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Title: Apparatus and methods for memory using in-plane polarization

Abstract

A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1438442
Patent Number(s):
9959920
Application Number:
15/453,548
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
Patent Classifications (CPCs):
G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
SC0010526
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Mar 08
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Liu, Junwei, Chang, Kai, Ji, Shuai-Hua, Chen, Xi, and Fu, Liang. Apparatus and methods for memory using in-plane polarization. United States: N. p., 2018. Web.
Liu, Junwei, Chang, Kai, Ji, Shuai-Hua, Chen, Xi, & Fu, Liang. Apparatus and methods for memory using in-plane polarization. United States.
Liu, Junwei, Chang, Kai, Ji, Shuai-Hua, Chen, Xi, and Fu, Liang. Tue . "Apparatus and methods for memory using in-plane polarization". United States. https://www.osti.gov/servlets/purl/1438442.
@article{osti_1438442,
title = {Apparatus and methods for memory using in-plane polarization},
author = {Liu, Junwei and Chang, Kai and Ji, Shuai-Hua and Chen, Xi and Fu, Liang},
abstractNote = {A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}

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Works referenced in this record:

Ferroelectricity in Ultrathin Perovskite Films
journal, June 2004


Carrier-Concentration-Dependent Phase Transition in SnTe
journal, September 1976


Experimental observation of the quantum Hall effect and Berry's phase in graphene
journal, November 2005


The Influence of the Dipolar Field Effect on the Photochemical Reactivity of Sr2Nb2O7 and BaTiO3 Microcrystals
journal, May 2008


Phase Transition in SnTe with Low Carrier Concentration
journal, February 1975


Ferroelectricity in ultrathin perovskite films
journal, July 2005


Two-dimensional gas of massless Dirac fermions in graphene
journal, November 2005


Critical thickness for ferroelectricity in perovskite ultrathin films
journal, April 2003


Important Generalization Concerning the Role of Competing Forces in Displacive Phase Transitions
journal, December 1975


Ferroelectricity in Ultrathin BaTiO 3 Films: Probing the Size Effect by Ultraviolet Raman Spectroscopy
journal, October 2009


Superconductivity in one-atomic-layer metal films grown on Si(111)
journal, January 2010


Enhancement of Ferroelectricity in Strained BaTiO3 Thin Films
journal, November 2004


Ferroelectricity in thin perovskite films
journal, August 1999


Strongly enhanced charge-density-wave order in monolayer NbSe2
journal, July 2015


X-ray study of the structural phase transition in Sn x Ge 1 x Te
journal, November 1978


Ferromagnetic order and the critical exponent γ for a Gd monolayer: An electron-spin-resonance study
journal, February 1987


Two-dimensional ferroelectric films
journal, February 1998


Absence of Critical Thickness in an Ultrathin Improper Ferroelectric Film
journal, March 2009


Multiple Stable States with In-Plane Anisotropy in Ultrathin YMnO3 Films
journal, November 2010


Giant tunnel electroresistance for non-destructive readout of ferroelectric states
journal, May 2009


Disappearance of ferroelectric critical thickness in epitaxial ultrathin BaZr O 3 films
journal, November 2014


Magnetic Phase Transition in Two-Dimensional Ultrathin Fe Films on Au(100)
journal, January 1989


Stabilization of Monodomain Polarization in Ultrathin PbTiO 3 Films
journal, March 2006


The observation of critical behaviour in the thermal expansion of PbZr0.9Ti0.1O3
journal, June 1974


Observation of soft TO-phonon in SnTe by Raman scattering
journal, July 1977


Characterization of collective ground states in single-layer NbSe2
journal, November 2015


Ferroelectricity in Pb ( Zr 0.5 Ti 0.5 ) O 3 thin films: Critical thickness and 180° stripe domains
journal, September 2004


Microscopic model of ferroelectricity in stress-free PbTiO3 ultrathin films
journal, May 2000


Microscopic origin of the p -type conductivity of the topological crystalline insulator SnTe and the effect of Pb alloying
journal, January 2014


Topological crystalline insulators in the SnTe material class
journal, January 2012


Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
journal, July 2016


Band Structure and Laser Action in Pb x Sn 1 x Te
journal, June 1966


Dependence of Curie temperature on the thickness of an ultrathin ferroelectric film
journal, February 2010


High-temperature interface superconductivity between metallic and insulating copper oxides
journal, October 2008