Method for forming silver-copper mixed kesterite semiconductor film

Gershon, Talia S.; Gunawan, Oki; Lee, Yun S.; Mankad, Ravin

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Title: Method for forming silver-copper mixed kesterite semiconductor film

Abstract

After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<1, and 0.ltoreq.y.ltoreq.1, on a substrate and forming a Ag layer on the Cu-deficient kesterite compound layer, the Cu-deficient kesterite compound layer and Ag layer are annealed in a S- and/or Se-rich ambient to provide a film containing a Ag--Cu mixed kesterite compound having the formula Ag.sub.xCu.sub.2-xZnSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<2, and 0.ltoreq.y.ltoreq.1.

Inventors:: Gershon, Talia S.; Gunawan, Oki; Lee, Yun S.; Mankad, Ravin

Issue Date:: 2018-01-23

Research Org.:: International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1417849

Patent Number(s):: 9876130

Application Number:: 15/336,427

Assignee:: International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}
H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/1864 - {Annealing}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: EE0006334

Resource Type:: Patent

Resource Relation:: Patent File Date: 2016 Oct 27

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Gershon, Talia S., Gunawan, Oki, Lee, Yun S., and Mankad, Ravin. Method for forming silver-copper mixed kesterite semiconductor film.  United States: N. p., 2018. 
        Web.

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                    Gershon, Talia S., Gunawan, Oki, Lee, Yun S., & Mankad, Ravin. Method for forming silver-copper mixed kesterite semiconductor film.  United States.

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                    Gershon, Talia S., Gunawan, Oki, Lee, Yun S., and Mankad, Ravin. Tue .  
        "Method for forming silver-copper mixed kesterite semiconductor film".  United States.  https://www.osti.gov/servlets/purl/1417849.

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@article{osti_1417849,

  title        = {Method for forming silver-copper mixed kesterite semiconductor film},

  author       = {Gershon, Talia S. and Gunawan, Oki and Lee, Yun S. and Mankad, Ravin},

  abstractNote = {After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<1, and 0.ltoreq.y.ltoreq.1, on a substrate and forming a Ag layer on the Cu-deficient kesterite compound layer, the Cu-deficient kesterite compound layer and Ag layer are annealed in a S- and/or Se-rich ambient to provide a film containing a Ag--Cu mixed kesterite compound having the formula Ag.sub.xCu.sub.2-xZnSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<2, and 0.ltoreq.y.ltoreq.1.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2018},

  month        = {1}

}

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Works referenced in this record:

Capping layers for improved crystallization
patent, June 2016

Bag, Santanu; Barkhouse, David Aaron Randolph; Mitzi, David B.
US Patent Document 9,368,660
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Multi-Nary Group IB And Via Based Semiconductor
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Multi-Nary Group IB and Via Based Semiconductor
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Jackrel, David B.; Dickey, Katherine; Pollock, Kristin
US Patent Application 13/533761; 20120313200
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Absorbers For High-Efficiency Thin-Film PV
patent-application, June 2013

Liang, Haifan; Van Duren, Jeroen
US Patent Application 13/596344; 20130164917
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Techniques for Forming a Chalcogenide Thin Film Using Additive to a Liquid-Based Chalcogenide Precursor
patent-application, November 2013

Mitzi, David Brian; Qiu, Xiaofeng
US Patent Application 13/479856; 20130316519
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Back Contact Substrate for a Photovoltaic Cell or Module
patent-application, March 2016

Urien, Mathieu; Palm, Jorg; Ruitenberg, Gerard
US Patent Application 14/888618; 20160064581
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Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (Ag_xCu_1-_x)₂ ZnSnSe₄
journal, March 2016

Gershon, Talia; Lee, Yun Seog; Antunez, Priscilla
Advanced Energy Materials, Vol. 6, Issue 10, Article No. 1502468
https://doi.org/10.1002/aenm.201502468

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Similar Records

Title: Method for forming silver-copper mixed kesterite semiconductor film

Abstract

Citation Formats

Capping layers for improved crystallization patent, June 2016

Multi-Nary Group IB And Via Based Semiconductor patent-application, July 2012

Multi-Nary Group IB and Via Based Semiconductor patent-application, December 2012

Absorbers For High-Efficiency Thin-Film PV patent-application, June 2013

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Back Contact Substrate for a Photovoltaic Cell or Module patent-application, March 2016

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1-x)2 ZnSnSe4 journal, March 2016

Capping layers for improved crystallization
patent, June 2016

Multi-Nary Group IB And Via Based Semiconductor
patent-application, July 2012

Multi-Nary Group IB and Via Based Semiconductor
patent-application, December 2012

Absorbers For High-Efficiency Thin-Film PV
patent-application, June 2013

Techniques for Forming a Chalcogenide Thin Film Using Additive to a Liquid-Based Chalcogenide Precursor
patent-application, November 2013

Back Contact Substrate for a Photovoltaic Cell or Module
patent-application, March 2016

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (Ag_xCu_1-_x)₂ ZnSnSe₄
journal, March 2016