Near-infrared light emitting device using semiconductor nanocrystals

Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

Title: Near-infrared light emitting device using semiconductor nanocrystals

Abstract

A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

Inventors:: Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

Issue Date:: 2018-04-03

Research Org.:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1432811

Patent Number(s):: 9935240

Application Number:: 14/101,867

Assignee:: Massachusetts Institute of Technology (Cambridge, MA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02601 - {Nanoparticles
H01L31/035218 - {the quantum structure being quantum dots}
H01L31/055 - where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
H01L33/28 - containing only elements of group II and group VI of the periodic system

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/52 - PV systems with concentrators

Show less

DOE Contract Number:: SC0001088

Resource Type:: Patent

Resource Relation:: Patent File Date: 2013 Dec 12

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION

Citation Formats


                    Supran, Geoffrey J.S., Song, Katherine W., Hwang, Gyuweon, Correa, Raoul Emile, Shirasaki, Yasuhiro, Bawendi, Moungi G., Bulovic, Vladimir, and Scherer, Jennifer. Near-infrared light emitting device using semiconductor nanocrystals.  United States: N. p., 2018. 
        Web.

Copy to clipboard


                    Supran, Geoffrey J.S., Song, Katherine W., Hwang, Gyuweon, Correa, Raoul Emile, Shirasaki, Yasuhiro, Bawendi, Moungi G., Bulovic, Vladimir, & Scherer, Jennifer. Near-infrared light emitting device using semiconductor nanocrystals.  United States.

Copy to clipboard


                    Supran, Geoffrey J.S., Song, Katherine W., Hwang, Gyuweon, Correa, Raoul Emile, Shirasaki, Yasuhiro, Bawendi, Moungi G., Bulovic, Vladimir, and Scherer, Jennifer. Tue .  
        "Near-infrared light emitting device using semiconductor nanocrystals".  United States.  https://www.osti.gov/servlets/purl/1432811.

Copy to clipboard


                    
@article{osti_1432811,

  title        = {Near-infrared light emitting device using semiconductor nanocrystals},

  author       = {Supran, Geoffrey J.S. and Song, Katherine W. and Hwang, Gyuweon and Correa, Raoul Emile and Shirasaki, Yasuhiro and Bawendi, Moungi G. and Bulovic, Vladimir and Scherer, Jennifer},

  abstractNote = {A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {4}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots
patent, April 2008

Yang, Tsun-Neng; Lan, Shan-Ming
US Patent Document 7,358,101
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7358101

Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions
patent, November 2014

Gibson, Gary; Sheng, Xia
US Patent Document 8,884,511
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8884511

Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
patent-application, June 2005

Peng, Xiaogang; Li, Jainqing; Battaglia, David
US Patent Application 10/763068; 20050129947
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20050129947

Optically-regulated optical emission using colloidal quantum dot nanocrystals
patent-application, October 2005

Sargent, Edward; Bakoueva, Lioudmila; Musikhin, Sergei
US Patent Application 11/108900; 20050236556
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20050236556

Micronized semiconductor nanocrystal complexes and methods of making and using same
patent-application, March 2007

Gillies, Jennifer; Hines, Margaret
US Patent Application 11/175196; 20070045777
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070045777

Light emitting devices including semiconductor nanocrystals
patent-application, May 2007

Bawendi, Moungi G.; Bulovic, Vladimir; Coe-Sullivan, Seth
US Patent Application 11/354185; 20070103068
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070103068

Light emitting device including semiconductor nanocrystals
patent-application, March 2008

Chen, Jianglong; Bulovic, Vladimir; Anikeeva, Polina
US Patent Application 11/750824; 20080074050
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20080074050

Light-Emitting Element, Light-Emitting Device, And Information Display Device
patent-application, March 2009

Koshida, Nobuyoshi; Kojima, Akira
US Patent Application 11/658578; 20090078928
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090078928

Light-emitting devices and displays with improved performance
patent-application, November 2009

Coe-Sullivan, Seth; Ramprasad, Dorai; Kymissis, Ioannis
US Patent Application 12/313779; 20090278141
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090278141

Quantum Dot Electroluminescent Device
patent-application, May 2010

Yang, San Ming; Sanchez, Luis A.
US Patent Application 12/582793; 20100109521
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20100109521

Light Emitting Device Including Semiconductor Nanocrystals
patent-application, April 2011

Wood, Vanessa; Panzer, Matthew J.; Caruge, Jean-Michel
US Patent Application 12/776112; 20110080090
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20110080090

Quantum Dot-Fullerene Junction Optoelectronic Devices
patent-application, September 2012

Klem, Ethan; Lewis, John
US Patent Application 13/499024; 20120241723
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20120241723

Similar Records in DOE Patents and OSTI.GOV collections:

Deposition of semiconductor nanocrystals for light emitting devices

Patent Bulovic, Vladimir; Song, Katherine Wei; Costi, Ronny

A method of depositing semiconductor nanocrystals on a surface can include applying a voltage to the nanocrystals.
Full Text Available
Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same

Patent Tansu, Nelson; Gilchrist, James F; Ee, Yik-Khoon; ...

A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithographymore » « less
Full Text Available
Efficient semiconductor light-emitting device and method

Patent Choquette, Kent D [Albuquerque, NM]; Lear, Kevin L [Albuquerque, NM]; Schneider, Jr., Richard P. (Albuquerque, NM)

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) ormore » « less
Full Text Available
Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods

Patent LeToquin, Ronan P; Tong, Tao; Glass, Robert C

Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.
Full Text Available
Oxycarbonitride phosphors and light emitting devices using the same

Patent Li, Yuanqiang; Romanelli, Michael D.; Tian, Yongchi

A family of oxycarbonitride phosphor compositions is provided. Also provided are light emitting devices incorporating the oxycarbonitride phosphor compositions.
Full Text Available

Similar Records

Title: Near-infrared light emitting device using semiconductor nanocrystals

Abstract

Citation Formats

Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots patent, April 2008

Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions patent, November 2014

Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same patent-application, June 2005

Optically-regulated optical emission using colloidal quantum dot nanocrystals patent-application, October 2005

Micronized semiconductor nanocrystal complexes and methods of making and using same patent-application, March 2007

Light emitting devices including semiconductor nanocrystals patent-application, May 2007

Light emitting device including semiconductor nanocrystals patent-application, March 2008

Light-Emitting Element, Light-Emitting Device, And Information Display Device patent-application, March 2009

Light-emitting devices and displays with improved performance patent-application, November 2009

Quantum Dot Electroluminescent Device patent-application, May 2010

Light Emitting Device Including Semiconductor Nanocrystals patent-application, April 2011

Quantum Dot-Fullerene Junction Optoelectronic Devices patent-application, September 2012

Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots
patent, April 2008

Luminescent materials having nanocrystals exhibiting multi-modal energy level distributions
patent, November 2014

Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
patent-application, June 2005

Optically-regulated optical emission using colloidal quantum dot nanocrystals
patent-application, October 2005

Micronized semiconductor nanocrystal complexes and methods of making and using same
patent-application, March 2007

Light emitting devices including semiconductor nanocrystals
patent-application, May 2007

Light emitting device including semiconductor nanocrystals
patent-application, March 2008

Light-Emitting Element, Light-Emitting Device, And Information Display Device
patent-application, March 2009

Light-emitting devices and displays with improved performance
patent-application, November 2009

Quantum Dot Electroluminescent Device
patent-application, May 2010

Light Emitting Device Including Semiconductor Nanocrystals
patent-application, April 2011

Quantum Dot-Fullerene Junction Optoelectronic Devices
patent-application, September 2012