Method for forming silver-copper mixed kesterite semiconductor film

Gershon, Talia S.; Gunawan, Oki; Lee, Yun S.; Mankad, Ravin

Advanced Search OptionsAdvanced Search queries use a traditional Term Search. For more info, see our FAQ.

All Fields:

Patent Title:

Abstract:

Assignee:

Inventor(s):

Patent Number:

Patent Classification (CPC):

All Classifications
A - human necessities
A01 - agriculture
A21 - baking
A22 - butchering
A23 - foods or foodstuffs
A24 - tobacco
A41 - wearing apparel
A42 - headwear
A43 - footwear
A44 - haberdashery
A45 - hand or travelling articles
A46 - brushware
A47 - furniture
A61 - medical or veterinary science
A62 - life-saving
A63 - sports
A99 - subject matter not otherwise provided for in this section
B - performing operations
B01 - physical or chemical processes or apparatus in general
B02 - crushing, pulverising, or disintegrating
B03 - separation of solid materials using liquids or using pneumatic tables or jigs
B04 - centrifugal apparatus or machines for carrying-out physical or chemical processes
B05 - spraying or atomising in general
B06 - generating or transmitting mechanical vibrations in general
B07 - separating solids from solids
B08 - cleaning
B09 - disposal of solid waste
B21 - mechanical metal-working without essentially removing material
B22 - casting
B23 - machine tools
B24 - grinding
B25 - hand tools
B26 - hand cutting tools
B27 - working or preserving wood or similar material
B28 - working cement, clay, or stone
B29 - working of plastics
B30 - presses
B31 - making articles of paper, cardboard or material worked in a manner analogous to paper
B32 - layered products
B33 - additive manufacturing technology
B41 - printing
B42 - bookbinding
B43 - writing or drawing implements
B44 - decorative arts
B60 - vehicles in general
B61 - railways
B62 - land vehicles for travelling otherwise than on rails
B63 - ships or other waterborne vessels
B64 - aircraft
B65 - conveying
B66 - hoisting
B67 - opening, closing {or cleaning} bottles, jars or similar containers
B68 - saddlery
B81 - microstructural technology
B82 - nanotechnology
B99 - subject matter not otherwise provided for in this section
C - chemistry
C01 - inorganic chemistry
C02 - treatment of water, waste water, sewage, or sludge
C03 - glass
C04 - cements
C05 - fertilisers
C06 - explosives
C07 - organic chemistry
C08 - organic macromolecular compounds
C09 - dyes
C10 - petroleum, gas or coke industries
C11 - animal or vegetable oils, fats, fatty substances or waxes
C12 - biochemistry
C13 - sugar industry
C14 - skins
C21 - metallurgy of iron
C22 - metallurgy
C23 - coating metallic material
C25 - electrolytic or electrophoretic processes
C30 - crystal growth
C40 - combinatorial technology
C99 - subject matter not otherwise provided for in this section
D - textiles
D01 - natural or man-made threads or fibres
D02 - yarns
D03 - weaving
D04 - braiding
D05 - sewing
D06 - treatment of textiles or the like
D07 - ropes
D10 - indexing scheme associated with sublasses of section d, relating to textiles
D21 - paper-making
D99 - subject matter not otherwise provided for in this section
E - fixed constructions
E01 - construction of roads, railways, or bridges
E02 - hydraulic engineering
E03 - water supply
E04 - building
E05 - locks
E06 - doors, windows, shutters, or roller blinds in general
E21 - earth drilling
E99 - subject matter not otherwise provided for in this section
F - mechanical engineering
F01 - machines or engines in general
F02 - combustion engines
F03 - machines or engines for liquids
F04 - positive - displacement machines for liquids
F05 - indexing schemes relating to engines or pumps in various subclasses of classes f01-f04
F15 - fluid-pressure actuators
F16 - engineering elements and units
F17 - storing or distributing gases or liquids
F21 - lighting
F22 - steam generation
F23 - combustion apparatus
F24 - heating
F25 - refrigeration or cooling
F26 - drying
F27 - furnaces
F28 - heat exchange in general
F41 - weapons
F42 - ammunition
F99 - subject matter not otherwise provided for in this section
G - physics
G01 - measuring
G02 - optics
G03 - photography
G04 - horology
G05 - controlling
G06 - computing
G07 - checking-devices
G08 - signalling
G09 - education
G10 - musical instruments
G11 - information storage
G12 - instrument details
G16 - information and communication technology [ict] specially adapted for specific application fields
G21 - nuclear physics
G99 - subject matter not otherwise provided for in this section
H - electricity
H01 - basic electric elements
H02 - generation
H03 - basic electronic circuitry
H04 - electric communication technique
H05 - electric techniques not otherwise provided for
H99 - subject matter not otherwise provided for in this section
Y - new / cross sectional technologies
Y02 - technologies or applications for mitigation or adaptation against climate change
Y04 - information or communication technologies having an impact on other technology areas
Y10 - technical subjects covered by former uspc

More Options ...

Title: Method for forming silver-copper mixed kesterite semiconductor film

Abstract

After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<1, and 0.ltoreq.y.ltoreq.1, on a substrate and forming a Ag layer on the Cu-deficient kesterite compound layer, the Cu-deficient kesterite compound layer and Ag layer are annealed in a S- and/or Se-rich ambient to provide a film containing a Ag--Cu mixed kesterite compound having the formula Ag.sub.xCu.sub.2-xZnSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<2, and 0.ltoreq.y.ltoreq.1.

Inventors:: Gershon, Talia S.; Gunawan, Oki; Lee, Yun S.; Mankad, Ravin

Issue Date:: 2018-01-23

Research Org.:: International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1417849

Patent Number(s):: 9876130

Application Number:: 15/336,427

Assignee:: International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/1864 - {Annealing}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Show less

DOE Contract Number:: EE0006334

Resource Type:: Patent

Resource Relation:: Patent File Date: 2016 Oct 27

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Gershon, Talia S., Gunawan, Oki, Lee, Yun S., and Mankad, Ravin. Method for forming silver-copper mixed kesterite semiconductor film.  United States: N. p., 2018. 
        Web.

Copy to clipboard


                    Gershon, Talia S., Gunawan, Oki, Lee, Yun S., & Mankad, Ravin. Method for forming silver-copper mixed kesterite semiconductor film.  United States.

Copy to clipboard


                    Gershon, Talia S., Gunawan, Oki, Lee, Yun S., and Mankad, Ravin. Tue .  
        "Method for forming silver-copper mixed kesterite semiconductor film".  United States.  https://www.osti.gov/servlets/purl/1417849.

Copy to clipboard


                    
@article{osti_1417849,

  title        = {Method for forming silver-copper mixed kesterite semiconductor film},

  author       = {Gershon, Talia S. and Gunawan, Oki and Lee, Yun S. and Mankad, Ravin},

  abstractNote = {After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<1, and 0.ltoreq.y.ltoreq.1, on a substrate and forming a Ag layer on the Cu-deficient kesterite compound layer, the Cu-deficient kesterite compound layer and Ag layer are annealed in a S- and/or Se-rich ambient to provide a film containing a Ag--Cu mixed kesterite compound having the formula Ag.sub.xCu.sub.2-xZnSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<2, and 0.ltoreq.y.ltoreq.1.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {1}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Capping layers for improved crystallization
patent, June 2016

Bag, Santanu; Barkhouse, David Aaron Randolph; Mitzi, David B.
US Patent Document 9,368,660
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9368660

Multi-Nary Group IB And Via Based Semiconductor
patent-application, July 2012

Jackrel, David B.; Dickey, Katherine; Pollock, Kristin
US Patent Application 13/208325; 20120168910
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20120168910

Multi-Nary Group IB and Via Based Semiconductor
patent-application, December 2012

Jackrel, David B.; Dickey, Katherine; Pollock, Kristin
US Patent Application 13/533761; 20120313200
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20120313200

Absorbers For High-Efficiency Thin-Film PV
patent-application, June 2013

Liang, Haifan; Van Duren, Jeroen
US Patent Application 13/596344; 20130164917
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20130164917

Techniques for Forming a Chalcogenide Thin Film Using Additive to a Liquid-Based Chalcogenide Precursor
patent-application, November 2013

Mitzi, David Brian; Qiu, Xiaofeng
US Patent Application 13/479856; 20130316519
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20130316519

Back Contact Substrate for a Photovoltaic Cell or Module
patent-application, March 2016

Urien, Mathieu; Palm, Jorg; Ruitenberg, Gerard
US Patent Application 14/888618; 20160064581
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20160064581

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (Ag_xCu_1-_x)₂ ZnSnSe₄
journal, March 2016

Gershon, Talia; Lee, Yun Seog; Antunez, Priscilla
Advanced Energy Materials, Vol. 6, Issue 10, Article No. 1502468
https://doi.org/10.1002/aenm.201502468

Similar Records in DOE Patents and OSTI.GOV collections:

Methods of forming semiconductor devices and devices formed using such methods

Patent Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between themore » particles and an electrode. « less
Full Text Available
Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

Patent Curtis, Calvin J [Lakewood, CO]; Miedaner, Alexander [Boulder, CO]; van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); ...

Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.
Full Text Available
Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

Patent Welch, James D [10328 Pinehurst Ave., Omaha, NE 68124]

Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasiticmore » « less
Full Text Available
Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

Patent Zhang, Ji-Guang [Golden, CO]; Tracy, C Edwin [Golden, CO]; Benson, David K [Golden, CO]; ...

A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursormore » « less
Full Text Available
Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

Patent Albin, David S.; Noufi, Rommel

Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.
Full Text Available

Similar Records

Title: Method for forming silver-copper mixed kesterite semiconductor film

Abstract

Citation Formats

Capping layers for improved crystallization patent, June 2016

Multi-Nary Group IB And Via Based Semiconductor patent-application, July 2012

Multi-Nary Group IB and Via Based Semiconductor patent-application, December 2012

Absorbers For High-Efficiency Thin-Film PV patent-application, June 2013

Techniques for Forming a Chalcogenide Thin Film Using Additive to a Liquid-Based Chalcogenide Precursor patent-application, November 2013

Back Contact Substrate for a Photovoltaic Cell or Module patent-application, March 2016

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1-x)2 ZnSnSe4 journal, March 2016

Capping layers for improved crystallization
patent, June 2016

Multi-Nary Group IB And Via Based Semiconductor
patent-application, July 2012

Multi-Nary Group IB and Via Based Semiconductor
patent-application, December 2012

Absorbers For High-Efficiency Thin-Film PV
patent-application, June 2013

Techniques for Forming a Chalcogenide Thin Film Using Additive to a Liquid-Based Chalcogenide Precursor
patent-application, November 2013

Back Contact Substrate for a Photovoltaic Cell or Module
patent-application, March 2016

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (Ag_xCu_1-_x)₂ ZnSnSe₄
journal, March 2016