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Title: Ultrananocrystalline diamond contacts for electronic devices

A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.
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Issue Date:
OSTI Identifier:
UChicago Argonne, LLC (Chicago, IL); Brookhaven Science Associates, LLC (Upton, NY); The Research Foundation for the State University of New York (Albany, NY) BNL
Patent Number(s):
Application Number:
Contract Number:
AC02-98CH10886; SC0012704; AC02-06CH11357
Resource Relation:
Patent File Date: 2016 Oct 31
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
Country of Publication:
United States

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