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Title: Gallium beam lithography for superconductive structure formation

The present invention relates to the use of gallium beam lithography to form superconductive structures. Generally, the method includes exposing a surface to gallium to form an implanted region and then removing material adjacent to and/or below that implanted region. In particular embodiments, the methods herein provide microstructures and nanostructures in any useful substrate, such as those including niobium, tantalum, tungsten, or titanium.
Inventors:
;
Issue Date:
OSTI Identifier:
1418806
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL-A
Patent Number(s):
9,882,113
Application Number:
14/742,505
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2015 Jun 17
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching
journal, October 2013

Direct write patterning of titanium films using focused ion beam implantation and plasma etching
journal, February 1997

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