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Title: Solar cells and methods of fabrication thereof

Abstract

A passivation layer is deposited on a first portion of a region of the solar cell. A grid line is deposited on a second portion of the region. The passivation layer is annealed to drive chemical species from the passivation layer to deactivate an electrical activity of a dopant in the first portion of the region of the solar cell.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Picasolar, Inc., Fayetteville, AR (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1438421
Patent Number(s):
9,960,287
Application Number:
14/178,216
Assignee:
Picasolar, Inc. (Fayetteville, AR) DOEEE
DOE Contract Number:  
EE0006461
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Feb 11
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Shumate, Seth Daniel, Hutchings, Douglas Arthur, Mohammed, Hafeezuddin, Young, Matthew, and Little, Scott. Solar cells and methods of fabrication thereof. United States: N. p., 2018. Web.
Shumate, Seth Daniel, Hutchings, Douglas Arthur, Mohammed, Hafeezuddin, Young, Matthew, & Little, Scott. Solar cells and methods of fabrication thereof. United States.
Shumate, Seth Daniel, Hutchings, Douglas Arthur, Mohammed, Hafeezuddin, Young, Matthew, and Little, Scott. Tue . "Solar cells and methods of fabrication thereof". United States. https://www.osti.gov/servlets/purl/1438421.
@article{osti_1438421,
title = {Solar cells and methods of fabrication thereof},
author = {Shumate, Seth Daniel and Hutchings, Douglas Arthur and Mohammed, Hafeezuddin and Young, Matthew and Little, Scott},
abstractNote = {A passivation layer is deposited on a first portion of a region of the solar cell. A grid line is deposited on a second portion of the region. The passivation layer is annealed to drive chemical species from the passivation layer to deactivate an electrical activity of a dopant in the first portion of the region of the solar cell.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {5}
}

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Works referenced in this record:

Solar cells and methods of fabrication thereof
patent-application, August 2013


High efficiency selective emitter enabled through patterned ion implantation
conference, June 2010

  • Low, Russell; Gupta, Atul; Bateman, Nicholas
  • 2010 35th IEEE Photovoltaic Specialists Conference
  • DOI: 10.1109/PVSC.2010.5614426

Hot-wire CVD-grown epitaxial Si films on Si (100) substrates and a model of epitaxial breakdown
journal, April 2006

  • Richardson, Christine E.; Mason, M. S.; Atwater, Harry A.
  • Thin Solid Films, Vol. 501, Issue 1-2, p. 332-334
  • DOI: 10.1016/j.tsf.2005.07.213

Add-on laser tailored selective emitter solar cells
journal, July 2010

  • R�der, T. C.; Eisele, S. J.; Grabitz, P.
  • Progress in Photovoltaics: Research and Applications, Vol. 18, Issue 7, p. 505-510
  • DOI: 10.1002/pip.1007

Recent progress on the self-aligned, selective-emitter silicon solar cell
conference, January 1997

  • Ruby, D. S.; Yang, P.; Roy, M.
  • Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997
  • DOI: 10.1109/PVSC.1997.653919

Reversible changes of the charge state of donor/hydrogen complexes initiated by hole capture in silicon
journal, September 1993

  • Seager, C. H.; Anderson, R. A.
  • Applied Physics Letters, Vol. 63, Issue 11, p. 1531-1533
  • DOI: 10.1063/1.110739

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures
journal, March 1996


15% efficiency (1 sun, air mass 1.5), large?area, 1.93 eV AlxGa1?xAs (x=0.37) n?p solar cell grown by metalorganic vapor phase epitaxy
journal, February 1988

  • Chung, B?C.; Hamaker, H. C.; Virshup, G. F.
  • Applied Physics Letters, Vol. 52, Issue 8, p. 631-633
  • DOI: 10.1063/1.99387

Deactivation of the boron acceptor in silicon by hydrogen
journal, July 1983

  • Sah, Chih?Tang; Sun, Jack Yuan?Chen; Tzou, Joseph Jeng?Tao
  • Applied Physics Letters, Vol. 43, Issue 2, p. 204-206
  • DOI: 10.1063/1.94287

Boron-hydrogen complexes in crystalline silicon
journal, January 1991

  • Herrero, C. P.; Stutzmann, M.; Breitschwerdt, A.
  • Physical Review B, Vol. 43, Issue 2, p. 1555-1575
  • DOI: 10.1103/PhysRevB.43.1555

CSG-1: Manufacturing a New Polycrystalline Silicon PV Technology
conference, May 2006


Enhanced hydrogenation and acceptor passivation in Si by pressurized water boiling
journal, July 1995

  • Ohmura, Y.; Otomo, Y.; Tago, Y.
  • Applied Physics Letters, Vol. 67, Issue 1, p. 64-66
  • DOI: 10.1063/1.115494

High-Efficiency n-Type Silicon Solar Cells with Front Side Boron Emitter
conference, September 2009


Hot-wire CVD growth simulation for thickness uniformity
journal, September 2001


Tradeoffs Between Impurity Gettering, Bulk Degradation, and Surface Passivation of Boron-Rich Layers on Silicon Solar Cells
journal, January 2013

  • Phang, Sieu Pheng; Liang, Wensheng; Wolpensinger, Bettina
  • IEEE Journal of Photovoltaics, Vol. 3, Issue 1, p. 261-266
  • DOI: 10.1109/JPHOTOV.2012.2226332

A comprehensive model of hydrogen transport into a solar cell during silicon nitride processing for fire-through metallization
conference, January 2005

  • Sopori, B.; Zhang, Yi.; Reedy, R.
  • Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005
  • DOI: 10.1109/PVSC.2005.1488311

Structural differences between deuterated and hydrogenated silicon nitride/oxynitride
journal, May 2001

  • Shih, An; Yeh, Shin-Hung; Lee, Si-Chen
  • Journal of Applied Physics, Vol. 89, Issue 10, p. 5355-5361
  • DOI: 10.1063/1.1364645

Calculation of semiconductor band gaps with the M06-L density functional
journal, February 2009

  • Zhao, Yan; Truhlar, Donald G.
  • The Journal of Chemical Physics, Vol. 130, Issue 7, Article No. 074103
  • DOI: 10.1063/1.3076922