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Title: Graphene layer formation at low substrate temperature on a metal and carbon based substrate

Abstract

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1417969
Patent Number(s):
9875894
Application Number:
14/563,201
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Dec 08
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sumant, Anirudha V., and Berman, Diana. Graphene layer formation at low substrate temperature on a metal and carbon based substrate. United States: N. p., 2018. Web.
Sumant, Anirudha V., & Berman, Diana. Graphene layer formation at low substrate temperature on a metal and carbon based substrate. United States.
Sumant, Anirudha V., and Berman, Diana. Tue . "Graphene layer formation at low substrate temperature on a metal and carbon based substrate". United States. https://www.osti.gov/servlets/purl/1417969.
@article{osti_1417969,
title = {Graphene layer formation at low substrate temperature on a metal and carbon based substrate},
author = {Sumant, Anirudha V. and Berman, Diana},
abstractNote = {A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {1}
}

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Works referenced in this record:

Energy Dissipation in Graphene Field-Effect Transistors
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Thermal stability and rehybridization of carbon bonding in tetrahedral amorphous carbon
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Low-temperature synthesis of large-area graphene-based transparent conductive films using surface wave plasma chemical vapor deposition
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Breakdown Current Density of CVD-Grown Multilayer Graphene Interconnects
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Synthesis, Characterization, and Properties of Large-Area Graphene Films
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100-GHz Transistors from Wafer-Scale Epitaxial Graphene
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Local Growth of Graphene by Ion Implantation of Carbon in a Nickel Thin Film followed by Rapid Thermal Annealing
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Electronics: Industry-compatible graphene transistors
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In Situ Characterization of Alloy Catalysts for Low-Temperature Graphene Growth
journal, October 2011


Introducing Carbon Diffusion Barriers for Uniform, High-Quality Graphene Growth from Solid Sources
journal, September 2013


Bilayer Graphene System: Current-Induced Reliability Limit
journal, October 2010


Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp2 -on-sp3 Technology
journal, February 2012