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Title: High throughput semiconductor deposition system

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.
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Issue Date:
OSTI Identifier:
Alliance for Sustainable Energy, LLC (Golden, CO); Wisconsin Alumni Research Foundation (Madison, WI) NREL
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2015 Jul 16
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

Gallium Contamination of InP Epitaxial Layers in InP∕InGaAsP Multilayer Structures Grown by Hydride Transport Vapor Phase Epitaxy
journal, January 1985
  • Chu, S. N. G.; Stevie, F. A.; Macrander, A. T.
  • Journal of The Electrochemical Society, Vol. 132, Issue 5, p. 1187-1193
  • DOI: 10.1149/1.2114056

Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies
journal, March 1978
  • Fan, John C. C.; Bozler, Carl O.; Chapman, Ralph L.
  • Applied Physics Letters, Vol. 32, Issue 6, p. 390-392
  • DOI: 10.1063/1.90065

40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
journal, September 2008
  • Geisz, J. F.; Friedman, D. J.; Ward, J. S.
  • Applied Physics Letters, Vol. 93, Issue 12, Article No. 123505
  • DOI: 10.1063/1.2988497

Hydride vapor phase epitaxy revisited
journal, June 1997
  • Lourdudoss, S.; Kjebon, O.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3, Issue 3, p. 749-767
  • DOI: 10.1109/2944.640630

Thin film approaches for high-efficiency III–V cells
journal, May 1991

Hydride VPE growth technique for InP/GaInAsP system
journal, March 1989

Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique
journal, January 1981

Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs
journal, August 2012

Continuous Growth of High Purity InP/InGaAs on InP Substrate by Vapor Phase Epitaxy
journal, April 1981
  • Susa, Nobuhiko; Yamauchi, Yoshiharu; Kanbe, Hiroshi
  • Japanese Journal of Applied Physics, Vol. 20, Issue 4, p. L253-L256
  • DOI: 10.1143/JJAP.20.L253

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
journal, December 2007
  • Wong, Man Hoi; Pei, Yi; Palacios, Tomás
  • Applied Physics Letters, Vol. 91, Issue 23, Article No. 232103
  • DOI: 10.1063/1.2820381