Metal-assisted etch combined with regularizing etch

Title: Metal-assisted etch combined with regularizing etch

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

Inventors:: Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

Issue Date:: 2018-03-06

OSTI Identifier:: 1424402

Assignee:: Advanced Silicon Group, Inc. (Lincoln, MA) GFO

Patent Number(s):: 9,911,878

Application Number:: 14/917,698

Contract Number:: EE0005323

Resource Relation:: Patent File Date: 2014 Aug 27

Research Org:: Advanced Silicon Group, Inc., Lincoln, MA (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Full Text
View Full Text

Have feedback or suggestions for a way to improve these results? !

Save / Share this Record no
Export Metadata
- Endnote
- RIS
- Excel
- CSV
- XML
Send to Email

Send to Email

Email address:

Content:

Works referenced in this record:

Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics
journal, April 2012

Li, Xiuling
Current Opinion in Solid State and Materials Science, Vol. 16, Issue 2, p. 71-81
DOI: 10.1016/j.cossms.2011.11.002

Metal-Assisted Chemical Etching of Silicon: A Review
journal, September 2010

Huang, Zhipeng; Geyer, Nadine; Werner, Peter
Advanced Materials, Vol. 23, Issue 2, p. 285-308
DOI: 10.1002/adma.201001784

Metal-assisted chemical etching of silicon in HF–H₂O₂
journal, July 2008

Chartier, C.; Bastide, S.; Lévy-Clément, C.
Electrochimica Acta, Vol. 53, Issue 17, p. 5509-5516
DOI: 10.1016/j.electacta.2008.03.009

Similar Records

Similar records in DOepatents and OSTI.GOV collections:

Metal-assisted chemical etch porous silicon formation method

Patent Li, Xiuling ; Bohn, Paul W. ; Sweedler, Jonathan V.

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absencemore » of illumination.« less
Full Text Available September 2004
Method and apparatus for performing in-situ vacuum-assisted metal to glass sealing

Patent Kramer, Daniel P. ; Massey, Richard T.

A method and apparatus for assembling and fusing glass to metal in a glass-metal electrical component is disclosed. The component includes a metallic shell formed with upper and lower cylindrical recesses connected together by longitudinal passages, a pair of metal rings and plural metal pins assembled to define electrical feed-throughs. The component parts are assembled on a fixture having a sleeve-like projection and a central mounting projection establishing concentric nesting surfaces to which the metal rings are slip-fitted in concentric alignment with each other spaced from sidewalls of the lower recess. The pins are in electrical contact with the metalmore »« less
Full Text Available January 1986
Semiconductor assisted metal deposition for nanolithography applications

Patent Rajh, Tijana ; Meshkov, Natalia ; Nedelijkovic, Jovan M. ; Skubal, Laura R. ; Tiede, David M. ; Thurnauer, Marion

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
Full Text Available January 2001
Semiconductor assisted metal deposition for nanolithography applications

Patent Rajh, Tijana ; Meshkov, Natalia ; Nedelijkovic, Jovan M. ; Skubal, Laura R. ; Tiede, David M. ; Thurnauer, Marion

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
Full Text Available January 2002
Polymer-assisted aqueous deposition of metal oxide films

Patent Li, DeQuan ; Jia, Quanxi

An organic solvent-free process for deposition of metal oxide thin films is presented. The process includes aqueous solutions of necessary metal precursors and an aqueous solution of a water-soluble polymer. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films.
Full Text Available July 2003