Ion-barrier for memristors/ReRAM and methods thereof

Haase, Gad S.

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Title: Ion-barrier for memristors/ReRAM and methods thereof

Abstract

The present invention relates to memristive devices including a resistance-switching element and a barrier element. In particular examples, the barrier element is a monolayer of a transition metal chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions out of the switching element. As the location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. Other types of barrier elements, as well as methods for forming such elements, are described herein.

Inventors:: Haase, Gad S.

Issue Date:: 2017-11-28

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1410528

Patent Number(s):: 9831427

Application Number:: 14/829,440

Assignee:: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Aug 18

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats


                    Haase, Gad S. Ion-barrier for memristors/ReRAM and methods thereof.  United States: N. p., 2017. 
        Web.

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                    Haase, Gad S. Ion-barrier for memristors/ReRAM and methods thereof.  United States.

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                    Haase, Gad S. Tue .  
        "Ion-barrier for memristors/ReRAM and methods thereof".  United States.  https://www.osti.gov/servlets/purl/1410528.

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@article{osti_1410528,

  title        = {Ion-barrier for memristors/ReRAM and methods thereof},

  author       = {Haase, Gad S.},

  abstractNote = {The present invention relates to memristive devices including a resistance-switching element and a barrier element. In particular examples, the barrier element is a monolayer of a transition metal chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions out of the switching element. As the location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. Other types of barrier elements, as well as methods for forming such elements, are described herein.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2017},

  month        = {11}

}

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Works referenced in this record:

Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film
patent, October 2006

Avanzino, Steven C.; Tran, Minh Quoc
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Similar Records

Title: Ion-barrier for memristors/ReRAM and methods thereof

Abstract

Citation Formats

Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film patent, October 2006

Memristors with a switching layer comprising a composite of multiple phases patent, April 2013

Controlled placement of dopants in memristor active regions patent, June 2013

Memristive device patent, November 2013

Superconductor Memristor Devices patent-application, November 2011

Method Of Forming A Chalcogenide Material, Methods Of Forming A Resistive Random Access Memory Device Including A Chalcogenide Material, And Random Access Memory Devices Including A Chalcogenide Material patent-application, May 2012

Nonvolatile Resistive Memory Element With An Integrated Oxygen Isolation Structure patent-application, August 2013

Low Energy Memristors With Engineered Switching Channel Materials patent-application, April 2014

MoOx-Based Resistance Switching Materials patent-application, July 2014

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets journal, April 2013

The group IV di-transition metal sulfides and selenides journal, December 1967

New ternary and quaternary transition-metal selenides: Syntheses and characterization journal, March 1985

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures journal, July 2011

Electrically tailored resistance switching in silicon oxide journal, October 2012

Polytypes and crystallinity of ultrathin epitaxial films of layered materials studied with grazing incidence X-ray diffraction journal, December 1996

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides journal, November 2012

Synthetic Fabrication of Nanoscale MoS2-Based Transition Metal Sulfides journal, January 2010

Low temperature synthesis of transition metal sulfides journal, January 1992

Metal–Oxide RRAM journal, June 2012

Memristive devices for computing journal, January 2013

Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film
patent, October 2006

Memristors with a switching layer comprising a composite of multiple phases
patent, April 2013

Controlled placement of dopants in memristor active regions
patent, June 2013

Memristive device
patent, November 2013

Superconductor Memristor Devices
patent-application, November 2011

Method Of Forming A Chalcogenide Material, Methods Of Forming A Resistive Random Access Memory Device Including A Chalcogenide Material, And Random Access Memory Devices Including A Chalcogenide Material
patent-application, May 2012

Nonvolatile Resistive Memory Element With An Integrated Oxygen Isolation Structure
patent-application, August 2013

Low Energy Memristors With Engineered Switching Channel Materials
patent-application, April 2014

MoOx-Based Resistance Switching Materials
patent-application, July 2014

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013

The group IV di-transition metal sulfides and selenides
journal, December 1967

New ternary and quaternary transition-metal selenides: Syntheses and characterization
journal, March 1985

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta₂O_5−x/TaO_2−x bilayer structures
journal, July 2011

Electrically tailored resistance switching in silicon oxide
journal, October 2012

Polytypes and crystallinity of ultrathin epitaxial films of layered materials studied with grazing incidence X-ray diffraction
journal, December 1996

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

Synthetic Fabrication of Nanoscale MoS₂-Based Transition Metal Sulfides
journal, January 2010

Low temperature synthesis of transition metal sulfides
journal, January 1992

Metal–Oxide RRAM
journal, June 2012

Memristive devices for computing
journal, January 2013