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Title: Diode and method of making the same

Abstract

A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.

Inventors:
; ; ;
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1425959
Patent Number(s):
9,917,149
Application Number:
15/166,783
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 May 27
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE

Citation Formats

Dickerson, Jeramy Ray, Wierer, Jr., Jonathan, Kaplar, Robert, and Allerman, Andrew A. Diode and method of making the same. United States: N. p., 2018. Web.
Dickerson, Jeramy Ray, Wierer, Jr., Jonathan, Kaplar, Robert, & Allerman, Andrew A. Diode and method of making the same. United States.
Dickerson, Jeramy Ray, Wierer, Jr., Jonathan, Kaplar, Robert, and Allerman, Andrew A. Tue . "Diode and method of making the same". United States. https://www.osti.gov/servlets/purl/1425959.
@article{osti_1425959,
title = {Diode and method of making the same},
author = {Dickerson, Jeramy Ray and Wierer, Jr., Jonathan and Kaplar, Robert and Allerman, Andrew A.},
abstractNote = {A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

Patent:

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Works referenced in this record:

Vertical GaN Power Diodes With a Bilayer Edge Termination
journal, January 2016

  • Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.
  • IEEE Transactions on Electron Devices, Vol. 63, Issue 1, p. 419-425
  • DOI: 10.1109/TED.2015.2502186