Two-dimensional heterostructure materials
Abstract
Methods, articles of manufacture and systems for creating new nanoscale two dimensional materials comprising designed arrays of lateral or vertical heterojunctions may be fabricated by first lithographically masking a 2D material. Exposed, or unmasked, regions of the 2D material may be converted to a different composition of matter to form lateral or vertical heterojunctions according to the patterned mask. PLD and high kinetic energy impingement of atoms may replace or add atoms in the exposed regions, and a plurality of the exposed regions may be converted concurrently. The process may be repeated one or more times on either side of the same 2D material to form any suitable combination of lateral heterojunctions and/or vertical heterojunctions, comprising semiconductors, metals or insulators or any suitable combination thereof. Furthermore, the resulting 2D material may comprise p-n, n-n, p-p, n-p-n and p-n-p junctions, or any suitable combination thereof.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1440527
- Patent Number(s):
- 9964846
- Application Number:
- 15/215,389
- Assignee:
- UT Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Jul 20
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Geohegan, David B., Rouleau, Christopher M., Wang, Kai, Xiao, Kai, Lin, Ming-Wei, Puretzky, Alexander A., and Mahjouri-Samani, Masoud. Two-dimensional heterostructure materials. United States: N. p., 2018.
Web.
Geohegan, David B., Rouleau, Christopher M., Wang, Kai, Xiao, Kai, Lin, Ming-Wei, Puretzky, Alexander A., & Mahjouri-Samani, Masoud. Two-dimensional heterostructure materials. United States.
Geohegan, David B., Rouleau, Christopher M., Wang, Kai, Xiao, Kai, Lin, Ming-Wei, Puretzky, Alexander A., and Mahjouri-Samani, Masoud. Tue .
"Two-dimensional heterostructure materials". United States. https://www.osti.gov/servlets/purl/1440527.
@article{osti_1440527,
title = {Two-dimensional heterostructure materials},
author = {Geohegan, David B. and Rouleau, Christopher M. and Wang, Kai and Xiao, Kai and Lin, Ming-Wei and Puretzky, Alexander A. and Mahjouri-Samani, Masoud},
abstractNote = {Methods, articles of manufacture and systems for creating new nanoscale two dimensional materials comprising designed arrays of lateral or vertical heterojunctions may be fabricated by first lithographically masking a 2D material. Exposed, or unmasked, regions of the 2D material may be converted to a different composition of matter to form lateral or vertical heterojunctions according to the patterned mask. PLD and high kinetic energy impingement of atoms may replace or add atoms in the exposed regions, and a plurality of the exposed regions may be converted concurrently. The process may be repeated one or more times on either side of the same 2D material to form any suitable combination of lateral heterojunctions and/or vertical heterojunctions, comprising semiconductors, metals or insulators or any suitable combination thereof. Furthermore, the resulting 2D material may comprise p-n, n-n, p-p, n-p-n and p-n-p junctions, or any suitable combination thereof.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}
Works referenced in this record:
Direct and pre-patterned synthesis of two-dimensional heterostructures
patent, May 2017
- Yang, Eui-Hyeok; Kang, Kyung Nam
- US Patent Document 9,640,391
Seed for Metal Dichalcogenide Growth by Chemical Vapor Deposition
patent-application, March 2015
- Dresselhaus, Mildred S.; Kong, Jing; Lee, Yi-Hsien
- US Patent Application 14/469777; 20150064471
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
journal, March 2013
- Butler, Sheneve Z.; Hollen, Shawna M.; Cao, Linyou
- ACS Nano, Vol. 7, Issue 4, p. 2898-2926
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013
- Chhowalla, Manish; Shin, Hyeon Suk; Eda, Goki
- Nature Chemistry, Vol. 5, Issue 4, p. 263-275
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
journal, February 2011
- Coleman, J. N.; Lotya, M.; O'Neill, A.
- Science, Vol. 331, Issue 6017, p. 568-571
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
journal, September 2014
- Duan, Xidong; Wang, Chen; Shaw, Jonathan C.
- Nature Nanotechnology, Vol. 9, Issue 12, p. 1024-1030
Heterojunctions in 2D semiconductors: A perfect match
journal, December 2014
- Duesberg, Georg S.
- Nature Materials, Vol. 13, Issue 12, p. 1075-1076
Vertical and in-plane heterostructures from WS2/MoS2 monolayers
journal, September 2014
- Gong, Yongji; Lin, Junhao; Wang, Xingli
- Nature Materials, Vol. 13, Issue 12, p. 1135-1142
Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
journal, August 2014
- Huang, Chunming; Wu, Sanfeng; Sanchez, Ana M.
- Nature Materials, Vol. 13, Issue 12, p. 1096-1101
Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing
journal, April 2013
- Kang, Jun; Tongay, Sefaattin; Li, Jingbo
- Journal of Applied Physics, Vol. 113, Issue 14, Article No. 143703
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
journal, August 2014
- Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru
- Nature Materials, Vol. 13, Issue 12, p. 1128-1134
Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties
journal, November 2012
- Komsa, Hannu-Pekka; Krasheninnikov, Arkady V.
- The Journal of Physical Chemistry Letters, Vol. 3, Issue 23, p. 3652-3656
Graphene and boron nitride lateral heterostructures for atomically thin circuitry
journal, August 2012
- Levendorf, Mark P.; Kim, Cheol-Joo; Brown, Lola
- Nature, Vol. 488, Issue 7413, p. 627-632
Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2 and WSe2 Nanosheets
journal, February 2014
- Li, Hai; Wu, Jumiati; Yin, Zongyou
- Accounts of Chemical Research, Vol. 47, Issue 4, p. 1067-1075
Growth of Alloy MoS2xSe2(1–x) Nanosheets with Fully Tunable Chemical Compositions and Optical Properties
journal, February 2014
- Li, Honglai; Duan, Xidong; Wu, Xueping
- Journal of the American Chemical Society, Vol. 136, Issue 10, p. 3756-3759
Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition
journal, August 1996
- Lowndes, D. H.; Geohegan, D. B.; Puretzky, A. A.
- Science, Vol. 273, Issue 5277, p. 898-903
Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks
journal, August 2014
- Mahjouri-Samani, Masoud; Gresback, Ryan; Tian, Mengkun
- Advanced Functional Materials, Vol. 24, Issue 40, p. 6365-6371
Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation
journal, October 2014
- Mahjouri-Samani, Masoud; Tian, Mengkun; Wang, Kai
- ACS Nano, Vol. 8, Issue 11, p. 11567-11575
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
journal, June 2013
- Najmaei, Sina; Liu, Zheng; Zhou, Wu
- Nature Materials, Vol. 12, Issue 8, p. 754-759
Pressure-Dependent Optical and Vibrational Properties of Monolayer Molybdenum Disulfide
journal, December 2014
- Nayak, Avinash P.; Pandey, Tribhuwan; Voiry, Damien
- Nano Letters, Vol. 15, Issue 1, p. 346-353
Chemical Vapor Sensing with Monolayer MoS2
journal, January 2013
- Perkins, F. K.; Friedman, A. L.; Cobas, E.
- Nano Letters, Vol. 13, Issue 2, p. 668-673
Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities
journal, July 2014
- Pradhan, Nihar R.; Rhodes, Daniel; Xin, Yan
- ACS Nano, Vol. 8, Issue 8, p. 7923-7929
Controllable Synthesis of Band-Gap-Tunable and Monolayer Transition-Metal Dichalcogenide Alloys
journal, July 2014
- Su, Sheng-Han; Hsu, Wei-Ting; Hsu, Chang-Lung
- Frontiers in Energy Research, Vol. 2, Article No. 27
Electroluminescence in Single Layer MoS2
journal, March 2013
- Sundaram, R. S.; Engel, M.; Lombardo, A.
- Nano Letters, Vol. 13, Issue 4, p. 1416-1421
Monolayer MoS2 Heterojunction Solar Cells
journal, July 2014
- Tsai, Meng-Lin; Su, Sheng-Han; Chang, Jan-Kai
- ACS Nano, Vol. 8, Issue 8, p. 8317-8322
Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2
journal, April 2014
- Wang, Xingli; Gong, Yongji; Shi, Gang
- ACS Nano, Vol. 8, Issue 5, p. 5125-5131
Lattice parameter measurements on molybdenum disulphide
journal, July 1968
- Young, P. A.
- Journal of Physics D: Applied Physics, Vol. 1, Issue 7, p. 936-938
Band Engineering for Novel Two-Dimensional Atomic Layers
journal, December 2014
- Zeng, Qingsheng; Wang, Hong; Fu, Wei
- Small, Vol. 11, Issue 16, p. 1868-1884
High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide
journal, January 2014
- Zheng, Jian; Zhang, Han; Dong, Shaohua
- Nature Communications, Vol. 5, Issue 1, Article No. 2995