Diode and method of making the same
Abstract
A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1425959
- Patent Number(s):
- 9917149
- Application Number:
- 15/166,783
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 May 27
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 25 ENERGY STORAGE
Citation Formats
Dickerson, Jeramy Ray, Wierer, Jr., Jonathan, Kaplar, Robert, and Allerman, Andrew A. Diode and method of making the same. United States: N. p., 2018.
Web.
Dickerson, Jeramy Ray, Wierer, Jr., Jonathan, Kaplar, Robert, & Allerman, Andrew A. Diode and method of making the same. United States.
Dickerson, Jeramy Ray, Wierer, Jr., Jonathan, Kaplar, Robert, and Allerman, Andrew A. Tue .
"Diode and method of making the same". United States. https://www.osti.gov/servlets/purl/1425959.
@article{osti_1425959,
title = {Diode and method of making the same},
author = {Dickerson, Jeramy Ray and Wierer, Jr., Jonathan and Kaplar, Robert and Allerman, Andrew A.},
abstractNote = {A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 13 00:00:00 EDT 2018},
month = {Tue Mar 13 00:00:00 EDT 2018}
}
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Works referenced in this record:
High-withstand voltage wide-gap semiconductor device and power device
patent-application, July 2007
- Sugawara, Yoshitaka
- US Patent Application 10/588523; 20070170436
Method And System For Junction Termination In Gan Materials Using Conductivity Modulation
patent-application, June 2013
- Nie, Hui; Edwards, Andrew; Disney, Donald
- US Patent Application 13/334742; 20130161633
Method And System For Fabricating Edge Termination Structures In GaN Materials
patent-application, June 2013
- Disney, Donald; Kizilyalli, Isik; Romano, Linda
- US Patent Application 13/335383; 20130161634
Method Of Fabricating A GaN P-I-N Diode Using Implantation
patent-application, June 2013
- Kizilyalli, Isik; Nie, Hui; Edwards, Andrew
- US Patent Application 13/335329; 20130161780
Vertical GaN Power Device With Breakdown Voltage Control
patent-application, June 2014
- Disney, Donald
- US Patent Application 13/721542; 20140175450
Vertical GaN Power Diodes With a Bilayer Edge Termination
journal, January 2016
- Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.
- IEEE Transactions on Electron Devices, Vol. 63, Issue 1, p. 419-425