Passivated contact formation using ion implantation

Title: Passivated contact formation using ion implantation

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Inventors:: Young, David L.; Stradins, Pauls; Nemeth, William

Issue Date:: 2018-05-29

OSTI Identifier:: 1452920

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO) NREL

Patent Number(s):: 9,985,159

Application Number:: 15/349,630

Contract Number:: AC36-08GO28308

Resource Relation:: Patent File Date: 2016 Nov 11

Research Org:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING

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Other works cited in this record:

Solar Cell Having Doped Semiconductor Heterojunction Contacts
patent-application, November 2007

Cousins, Peter
US Patent Application 11/381681; 20070256728
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220070256728%22.PGNR.&OS=DN/20070256728&RS=DN/20070256728

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