Metal-assisted etch combined with regularizing etch
Abstract
In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Advanced Silicon Group, Inc., Lincoln, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1424402
- Patent Number(s):
- 9911878
- Application Number:
- 14/917,698
- Assignee:
- Advanced Silicon Group, Inc. (Lincoln, MA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- EE0005323
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Aug 27
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Yim, Joanne, Miller, Jeff, Jura, Michael, Black, Marcie R., Forziati, Joanne, Murphy, Brian, and Magliozzi, Lauren. Metal-assisted etch combined with regularizing etch. United States: N. p., 2018.
Web.
Yim, Joanne, Miller, Jeff, Jura, Michael, Black, Marcie R., Forziati, Joanne, Murphy, Brian, & Magliozzi, Lauren. Metal-assisted etch combined with regularizing etch. United States.
Yim, Joanne, Miller, Jeff, Jura, Michael, Black, Marcie R., Forziati, Joanne, Murphy, Brian, and Magliozzi, Lauren. Tue .
"Metal-assisted etch combined with regularizing etch". United States. https://www.osti.gov/servlets/purl/1424402.
@article{osti_1424402,
title = {Metal-assisted etch combined with regularizing etch},
author = {Yim, Joanne and Miller, Jeff and Jura, Michael and Black, Marcie R. and Forziati, Joanne and Murphy, Brian and Magliozzi, Lauren},
abstractNote = {In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {3}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Method for enhancing electrode surface area in DRAM cell capacitors
patent-application, July 2003
- Yates, Donald L.; Mercaldi, Garry A.; Hofmann, James J.
- US Patent Document 10/050390; 20030134436
Methods for bonding wafers using a metal interlayer
patent-application, December 2004
- Ramanathan, Shriram; Chebiam, Ramanan; Kobrinsky, Mauro J.
- US Patent Document 10/611395; 20040262772
Solar Cell and Process for Producing the Same
patent-application, March 2007
- Inomata, Yosuke
- US Patent Document 11/535844; 20070062575
Process for Fabricating Nanowire Arrays
patent-application, October 2009
- Buchine, Brent A.; Modawar, Faris; Black, Marcie R.
- US Patent Document 12/423623; 20090256134
Silicon Substrate Having Nanostructures and Method for Producing the Same and Application Thereof
patent-application, August 2011
- Lin, Ching-Fuh; Syu, Shu-Jia
- US Patent Document 12/713094; 20110204489
Silicon Nanostructures and Method for Producing the Same and Application Thereof
patent-application, September 2011
- Lin, Ching-Fuh; Syu, Shu-Jia
- US Patent Document 12/790331; 20110215441
Electrical Contacts to Nanostructured Areas
patent-application, April 2013
- Black, Marcie R.; Forziati, Joanne; Jura, Michael
- US Patent Document 13/622864; 20130099345
Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics
journal, April 2012
- Li, Xiuling
- Current Opinion in Solid State and Materials Science, Vol. 16, Issue 2, p. 71-81
Metal-Assisted Chemical Etching of Silicon: A Review
journal, September 2010
- Huang, Zhipeng; Geyer, Nadine; Werner, Peter
- Advanced Materials, Vol. 23, Issue 2, p. 285-308
Metal-assisted chemical etching of silicon in HF–H2O2
journal, July 2008
- Chartier, C.; Bastide, S.; Lévy-Clément, C.
- Electrochimica Acta, Vol. 53, Issue 17, p. 5509-5516