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Title: Methods for producing thin film charge selective transport layers


Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

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Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
OSTI Identifier:
Patent Number(s):
Application Number:
Alliance for Sustainable Energy, LLC (Golden, CO); SolarWindow Technologies, Inc. (Columbia, MD)
DOE Contract Number:  
Resource Type:
Resource Relation:
Patent File Date: 2014 Mar 07
Country of Publication:
United States

Citation Formats

Hammond, Scott Ryan, Olson, Dana C., and van Hest, Marinus Franciscus Antonius Maria. Methods for producing thin film charge selective transport layers. United States: N. p., 2018. Web.
Hammond, Scott Ryan, Olson, Dana C., & van Hest, Marinus Franciscus Antonius Maria. Methods for producing thin film charge selective transport layers. United States.
Hammond, Scott Ryan, Olson, Dana C., and van Hest, Marinus Franciscus Antonius Maria. Tue . "Methods for producing thin film charge selective transport layers". United States.
title = {Methods for producing thin film charge selective transport layers},
author = {Hammond, Scott Ryan and Olson, Dana C. and van Hest, Marinus Franciscus Antonius Maria},
abstractNote = {Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {1}


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