Title: Graphene layer formation at low substrate temperature on a metal and carbon based substrate

Abstract

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Inventors:

Sumant, Anirudha V.; Berman, Diana

Issue Date:

2018-01-23

Research Org.:

Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1417969

Patent Number(s):

9875894

Application Number:

14/563,201

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02491 - {Conductive materials}
H01L21/02527 - {Carbon, e.g. diamond-like carbon}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y40/00 - Manufacture or treatment of nanostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02376 - {Carbon, e.g. diamond-like carbon}
H01L21/02612 - {Formation types}
H01L21/02444 - {Carbon, e.g. diamond-like carbon}
H01L21/02488 - {Insulating materials}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

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DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Dec 08

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE