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Title: Optically switched graphene/4H-SiC junction bipolar transistor

Abstract

A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on a first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Univ. of South Carolina, Columbia, SC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1440015
Patent Number(s):
9,966,491
Application Number:
15/049,743
Assignee:
University of South Carolina (Columbia, SC) DOENE
DOE Contract Number:  
12-3834
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Feb 22
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Chandrashekhar, MVS, Sudarshan, Tangali S., Omar, Sabih U., Brown, Gabriel, and Shetu, Shamaita S. Optically switched graphene/4H-SiC junction bipolar transistor. United States: N. p., 2018. Web.
Chandrashekhar, MVS, Sudarshan, Tangali S., Omar, Sabih U., Brown, Gabriel, & Shetu, Shamaita S. Optically switched graphene/4H-SiC junction bipolar transistor. United States.
Chandrashekhar, MVS, Sudarshan, Tangali S., Omar, Sabih U., Brown, Gabriel, and Shetu, Shamaita S. Tue . "Optically switched graphene/4H-SiC junction bipolar transistor". United States. https://www.osti.gov/servlets/purl/1440015.
@article{osti_1440015,
title = {Optically switched graphene/4H-SiC junction bipolar transistor},
author = {Chandrashekhar, MVS and Sudarshan, Tangali S. and Omar, Sabih U. and Brown, Gabriel and Shetu, Shamaita S.},
abstractNote = {A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on a first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}

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Works referenced in this record:

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