Title: Synthesis of silicon containing materials using liquid hydrosilane compositions through direct injection

Abstract

An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.

Inventors:

Srinivasan, Guruvenket; Sailer, Robert A.; Hoey, Justin

Issue Date:

2018-03-13

Research Org.:

NDSU Research Foundation, Fargo, ND (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1426793

Patent Number(s):

9914998

Application Number:

14/853,462

Assignee:

NDSU Research Foundation, Fargo, ND

Patent Classifications (CPCs):

C - CHEMISTRY C08 - ORGANIC MACROMOLECULAR COMPOUNDS C08G - MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS

C - CHEMISTRY C09 - DYES C09D - COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS

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C - CHEMISTRY C08 - ORGANIC MACROMOLECULAR COMPOUNDS C08G - MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS

C08G77/60 - in which all the silicon atoms are connected by linkages other than oxygen atoms

C - CHEMISTRY C09 - DYES C09D - COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS

C09D183/16 - in which all the silicon atoms are connected by linkages other than oxygen atoms

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C16/0209 - {by heating}
C23C16/24 - Deposition of silicon only
C23C16/345 - {Silicon nitride}
C23C16/4486 - {by producing an aerosol and subsequent evaporation of the droplets or particles}
C23C16/56 - After-treatment
C23C18/02 - by thermal decomposition
C23C18/1204 - {inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds}
C23C18/122 - {Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes}
C23C18/1258 - {Spray pyrolysis}
C23C18/127 - {Preformed particles}
C23C18/1291 - {by heating of the substrate}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02118 - {carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/0259 - {Microstructure}
H01L21/02592 - {amorphous}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

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DOE Contract Number:  

FG36-08G088160

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Sep 14

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE