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Title: Passivated contact formation using ion implantation

Abstract

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.

Inventors:
; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1452920
Patent Number(s):
9,985,159
Application Number:
15/349,630
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Nov 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Young, David L., Stradins, Pauls, and Nemeth, William. Passivated contact formation using ion implantation. United States: N. p., 2018. Web.
Young, David L., Stradins, Pauls, & Nemeth, William. Passivated contact formation using ion implantation. United States.
Young, David L., Stradins, Pauls, and Nemeth, William. Tue . "Passivated contact formation using ion implantation". United States. https://www.osti.gov/servlets/purl/1452920.
@article{osti_1452920,
title = {Passivated contact formation using ion implantation},
author = {Young, David L. and Stradins, Pauls and Nemeth, William},
abstractNote = {Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}

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