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Title: Two-dimensional heterostructure materials

Abstract

Methods, articles of manufacture and systems for creating new nanoscale two dimensional materials comprising designed arrays of lateral or vertical heterojunctions may be fabricated by first lithographically masking a 2D material. Exposed, or unmasked, regions of the 2D material may be converted to a different composition of matter to form lateral or vertical heterojunctions according to the patterned mask. PLD and high kinetic energy impingement of atoms may replace or add atoms in the exposed regions, and a plurality of the exposed regions may be converted concurrently. The process may be repeated one or more times on either side of the same 2D material to form any suitable combination of lateral heterojunctions and/or vertical heterojunctions, comprising semiconductors, metals or insulators or any suitable combination thereof. Furthermore, the resulting 2D material may comprise p-n, n-n, p-p, n-p-n and p-n-p junctions, or any suitable combination thereof.

Inventors:
; ; ; ; ; ;
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1440527
Patent Number(s):
9964846
Application Number:
15/215,389
Assignee:
UT Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jul 20
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Geohegan, David B., Rouleau, Christopher M., Wang, Kai, Xiao, Kai, Lin, Ming-Wei, Puretzky, Alexander A., and Mahjouri-Samani, Masoud. Two-dimensional heterostructure materials. United States: N. p., 2018. Web.
Geohegan, David B., Rouleau, Christopher M., Wang, Kai, Xiao, Kai, Lin, Ming-Wei, Puretzky, Alexander A., & Mahjouri-Samani, Masoud. Two-dimensional heterostructure materials. United States.
Geohegan, David B., Rouleau, Christopher M., Wang, Kai, Xiao, Kai, Lin, Ming-Wei, Puretzky, Alexander A., and Mahjouri-Samani, Masoud. Tue . "Two-dimensional heterostructure materials". United States. https://www.osti.gov/servlets/purl/1440527.
@article{osti_1440527,
title = {Two-dimensional heterostructure materials},
author = {Geohegan, David B. and Rouleau, Christopher M. and Wang, Kai and Xiao, Kai and Lin, Ming-Wei and Puretzky, Alexander A. and Mahjouri-Samani, Masoud},
abstractNote = {Methods, articles of manufacture and systems for creating new nanoscale two dimensional materials comprising designed arrays of lateral or vertical heterojunctions may be fabricated by first lithographically masking a 2D material. Exposed, or unmasked, regions of the 2D material may be converted to a different composition of matter to form lateral or vertical heterojunctions according to the patterned mask. PLD and high kinetic energy impingement of atoms may replace or add atoms in the exposed regions, and a plurality of the exposed regions may be converted concurrently. The process may be repeated one or more times on either side of the same 2D material to form any suitable combination of lateral heterojunctions and/or vertical heterojunctions, comprising semiconductors, metals or insulators or any suitable combination thereof. Furthermore, the resulting 2D material may comprise p-n, n-n, p-p, n-p-n and p-n-p junctions, or any suitable combination thereof.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}

Works referenced in this record:

Seed for Metal Dichalcogenide Growth by Chemical Vapor Deposition
patent-application, March 2015


Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
journal, March 2013


The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013


Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
journal, February 2011


Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
journal, September 2014


Heterojunctions in 2D semiconductors: A perfect match
journal, December 2014


Vertical and in-plane heterostructures from WS2/MoS2 monolayers
journal, September 2014


Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
journal, August 2014


Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing
journal, April 2013


Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
journal, August 2014


Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties
journal, November 2012


Graphene and boron nitride lateral heterostructures for atomically thin circuitry
journal, August 2012


Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2 and WSe2 Nanosheets
journal, February 2014


Growth of Alloy MoS2xSe2(1–x) Nanosheets with Fully Tunable Chemical Compositions and Optical Properties
journal, February 2014


Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition
journal, August 1996


Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks
journal, August 2014


Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation
journal, October 2014


Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
journal, June 2013


Pressure-Dependent Optical and Vibrational Properties of Monolayer Molybdenum Disulfide
journal, December 2014


Chemical Vapor Sensing with Monolayer MoS2
journal, January 2013


Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities
journal, July 2014


Controllable Synthesis of Band-Gap-Tunable and Monolayer Transition-Metal Dichalcogenide Alloys
journal, July 2014


Electroluminescence in Single Layer MoS2
journal, March 2013


Monolayer MoS2 Heterojunction Solar Cells
journal, July 2014


Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2
journal, April 2014


Lattice parameter measurements on molybdenum disulphide
journal, July 1968


Band Engineering for Novel Two-Dimensional Atomic Layers
journal, December 2014


High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide
journal, January 2014