Passivated contact formation using ion implantation

Title: Passivated contact formation using ion implantation

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Inventors:: Young, David L.; Stradins, Pauls; Nemeth, William

Issue Date:: 2018-05-29

OSTI Identifier:: 1452920

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO) NREL

Patent Number(s):: 9,985,159

Application Number:: 15/349,630

Contract Number:: AC36-08GO28308

Resource Relation:: Patent File Date: 2016 Nov 11

Research Org:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING

Full Text
View Full Text

Have feedback or suggestions for a way to improve these results? !

Save / Share this Record no
Export Metadata
- Endnote
- RIS
- Excel
- CSV
- XML
Send to Email

Send to Email

Email address:

Content:

Works referenced in this record:

Solar Cell Having Doped Semiconductor Heterojunction Contacts
patent-application, November 2007

Cousins, Peter
US Patent Application 11/381681; 20070256728
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220070256728%22.PGNR.&OS=DN/20070256728&RS=DN/20070256728

Similar Records

Similar records in DOepatents and OSTI.GOV collections:

Method for ion implantation induced embedded particle formation via reduction

Patent Hampikian, Janet M ; Hunt, Eden M

A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.
Full Text Available January 2001
Process for forming one or more substantially pure layers in substrate material using ion implantation

Patent Musket, Ronald G. ; Brown, David W. ; Munir, Zuhair A.

A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing stepmore »« less
Full Text Available January 1990
Process for forming one or more substantially pure layers in substrate material using ion implantation

Patent Musket, Ronald G. ; Brown, David W. ; Munir, Zuhair A.

A process is disclosed for forming a substantially pure monocrystalline layer of an implantable element in a monocrystalline substrate material by (a) selecting an implantable element and a monocrystalline substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer.more »« less
Full Text Available January 1992
Solar cell contact formation using laser ablation

Patent Harley, Gabriel ; Smith, David ; Cousins, Peter

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.
Full Text Available December 2012
Solar cell contact formation using laser ablation

Patent Harley, Gabriel ; Smith, David D. ; Cousins, Peter John

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline materiat layer; and forming conductive contacts in the plurality of contact holes.
Full Text Available July 2014