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Title: Graphene layer formation at low substrate temperature on a metal and carbon based substrate

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
Inventors:
;
Issue Date:
OSTI Identifier:
1417969
Assignee:
UChicago Argonne, LLC (Chicago, IL) ANL
Patent Number(s):
9,875,894
Application Number:
14/563,201
Contract Number:
AC02-06CH11357
Resource Relation:
Patent File Date: 2014 Dec 08
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Local Growth of Graphene by Ion Implantation of Carbon in a Nickel Thin Film followed by Rapid Thermal Annealing
journal, January 2012
  • Mun, Jeong Hun; Lim, Sung Kyu; Cho, Byung Jin
  • Journal of The Electrochemical Society, Vol. 159, Issue 6, p. G89-G92
  • DOI: 10.1149/2.059206jes