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Title: Passivated contact formation using ion implantation

Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1452920
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO) NREL
Patent Number(s):
9,985,159
Application Number:
15/349,630
Contract Number:
AC36-08GO28308
Resource Relation:
Patent File Date: 2016 Nov 11
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

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