Monolithic active pixel radiation detector with shielding techniques
Abstract
A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.
- Inventors:
- Issue Date:
- Research Org.:
- Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1429079
- Patent Number(s):
- 9923017
- Application Number:
- 15/168,578
- Assignee:
- Fermi Research Alliance, LLC (Batavia, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-07CH11359
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 May 31
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION
Citation Formats
Deptuch, Grzegorz W. Monolithic active pixel radiation detector with shielding techniques. United States: N. p., 2018.
Web.
Deptuch, Grzegorz W. Monolithic active pixel radiation detector with shielding techniques. United States.
Deptuch, Grzegorz W. Tue .
"Monolithic active pixel radiation detector with shielding techniques". United States. https://www.osti.gov/servlets/purl/1429079.
@article{osti_1429079,
title = {Monolithic active pixel radiation detector with shielding techniques},
author = {Deptuch, Grzegorz W.},
abstractNote = {A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}
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