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Title: Metallic nanomesh

A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300.OMEGA./.quadrature. when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1422748
Assignee:
UNIVERSITY OF HOUSTON SYSTEM (Houston, TX) CHO
Patent Number(s):
9,899,117
Application Number:
14/298,090
Contract Number:
FG02-13ER46917
Resource Relation:
Patent File Date: 2014 Jun 06
Research Org:
University of Houston System, Houston, TX (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English

Other works cited in this record:

Metal deposition using seed layers
patent-application, August 2012

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