Thermal emitter comprising near-zero permittivity materials
Abstract
A novel thermal source comprising a semiconductor hyperbolic metamaterial provides control of the emission spectrum and the angular emission pattern. These properties arise because of epsilon-near-zero conditions in the semiconductor hyperbolic metamaterial. In particular, the thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the semiconductor hyperbolic metamaterial. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1404708
- Patent Number(s):
- 9799798
- Application Number:
- 15/379,786
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Dec 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE
Citation Formats
Luk, Ting S., Campione, Salvatore, and Sinclair, Michael B. Thermal emitter comprising near-zero permittivity materials. United States: N. p., 2017.
Web.
Luk, Ting S., Campione, Salvatore, & Sinclair, Michael B. Thermal emitter comprising near-zero permittivity materials. United States.
Luk, Ting S., Campione, Salvatore, and Sinclair, Michael B. Wed .
"Thermal emitter comprising near-zero permittivity materials". United States. https://www.osti.gov/servlets/purl/1404708.
@article{osti_1404708,
title = {Thermal emitter comprising near-zero permittivity materials},
author = {Luk, Ting S. and Campione, Salvatore and Sinclair, Michael B.},
abstractNote = {A novel thermal source comprising a semiconductor hyperbolic metamaterial provides control of the emission spectrum and the angular emission pattern. These properties arise because of epsilon-near-zero conditions in the semiconductor hyperbolic metamaterial. In particular, the thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the semiconductor hyperbolic metamaterial. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {10}
}
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