Gallium beam lithography for superconductive structure formation
Abstract
The present invention relates to the use of gallium beam lithography to form superconductive structures. Generally, the method includes exposing a surface to gallium to form an implanted region and then removing material adjacent to and/or below that implanted region. In particular embodiments, the methods herein provide microstructures and nanostructures in any useful substrate, such as those including niobium, tantalum, tungsten, or titanium.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1418806
- Patent Number(s):
- 9882113
- Application Number:
- 14/742,505
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01B - CABLES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Jun 17
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Henry, Michael David, and Lewis, Rupert M. Gallium beam lithography for superconductive structure formation. United States: N. p., 2018.
Web.
Henry, Michael David, & Lewis, Rupert M. Gallium beam lithography for superconductive structure formation. United States.
Henry, Michael David, and Lewis, Rupert M. Tue .
"Gallium beam lithography for superconductive structure formation". United States. https://www.osti.gov/servlets/purl/1418806.
@article{osti_1418806,
title = {Gallium beam lithography for superconductive structure formation},
author = {Henry, Michael David and Lewis, Rupert M.},
abstractNote = {The present invention relates to the use of gallium beam lithography to form superconductive structures. Generally, the method includes exposing a surface to gallium to form an implanted region and then removing material adjacent to and/or below that implanted region. In particular embodiments, the methods herein provide microstructures and nanostructures in any useful substrate, such as those including niobium, tantalum, tungsten, or titanium.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 30 00:00:00 EST 2018},
month = {Tue Jan 30 00:00:00 EST 2018}
}
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