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Title: Reducing leakage current in semiconductor devices

Abstract

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Inventors:
; ;
Issue Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1425209
Patent Number(s):
9911813
Application Number:
14/651,012
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AR0000123
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Dec 11
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Lu, Bin, Matioli, Elison de Nazareth, and Palacios, Tomas Apostol. Reducing leakage current in semiconductor devices. United States: N. p., 2018. Web.
Lu, Bin, Matioli, Elison de Nazareth, & Palacios, Tomas Apostol. Reducing leakage current in semiconductor devices. United States.
Lu, Bin, Matioli, Elison de Nazareth, and Palacios, Tomas Apostol. Tue . "Reducing leakage current in semiconductor devices". United States. https://www.osti.gov/servlets/purl/1425209.
@article{osti_1425209,
title = {Reducing leakage current in semiconductor devices},
author = {Lu, Bin and Matioli, Elison de Nazareth and Palacios, Tomas Apostol},
abstractNote = {A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}

Patent:

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Works referenced in this record:

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