Passivated contact formation using ion implantation
Abstract
Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1452920
- Patent Number(s):
- 9985159
- Application Number:
- 15/349,630
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Nov 11
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING
Citation Formats
Young, David L., Stradins, Pauls, and Nemeth, William. Passivated contact formation using ion implantation. United States: N. p., 2018.
Web.
Young, David L., Stradins, Pauls, & Nemeth, William. Passivated contact formation using ion implantation. United States.
Young, David L., Stradins, Pauls, and Nemeth, William. Tue .
"Passivated contact formation using ion implantation". United States. https://www.osti.gov/servlets/purl/1452920.
@article{osti_1452920,
title = {Passivated contact formation using ion implantation},
author = {Young, David L. and Stradins, Pauls and Nemeth, William},
abstractNote = {Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}
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Works referenced in this record:
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
journal, January 2014
- Feldmann, Frank; Bivour, Martin; Reichel, Christian
- Solar Energy Materials and Solar Cells, Vol. 120