Title: Integrated packaging of multiple double sided cooling planar bond power modules

Abstract

An integrated double sided cooled power module has one or multiple phase legs configuration including one or more planar power packages, each planar power package having an upper power switch unit and a lower power switch unit directly bonded and interconnected between two insulated power substrates, and further sandwiched between two heat exchangers via direct bonds. A segmented coolant manifold is interposed with the one or more planar power packages and creates a sealed enclosure that defines a coolant inlet, a coolant outlet and a coolant flow path between the inlet and the outlet. A coolant circulates along the flow path to remove heat and increase the power density of the power module.

Inventors:

Liang, Zhenxian

Issue Date:

2018-04-10

Research Org.:

Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1433849

Patent Number(s):

9941234

Application Number:

15/159,860

Assignee:

UT-Battelle, LLC (Oak Ridge, TN)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H02 - GENERATION H02M - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L2224/04026 - Bonding areas specifically adapted for layer connectors
H01L2224/05639 - Silver [Ag] as principal constituent
H01L2224/05644 - Gold [Au] as principal constituent
H01L2224/05655 - Nickel [Ni] as principal constituent
H01L2224/291 - with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
H01L2224/29139 - Silver [Ag] as principal constituent
H01L2224/32 - of an individual layer connector
H01L2224/32227 - the layer connector connecting to a bond pad of the item
H01L2224/32245 - the item being metallic
H01L2224/33181 - On opposite sides of the body
H01L2224/83424 - Aluminium [Al] as principal constituent
H01L2224/83447 - Copper [Cu] as principal constituent
H01L2224/83801 - Soldering or alloying
H01L2224/83825 - Solid-liquid interdiffusion
H01L2224/8383 - Solid-solid interdiffusion
H01L2224/8384 - Sintering
H01L23/3677 - {Wire-like or pin-like cooling fins or heat sinks}
H01L23/3735 - {Laminates or multilayers, e.g. direct bond copper ceramic substrates}
H01L23/4006 - {with bolts or screws}
H01L23/467 - by flowing gases, e.g. air {
H01L23/473 - by flowing liquids {
H01L23/5385 - {Assembly of a plurality of insulating substrates}
H01L24/05 - {of an individual bonding area}
H01L24/29 - {of an individual layer connector}
H01L24/32 - {of an individual layer connector}
H01L24/33 - {of a plurality of layer connectors}
H01L24/83 - {using a layer connector}
H01L25/18 - the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00 {
H01L2924/00014 - the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H01L2924/01028 - Nickel [Ni]
H01L2924/01047 - Silver [Ag]
H01L2924/01079 - Gold [Au]
H01L2924/014 - Solder alloys
H01L2924/10272 - Silicon Carbide [SiC]
H01L2924/12032 - Schottky diode
H01L2924/13091 - Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

H - ELECTRICITY H02 - GENERATION H02M - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS

H02M7/003 - {Constructional details, e.g. physical layout, assembly, wiring, busbar connections}

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DOE Contract Number:  

AC05-00OR22725

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 May 20

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING