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Title: Electroabsorption optical modulator

An electroabsorption modulator incorporates waveguiding regions along the length of the modulator that include quantum wells where at least two of the regions have quantum wells with different bandgaps. In one embodiment of the invention, the regions are arranged such that the quantum wells have bandgaps with decreasing bandgap energy along the length of the modulator from the modulator's input to its output. The bandgap energy of the quantum wells may be decreased in discrete steps or continuously. Advantageously, such an arrangement better distributes the optical absorption as well as the carrier density along the length of the modulator. Further advantageously, the modulator may handle increased optical power as compared with prior art modulators of similar dimensions, which allows for improved link gain when the optical modulator is used in an analog optical communication link.
Issue Date:
OSTI Identifier:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM) SNL-A
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2016 Apr 11
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
Country of Publication:
United States

Other works cited in this record:

Optical NAND gate
patent, August 2011

Variable bandgap modulator for a modulated laser system
patent, February 2015

Electro-absorption modulator
patent-application, May 2005

Electro-absorptive optical modulator module having monolithic integrated photo detector
patent-application, June 2005

Electro-absorption semiconductor optical modulator
patent-application, May 2008

40-Gb/s Widely Tunable Transceivers
journal, January 2007
  • Raring, James W.; Coldren, Larry A.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 13, Issue 1, p. 3-14
  • DOI: 10.1109/JSTQE.2006.885329

Monolithically integrated active components: a quantum-well intermixing approach
journal, March 2005
  • Skogen, E. J.; Raring, J. W.; Morrison, G. B.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 11, Issue 2, p. 343-355
  • DOI: 10.1109/JSTQE.2005.846525

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