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Title: Precise annealing of focal plane arrays for optical detection

Precise annealing of identified defective regions of a Focal Plane Array ("FPA") (e.g., exclusive of non-defective regions of the FPA) facilitates removal of defects from an FPA that has been hybridized and/or packaged with readout electronics. Radiation is optionally applied under operating conditions, such as under cryogenic temperatures, such that performance of an FPA can be evaluated before, during, and after annealing without requiring thermal cycling.
Inventors:
Issue Date:
OSTI Identifier:
1399862
Assignee:
National Technology & Engineering Solutions of Sandia, LLC SNL-A
Patent Number(s):
9,793,177
Application Number:
14/824,621
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2015 Aug 12
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 36 MATERIALS SCIENCE

Works referenced in this record:

Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation
journal, March 2007
  • Yan, Jiwang; Asami, Tooru; Kuriyagawa, Tsunemoto
  • Semiconductor Science and Technology, Vol. 22, Issue 4, p. 392-395
  • DOI: 10.1088/0268-1242/22/4/016