Near-infrared light emitting device using semiconductor nanocrystals

Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

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Title: Near-infrared light emitting device using semiconductor nanocrystals

Abstract

A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

Inventors:: Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

Issue Date:: 2018-04-03

Research Org.:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1432811

Patent Number(s):: 9935240

Application Number:: 14/101,867

Assignee:: Massachusetts Institute of Technology (Cambridge, MA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02601 - {Nanoparticles
H01L31/035218 - {the quantum structure being quantum dots}
H01L31/055 - where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
H01L33/28 - containing only elements of group II and group VI of the periodic system

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/52 - PV systems with concentrators

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DOE Contract Number:: SC0001088

Resource Type:: Patent

Resource Relation:: Patent File Date: 2013 Dec 12

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION

Citation Formats


                    Supran, Geoffrey J.S., Song, Katherine W., Hwang, Gyuweon, Correa, Raoul Emile, Shirasaki, Yasuhiro, Bawendi, Moungi G., Bulovic, Vladimir, and Scherer, Jennifer. Near-infrared light emitting device using semiconductor nanocrystals.  United States: N. p., 2018. 
        Web.

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                    Supran, Geoffrey J.S., Song, Katherine W., Hwang, Gyuweon, Correa, Raoul Emile, Shirasaki, Yasuhiro, Bawendi, Moungi G., Bulovic, Vladimir, & Scherer, Jennifer. Near-infrared light emitting device using semiconductor nanocrystals.  United States.

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                    Supran, Geoffrey J.S., Song, Katherine W., Hwang, Gyuweon, Correa, Raoul Emile, Shirasaki, Yasuhiro, Bawendi, Moungi G., Bulovic, Vladimir, and Scherer, Jennifer. Tue .  
        "Near-infrared light emitting device using semiconductor nanocrystals".  United States.  https://www.osti.gov/servlets/purl/1432811.

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@article{osti_1432811,

  title        = {Near-infrared light emitting device using semiconductor nanocrystals},

  author       = {Supran, Geoffrey J.S. and Song, Katherine W. and Hwang, Gyuweon and Correa, Raoul Emile and Shirasaki, Yasuhiro and Bawendi, Moungi G. and Bulovic, Vladimir and Scherer, Jennifer},

  abstractNote = {A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {4}

}

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Similar Records

Title: Near-infrared light emitting device using semiconductor nanocrystals

Abstract

Citation Formats

Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots patent, April 2008

Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions patent, November 2014

Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same patent-application, June 2005

Optically-regulated optical emission using colloidal quantum dot nanocrystals patent-application, October 2005

Micronized semiconductor nanocrystal complexes and methods of making and using same patent-application, March 2007

Light emitting devices including semiconductor nanocrystals patent-application, May 2007

Light emitting device including semiconductor nanocrystals patent-application, March 2008

Light-Emitting Element, Light-Emitting Device, And Information Display Device patent-application, March 2009

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Quantum Dot Electroluminescent Device patent-application, May 2010

Light Emitting Device Including Semiconductor Nanocrystals patent-application, April 2011

Quantum Dot-Fullerene Junction Optoelectronic Devices patent-application, September 2012

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patent, April 2008

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patent-application, June 2005

Optically-regulated optical emission using colloidal quantum dot nanocrystals
patent-application, October 2005

Micronized semiconductor nanocrystal complexes and methods of making and using same
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