Title: Apparatus and methods for memory using in-plane polarization

Abstract

A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.

Inventors:

Liu, Junwei; Chang, Kai; Ji, Shuai-Hua; Chen, Xi; Fu, Liang

Issue Date:

Tue May 01 00:00:00 EDT 2018

Research Org.:

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1438442

Patent Number(s):

9959920

Application Number:

15/453,548

Assignee:

Massachusetts Institute of Technology (Cambridge, MA)

Patent Classifications (CPCs):

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

G11C11/22 - using ferroelectric elements {
G11C11/221 - {using ferroelectric capacitors}
G11C11/2273 - {Reading or sensing circuits or methods}
G11C11/2275 - {Writing or programming circuits or methods}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L28/00 - {Passive two-terminal components without a potential-jump or surface barrier for integrated circuits
H01L28/60 - {Electrodes}

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DOE Contract Number:  

SC0010526

Resource Type:

Patent

Resource Relation:

Patent File Date: 2017 Mar 08

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING