Global to push GA events into
skip to main content

Title: Metal-assisted etch combined with regularizing etch

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
Inventors:
; ; ; ; ; ;
Issue Date:
OSTI Identifier:
1424402
Assignee:
Advanced Silicon Group, Inc. (Lincoln, MA) GFO
Patent Number(s):
9,911,878
Application Number:
14/917,698
Contract Number:
EE0005323
Resource Relation:
Patent File Date: 2014 Aug 27
Research Org:
Advanced Silicon Group, Inc., Lincoln, MA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English

Works referenced in this record:

Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics
journal, April 2012

Metal-Assisted Chemical Etching of Silicon: A Review
journal, September 2010
  • Huang, Zhipeng; Geyer, Nadine; Werner, Peter
  • Advanced Materials, Vol. 23, Issue 2, p. 285-308
  • DOI: 10.1002/adma.201001784

Metal-assisted chemical etching of silicon in HF–H2O2
journal, July 2008