Title: Method of making thermally-isolated silicon-based integrated circuits

Abstract

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Inventors:

Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.; Bauer, Todd

Issue Date:

Tue Nov 21 00:00:00 EST 2017

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1409829

Patent Number(s):

9824932

Application Number:

15/234,932

Assignee:

National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81B - MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81B - MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES

B81B2203/0118 - Cantilevers
B81B7/0083 - {Temperature control}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02178 - {the material containing aluminium, e.g. Al2O3}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02592 - {amorphous}
H01L21/30604 - {Chemical etching}
H01L21/31111 - {by chemical means}
H01L21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L21/762 - Dielectric regions {, e.g. EPIC dielectric isolation, LOCOS
H01L21/764 - Air gaps {
H01L21/823481 - {isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure}
H01L21/84 - the substrate being other than a semiconductor body, e.g. being an insulating body
H01L23/34 - Arrangements for cooling, heating, ventilating or temperature compensation {
H01L27/12 - the substrate being other than a semiconductor body, e.g. an insulating body
H01L29/0649 - {Dielectric regions, e.g. SiO2 regions, air gaps}

H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03H - IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS

H03H2009/02181 - {by application of heat from a heat source}
H03H3/02 - for the manufacture of piezo-electric or electrostrictive resonators or networks

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Aug 11

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 42 ENGINEERING