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Title: Silicon-embedded copper nanostructure network for high energy storage

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.
Inventors:
Issue Date:
OSTI Identifier:
1417847
Assignee:
Amprius, Inc. (Sunnyvale, CA) DOEEE
Patent Number(s):
9,876,224
Application Number:
15/068,388
Contract Number:
EE0005474
Resource Relation:
Patent File Date: 2016 Mar 11
Research Org:
Amprius, Inc., Sunnyvale, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 25 ENERGY STORAGE