Title: Selective, electrochemical etching of a semiconductor

Abstract

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Inventors:

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

Issue Date:

Tue Mar 20 00:00:00 EDT 2018

Research Org.:

Rensselaer Polytechnic Inst., Troy, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1429084

Patent Number(s):

9922838

Application Number:

15/116,041

Assignee:

Rensselaer Polytechnic Institute, Troy, NY

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/3063 - Electrolytic etching
H01L21/30635 - {of AIIIBV compounds}
H01L21/3228 - {of AIIIBV compounds, e.g. to make them semi-insulating}
H01L21/465 - Chemical or electrical treatment, e.g. electrolytic etching
H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer
H01L29/1608 - {Silicon carbide}
H01L29/2003 - {Nitride compounds}
H01L29/6606 - {the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices}
H01L29/66204 - {Diodes}
H01L29/66212 - {Schottky diodes}
H01L29/66333 - {Vertical insulated gate bipolar transistors}
H01L29/7395 - {Vertical transistors, e.g. vertical IGBT}
H01L29/868 - PIN diodes
H01L29/872 - Schottky diodes

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DOE Contract Number:  

AR0000304

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Feb 10

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING