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Title: Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.
Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
1414940
Assignee:
Old Dominion University Research Foundation (Norfolk, VA) OSTI
Patent Number(s):
9,852,891
Application Number:
14/688,363
Resource Relation:
Patent File Date: 2015 Apr 16
Research Org:
Old Dominion University Research Foundation, Norfolk, VA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

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