Title: Nanocrystal thin film fabrication methods and apparatus

Abstract

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Inventors:

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

Issue Date:

2018-01-09

Research Org.:

Univ. of Pennsylvania, Philadelphia, PA (United States)

Sponsoring Org.:

USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

OSTI Identifier:

1416328

Patent Number(s):

9865465

Application Number:

14/761,799

Assignee:

The Trustees Of The University Of Pennsylvania (Philadelphia, PA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/30604 - {Chemical etching}
H01L29/22 - including, apart from doping materials or other impurities, only AIIBVI compounds
H01L29/0665 - {the shape of the body defining a nanostructure
H01L21/02628 - {using solutions}
H01L29/78681 - {having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/36 - characterised by the concentration or distribution of impurities {in the bulk material
H01L21/225 - using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer {
H01L29/66969 - {of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
H01L21/0256 - {Selenides}

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DOE Contract Number:  

SC0002158

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Jan 17

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE