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Title: High throughput semiconductor deposition system

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.
Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
1409831
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO); Wisconsin Alumni Research Foundation (Madison, WI) NREL
Patent Number(s):
9,824,890
Application Number:
14/801,551
Contract Number:
AC36-08GO28308
Resource Relation:
Patent File Date: 2015 Jul 16
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source
patent, March 1985

Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
patent, March 2004

Continuous Feed Chemical Vapor Deposition System
patent-application, December 2010

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