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Title: Multilayer capacitors, method for making multilayer capacitors

Abstract

The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1425940
Patent Number(s):
9908817
Application Number:
13/528,544
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jun 20
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Ma, Beihai, and Balachandran, Uthamalingam. Multilayer capacitors, method for making multilayer capacitors. United States: N. p., 2018. Web.
Ma, Beihai, & Balachandran, Uthamalingam. Multilayer capacitors, method for making multilayer capacitors. United States.
Ma, Beihai, and Balachandran, Uthamalingam. Tue . "Multilayer capacitors, method for making multilayer capacitors". United States. https://www.osti.gov/servlets/purl/1425940.
@article{osti_1425940,
title = {Multilayer capacitors, method for making multilayer capacitors},
author = {Ma, Beihai and Balachandran, Uthamalingam},
abstractNote = {The invention provides a stacked capacitor configuration comprising subunits each with a thickness of as low as 20 microns. Also provided is combination capacitor and printed wire board wherein the capacitor is encapsulated by the wire board. The invented capacitors are applicable in micro-electronic applications and high power applications, whether it is AC to DC or DC to AC, or DC to DC.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

Patent:

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Works referenced in this record:

Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers
journal, February 2001


Evolution of materials technology for stacked-capacitors in 65nm embedded-DRAM
journal, November 2005


Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils
journal, January 2008