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Title: Micro-balance sensor integrated with atomic layer deposition chamber

The invention is directed to QCM measurements in monitoring ALD processes. Previously, significant barriers remain in the ALD processes and accurate execution. To turn this exclusively dedicated in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of ALD tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the feasibility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1415625
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL) ANL
Patent Number(s):
9,856,563
Application Number:
13/591,498
Contract Number:
AC02-06CH11357
Resource Relation:
Patent File Date: 2012 Aug 22
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Other works cited in this record:

Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry
journal, January 2000

In situ characterization of ALE growth by reagent pulse delay times in a flow-type reactor
journal, January 1994

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