Global to push GA events into
skip to main content

Title: Coated substrate apparatus and method

A coated substrate is formed with aligned objects such as small molecules, macromolecules and nanoscale particulates, such as inorganic, organic or inorganic/organic hybrid materials. In accordance with one or more embodiments, an apparatus or method involves an applicator having at least one surface patterned with protruded or indented features, and a coated substrate including a solution-based layer of objects having features and morphology attributes arranged as a function of the protruded or indented features.
Inventors:
; ; ; ; ;
Issue Date:
OSTI Identifier:
1416353
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Stanford, CA) SLAC
Patent Number(s):
9,863,057
Application Number:
14/263,864
Contract Number:
AC02-76SF00515
Resource Relation:
Patent File Date: 2014 Apr 28
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Confinement of molecular liquids: Consequences on thermodynamic, static and dynamical properties of benzene and toluene
journal, September 2003
  • Alba-Simionesco, C.; Dosseh, G.; Dumont, E.
  • The European Physical Journal E, Vol. 12, Issue 1, p. 19-28
  • DOI: 10.1140/epje/i2003-10055-1

High‐Performance Organic Thin‐Film Transistors through Solution‐Sheared Deposition of Small‐Molecule Organic Semiconductors
journal, July 2008
  • Becerril, Héctor A.; Roberts, Mark E.; Liu, Zihong
  • Advanced Materials, Vol. 20, Issue 13, p. 2588-2594
  • DOI: 10.1002/adma.200703120

Capillary flow as the cause of ring stains from dried liquid drops
journal, October 1997
  • Deegan, Robert D.; Bakajin, Olgica; Dupont, Todd F.
  • Nature, Vol. 389, Issue 6653, p. 827-829
  • DOI: 10.1038/39827

Tuning charge transport in solution-sheared organic semiconductors using lattice strain
journal, December 2011
  • Giri, Gaurav; Verploegen, Eric; Mannsfeld, Stefan C. B.
  • Nature, Vol. 480, Issue 7378, p. 504-508
  • DOI: 10.1038/nature10683

Organic Single-Crystal Arrays from Solution-Phase Growth Using Micropattern with Nucleation Control Region
journal, January 2012
  • Goto, Osamu; Tomiya, Shigetaka; Murakami, Yosuke
  • Advanced Materials, Vol. 24, Issue 8, p. 1117-1122
  • DOI: 10.1002/adma.201104373

Polymorph Selectivity under Nanoscopic Confinement
journal, March 2004
  • Ha, Jeong-Myeong; Wolf, Johanna H.; Hillmyer, Marc A.
  • Journal of the American Chemical Society, Vol. 126, Issue 11, p. 3382-3383
  • DOI: 10.1021/ja049724r

High-Performance Transistors and Complementary Inverters Based on Solution-Grown Aligned Organic Single-Crystals
journal, March 2012
  • Li, Hanying; Tee, Benjamin C.-K.; Giri, Gaurav
  • Advanced Materials, Vol. 24, Issue 19, p. 2588-2591
  • DOI: 10.1002/adma.201200151

Selective Crystallization of Organic Semiconductors on Patterned Templates of Carbon Nanotubes
journal, October 2007
  • Liu, S.; Briseno, A. L.; Mannsfeld, S. C. B.
  • Advanced Functional Materials, Vol. 17, Issue 15, p. 2891-2896
  • DOI: 10.1002/adfm.200700484

Thin Film Structure of Triisopropylsilylethynyl-Functionalized Pentacene and Tetraceno[2,3-b]thiophene from Grazing Incidence X-Ray Diffraction
journal, November 2010
  • Mannsfeld, Stefan C. B.; Tang, Ming Lee; Bao, Zhenan
  • Advanced Materials, Vol. 23, Issue 1, p. 127-131
  • DOI: 10.1002/adma.201003135

A Zone-Casting Technique for Device Fabrication of Field-Effect Transistors Based on Discotic Hexa-peri-hexabenzocoronene
journal, January 2005
  • Pisula, W.; Menon, A.; Stepputat, M.
  • Advanced Materials, Vol. 17, Issue 6, p. 684-689
  • DOI: 10.1002/adma.200401171

Organic single-crystal field-effect transistors
journal, March 2007

Controlled Deposition of Highly Ordered Soluble Acene Thin Films: Effect of Morphology and Crystal Orientation on Transistor Performance
journal, September 2009
  • Sele, Christoph W.; Kjellander, B. K. Charlotte; Niesen, Bjoern
  • Advanced Materials, Vol. 21, Issue 48, p. 4926-4931
  • DOI: 10.1002/adma.200901548