Metal-assisted etch combined with regularizing etch
Abstract
In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Advanced Silicon Group, Inc., Lincoln, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1424402
- Patent Number(s):
- 9,911,878
- Application Number:
- 14/917,698
- Assignee:
- Advanced Silicon Group, Inc. (Lincoln, MA)
- DOE Contract Number:
- EE0005323
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Aug 27
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Yim, Joanne, Miller, Jeff, Jura, Michael, Black, Marcie R., Forziati, Joanne, Murphy, Brian, and Magliozzi, Lauren. Metal-assisted etch combined with regularizing etch. United States: N. p., 2018.
Web.
Yim, Joanne, Miller, Jeff, Jura, Michael, Black, Marcie R., Forziati, Joanne, Murphy, Brian, & Magliozzi, Lauren. Metal-assisted etch combined with regularizing etch. United States.
Yim, Joanne, Miller, Jeff, Jura, Michael, Black, Marcie R., Forziati, Joanne, Murphy, Brian, and Magliozzi, Lauren. Tue .
"Metal-assisted etch combined with regularizing etch". United States. https://www.osti.gov/servlets/purl/1424402.
@article{osti_1424402,
title = {Metal-assisted etch combined with regularizing etch},
author = {Yim, Joanne and Miller, Jeff and Jura, Michael and Black, Marcie R. and Forziati, Joanne and Murphy, Brian and Magliozzi, Lauren},
abstractNote = {In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}
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