Graphene layer formation at low substrate temperature on a metal and carbon based substrate

Title: Graphene layer formation at low substrate temperature on a metal and carbon based substrate

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Inventors:: Sumant, Anirudha V.; Berman, Diana

Issue Date:: 2018-01-23

OSTI Identifier:: 1417969

Assignee:: UChicago Argonne, LLC (Chicago, IL) ANL

Patent Number(s):: 9,875,894

Application Number:: 14/563,201

Contract Number:: AC02-06CH11357

Resource Relation:: Patent File Date: 2014 Dec 08

Research Org:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

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