Global to push GA events into
skip to main content

Title: Nanostructured layers of thermoelectric materials

This disclosure provides systems, methods, and apparatus related to thermoelectric materials. In one aspect, a method includes providing a plurality of nanostructures. The plurality of nanostructures comprise a thermoelectric material, with each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure. The plurality of nanostructures is mixed with a solution containing second ligands and a ligand exchange process occurs in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands. The plurality of nanostructures is deposited on a substrate to form a layer. The layer is thermally annealed.
Inventors:
; ; ; ; ; ;
Issue Date:
OSTI Identifier:
1418824
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
Patent Number(s):
9,882,108
Application Number:
15/254,412
Contract Number:
AC02-05CH11231
Resource Relation:
Patent File Date: 2016 Sep 01
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Works referenced in this record:

Cooling, Heating, Generating Power, and Recovering Waste Heat with Thermoelectric Systems
journal, September 2008

Effect of Interfacial Properties on Polymer-Nanocrystal Thermoelectric Transport
journal, January 2013
  • Coates, Nelson E.; Yee, Shannon K.; McCulloch, Bryan
  • Advanced Materials, Vol. 25, Issue 11, p. 1629-1633
  • DOI: 10.1002/adma.201203915

Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States
journal, July 2008
  • Heremans, J. P.; Jovovic, V.; Toberer, E. S.
  • Science, Vol. 321, Issue 5888, p. 554-557
  • DOI: 10.1126/science.1159725

PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors
journal, October 2005

High thermoelectric performance by resonant dopant indium in nanostructured SnTe
journal, July 2013
  • Zhang, Q.; Liao, B.; Lan, Y.
  • Proceedings of the National Academy of Sciences, Vol. 110, Issue 33, p. 13261-13266
  • DOI: 10.1073/pnas.1305735110