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Title: Reducing leakage current in semiconductor devices

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.
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Issue Date:
OSTI Identifier:
Massachusetts Institute of Technology (Cambridge, MA) ARPA-E
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2013 Dec 11
Research Org:
Massachusetts Institute of Technology, Cambridge, MA (United States)
Sponsoring Org:
Country of Publication:
United States

Other works cited in this record:

Method of anisotropically etching silicon
patent, March 1996

Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher
journal, January 1999
  • Ayon, A. A.; Braff, R.; Lin, C. C.
  • Journal of The Electrochemical Society, Vol. 146, Issue 1, p. 339-349
  • DOI: 10.1149/1.1391611

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