; Olsen, Christopher Sean
- US Patent Document 12/367064; 20100203742
Low Cost SOI Substrates for Monolithic Solar Cells
patent-application, September 2010
- Bedell, Stephen W.; de Souza, Joel P.; Fogel, Keith E.
- US Patent Document 12/436249; 20100221867
Semiconductor Device and Method for Manufacturing the Same
patent-application, September 2010
- Ito, Satoru
- US Patent Document 12/790148; 20100237440
Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate
patent, July 1996
- Racanelli, Marco; Hwang, Bor-Yuan; Foerstner, Juergen A.
- US Patent Document 5,532,175
Solar Cell Fabricated by Simplified Deposition Process
patent-application, March 2016
- Rim, Seung Bum; Moors, Matthieu
- US Patent Document 14/495565; 20160087140
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
journal, January 2014
- Feldmann, Frank; Bivour, Martin; Reichel, Christian
- Solar Energy Materials and Solar Cells, Vol. 120
Spacer Formation in a Solar Cell Using Oxygen Ion Implantation
patent-application, April 2014
- Rim, Seung; Smith, David D.
- US Patent Document 13/631457; 20140090701
Solar Cell Having Doped Semiconductor Heterojunction Contacts
patent-application, November 2007
- Cousins, Peter
- US Patent Application 11/381681; 20070256728
System Comprising a Semiconductor Device and Structure
patent-application, May 2012
- Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian
- US Patent Document 13/273712; 20120129301
PFET Polysilicon Layer with N-Type End Cap for Electrical Shunt
patent-application, April 2014
- Noorlag, Date Jan Willem
- US Patent Document 13/658049; 20140110792
Nanoporous silicon bioreactor
patent-application, June 2002
- Bhatia, Sangeeta N.; Chin, Vicki I.; Sailor, Michael J.
- US Patent Document 09/981691; 20020072116
Thin Silicon Solar Cell And Method Of Manufacture
patent-application, October 2012
- Rim, Seung Bum; Morse, Michael; Kim, Taeseok
- US Patent Document 13/074350; 20120247560
Solar Cell and Method of Manufacturing the Same
patent-application, May 2015
- Yang, Youngsung; Choi, Junghoon; Park, Hyunjung
- US Patent Document 14/555155; 20150144183
Solar Cell
patent-application, August 2015
- Lee, Kyoungsoo; Lee, Seongeun
- US Patent Document 14/700451; 20150236176