Graphene layer formation at low substrate temperature on a metal and carbon based substrate

Title: Graphene layer formation at low substrate temperature on a metal and carbon based substrate

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Inventors:: Sumant, Anirudha V.; Berman, Diana

Issue Date:: 2018-01-23

OSTI Identifier:: 1417969

Assignee:: UChicago Argonne, LLC (Chicago, IL) ANL

Patent Number(s):: 9,875,894

Application Number:: 14/563,201

Contract Number:: AC02-06CH11357

Resource Relation:: Patent File Date: 2014 Dec 08

Research Org:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

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Works referenced in this record:

Patterned thin film graphite devices and method for making same
patent, March 2006

DeHeer, Walt; Berger, Claire; First, Phillip
US Patent Document 7,015,142
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7015142

Devices with graphene layers
patent, August 2010

Garcia, Jorge; Pfeiffer, Loren
US Patent Document 7,781,061
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7781061

Method for generating graphene structures
patent, February 2014

Niyogi, Sandip; Barstow, Sean
US Patent Document 8,647,894
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8647894

Graphene layer formation on a carbon based substrate
patent, February 2014

Sumant, Anirudha; Balandin, Alexander
US Patent Document 8,652,946
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8652946

Graphene layer formation at low substrate temperature on a metal and carbon based substrate
patent, December 2014

Sumant, Anirudha
US Patent Document 8,906,772
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F8906772

Grahene hybrid material and method for preparing same using chemical vapor deposition
patent-application, February 2009

Lee, Jae; Lee, Seung; John, Phillip
US Patent Application 12/191801; 20090047520
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090047520%22.PGNR.&OS=DN/20090047520&RS=DN/20090047520

Graphene and hexagonal boron nitride planes and associated methods
patent-application, September 2010

Sung, Chien-Min; Hu, Shao; Lin, I-Chiao
US Patent Application 12/713004; 20100218801
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220100218801%22.PGNR.&OS=DN/20100218801&RS=DN/20100218801

Semiconductor substrates, devices and associated methods
patent-application, February 2011

Sung, Chien
US Patent Application 12/829270; 20110024767
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220110024767%22.PGNR.&OS=DN/20110024767&RS=DN/20110024767

Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
patent-application, March 2011

Caldwell, Joshua; Hobart, Karl; Anderson, Travis
US Patent Application 12/855692; 20110048625
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220110048625%22.PGNR.&OS=DN/20110048625&RS=DN/20110048625

Graphene formation utilizing solid phase carbon sources
patent-application, August 2011

Bol, Ageeth; Carruthers, Roy; Chu, Jack
US Patent Application 12/710333; 20110206934
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220110206934%22.PGNR.&OS=DN/20110206934&RS=DN/20110206934

Film on graphene on a substrate and method and devices therefor
patent-application, June 2012

Kub, Francis; Anderson, Travis; Mastro, Michael
US Patent Application 13/310347; 20120141799
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220120141799%22.PGNR.&OS=DN/20120141799&RS=DN/20120141799

Photodetector using a graphene thin film and nanoparticles, and method for producing the same
patent-application, June 2012

Kim, Tae-Whan; Jung, Jae-Hun; Son, Dong-Ick
US Patent Application 13/392176; 20120161106
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220120161106%22.PGNR.&OS=DN/20120161106&RS=DN/20120161106

Graphene on diamond devices and associated methods
patent-application, July 2012

Sung, Chien-Min
US Patent Application 13/343155; 20120181501
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220120181501%22.PGNR.&OS=DN/20120181501&RS=DN/20120181501

Method of fabricating a substrate having conductive through holes
patent-application, April 2013

Wei, Shih-Long; Hsiao, Shen-Li; Ho, Chien-Hung
US Patent Application 13/410482; 20130089982
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220130089982%22.PGNR.&OS=DN/20130089982&RS=DN/20130089982

Systems, devices, and/or methods for preparation of graphene and graphene hybrid composite via the pyrolysis of milled solid carbon sources
patent-application, May 2013

Nguyen, Khe
US Patent Application 13/290108; 20130116114
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220130116114%22.PGNR.&OS=DN/20130116114&RS=DN/20130116114

Method of manufacturing graphene substrate, and graphene substrate
patent-application, October 2013

Hiura, Hidefumi; Tsukagoshi, Kazuhito
US Patent Application 13/995809; 20130272951
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220130272951%22.PGNR.&OS=DN/20130272951&RS=DN/20130272951

Graphene layer formation at low substrate temperature on a metal and carbon based substrate
patent-application, October 2013

Sumant, Anirudha
US Patent Application 13/481110; 20130273723
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220130273723%22.PGNR.&OS=DN/20130273723&RS=DN/20130273723

Graphene shield enhanced photocathodes and methods for making the same
patent-application, November 2013

Moody, Nathan
US Patent Application 13/886517; 20130293100
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220130293100%22.PGNR.&OS=DN/20130293100&RS=DN/20130293100

Scalable multiple-inverse diffusion flame burner for synthesis and processing of carbon-based and other nanostructured materials and films and fuels
patent-application, February 2014

Tse, Stephen; Memon, Nasir; Kear, Bernard
US Patent Application 13/984397; 20140054505
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140054505%22.PGNR.&OS=DN/20140054505&RS=DN/20140054505

Method of forming high-quality graphene using continuous heat treatment chemical vapor deposition
patent-application, March 2014

Jeon, Seok-Woo; Lee, Jin-Sup; Oh, Se-Ran
US Patent Application 14/114689; 20140079623
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140079623%22.PGNR.&OS=DN/20140079623&RS=DN/20140079623

Direct growth of graphene films on non-catalyst surfaces
patent-application, May 2014

Tour, James; Yan, Zheng; Peng, Zhiwei
US Patent Application 14/113856; 20140120270
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140120270%22.PGNR.&OS=DN/20140120270&RS=DN/20140120270

Graphene layer formation on a carbon based substrate
patent-application, May 2014

Sumant, Anirudha; Balandin, Alexander
US Patent Application 14/167477; 20140147994
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140147994%22.PGNR.&OS=DN/20140147994&RS=DN/20140147994

Growth of graphene films and graphene patterns
patent-application, July 2014

Lu, Yongfeng; Xiong, Wei; Zhou, Yunshen
US Patent Application 14/161597; 20140205763
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140205763%22.PGNR.&OS=DN/20140205763&RS=DN/20140205763

Growth of graphene films from non-gaseous carbon sources
patent-application, August 2014

Tour, James; Sun, Zhengzong; Yan, Zheng
US Patent Application 13/561889; 20140234200
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140234200%22.PGNR.&OS=DN/20140234200&RS=DN/20140234200

Methods for low-temperature graphene precipitation onto glass, and associated articles/devices
patent-application, September 2014

Veerasamy, Vijayen
US Patent Application 14/145626; 20140261998
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140261998%22.PGNR.&OS=DN/20140261998&RS=DN/20140261998

Methods for direct production of graphene on dielectric substrates, and associated articles/devices
patent-application, October 2014

Veerasamy, Vijayen; Hart, Anastasios; McNerny, Daniel
US Patent Application 14/145585; 20140308523
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140308523%22.PGNR.&OS=DN/20140308523&RS=DN/20140308523

Method for manufacturing graphene and graphene manufactured by the same
patent-application, December 2014

Choi, Minseok; Kim, Taehyeong; Moon, Jinsan
US Patent Application 14/201274; 20140370295
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140370295%22.PGNR.&OS=DN/20140370295&RS=DN/20140370295

Graphene layer formation at low substrate temperature on a metal and carbon based substrate
patent-application, July 2015

Sumant, Anirudha; Diana, Diana
US Patent Application 14/563201; 20150206748
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220150206748%22.PGNR.&OS=DN/20150206748&RS=DN/20150206748

Local Growth of Graphene by Ion Implantation of Carbon in a Nickel Thin Film followed by Rapid Thermal Annealing
journal, January 2012

Mun, Jeong Hun; Lim, Sung Kyu; Cho, Byung Jin
Journal of The Electrochemical Society, Vol. 159, Issue 6, p. G89-G92
DOI: 10.1149/2.059206jes

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