Title: Reducing leakage current in semiconductor devices

Abstract

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Inventors:

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

Issue Date:

2018-03-06

Research Org.:

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1425209

Patent Number(s):

9911813

Application Number:

14/651,012

Assignee:

Massachusetts Institute of Technology (Cambridge, MA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/0254 - {Nitrides}
H01L21/30604 - {Chemical etching}
H01L21/8258 - the substrate being a semiconductor, using a combination of technologies covered by {H01L21/8206, H01L21/8213} , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
H01L29/0649 - {Dielectric regions, e.g. SiO2 regions, air gaps}
H01L29/0688 - {characterised by the particular shape of a junction between semiconductor regions}
H01L29/1033 - {with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
H01L29/1079 - {with insulated gate}
H01L29/2003 - {Nitride compounds}
H01L29/267 - in different semiconductor regions {, e.g. heterojunctions
H01L29/7786 - {with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT}
H01L29/78 - with field effect produced by an insulated gate {

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DOE Contract Number:  

AR0000123

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013 Dec 11

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING