skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Monolithic active pixel radiation detector with shielding techniques

Abstract

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Inventors:
Issue Date:
Research Org.:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1429079
Patent Number(s):
9,923,017
Application Number:
15/168,578
Assignee:
Fermi Research Alliance, LLC (Batavia, IL) FNAL
DOE Contract Number:  
AC02-07CH11359
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 May 31
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Deptuch, Grzegorz W. Monolithic active pixel radiation detector with shielding techniques. United States: N. p., 2018. Web.
Deptuch, Grzegorz W. Monolithic active pixel radiation detector with shielding techniques. United States.
Deptuch, Grzegorz W. Tue . "Monolithic active pixel radiation detector with shielding techniques". United States. https://www.osti.gov/servlets/purl/1429079.
@article{osti_1429079,
title = {Monolithic active pixel radiation detector with shielding techniques},
author = {Deptuch, Grzegorz W.},
abstractNote = {A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

Patent:

Save / Share:

Works referenced in this record: