Method for forming silver-copper mixed kesterite semiconductor film
Abstract
After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<1, and 0.ltoreq.y.ltoreq.1, on a substrate and forming a Ag layer on the Cu-deficient kesterite compound layer, the Cu-deficient kesterite compound layer and Ag layer are annealed in a S- and/or Se-rich ambient to provide a film containing a Ag--Cu mixed kesterite compound having the formula Ag.sub.xCu.sub.2-xZnSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<2, and 0.ltoreq.y.ltoreq.1.
- Inventors:
- Issue Date:
- Research Org.:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1417849
- Patent Number(s):
- 9876130
- Application Number:
- 15/336,427
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EE0006334
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Oct 27
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Gershon, Talia S., Gunawan, Oki, Lee, Yun S., and Mankad, Ravin. Method for forming silver-copper mixed kesterite semiconductor film. United States: N. p., 2018.
Web.
Gershon, Talia S., Gunawan, Oki, Lee, Yun S., & Mankad, Ravin. Method for forming silver-copper mixed kesterite semiconductor film. United States.
Gershon, Talia S., Gunawan, Oki, Lee, Yun S., and Mankad, Ravin. Tue .
"Method for forming silver-copper mixed kesterite semiconductor film". United States. https://www.osti.gov/servlets/purl/1417849.
@article{osti_1417849,
title = {Method for forming silver-copper mixed kesterite semiconductor film},
author = {Gershon, Talia S. and Gunawan, Oki and Lee, Yun S. and Mankad, Ravin},
abstractNote = {After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<1, and 0.ltoreq.y.ltoreq.1, on a substrate and forming a Ag layer on the Cu-deficient kesterite compound layer, the Cu-deficient kesterite compound layer and Ag layer are annealed in a S- and/or Se-rich ambient to provide a film containing a Ag--Cu mixed kesterite compound having the formula Ag.sub.xCu.sub.2-xZnSn(S.sub.ySe.sub.1-y).sub.4, wherein 0<2, and 0.ltoreq.y.ltoreq.1.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {1}
}
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