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Title: Methods for top-down fabrication of wafer scale TMDC monolayers

A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1407949
Assignee:
UChicago Argonne, LLC ANL
Patent Number(s):
9,809,903
Application Number:
15/061,696
Contract Number:
AC02-06CH11357
Resource Relation:
Patent File Date: 2016 Mar 04
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Other works cited in this record:

Process to Produce Atomically Thin Crystals and Films
patent-application, November 2013

Novel Growth Methods For Controlled Large-Area Fabrication Of High-Quality Graphene Analogs
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Novel Process For Scalable Synthesis Of Molybdenum Disulfide Monolayer And Few-Layer Films
patent-application, December 2014

Scalable 2D-Film CVD Synthesis
patent-application, May 2015

Spontaneous exfoliation and tailoring of MoS2 in mixed solvents
journal, January 2014
  • Dong, Lei; Lin, Shan; Yang, Liu
  • Chem. Commun., Vol. 50, Issue 100, p. 15936-15939
  • DOI: 10.1039/C4CC07238C

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