Silicon-based visible and near-infrared optoelectric devices
Abstract
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.
- Inventors:
- Issue Date:
- Research Org.:
- Harvard Univ., Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1399782
- Patent Number(s):
- 9793425
- Application Number:
- 15/003,210
- Assignee:
- President And Fellows Of Harvard College
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- FC36-01GO11051
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Jan 21
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Mazur, Eric, and Carey, James Edward. Silicon-based visible and near-infrared optoelectric devices. United States: N. p., 2017.
Web.
Mazur, Eric, & Carey, James Edward. Silicon-based visible and near-infrared optoelectric devices. United States.
Mazur, Eric, and Carey, James Edward. Tue .
"Silicon-based visible and near-infrared optoelectric devices". United States. https://www.osti.gov/servlets/purl/1399782.
@article{osti_1399782,
title = {Silicon-based visible and near-infrared optoelectric devices},
author = {Mazur, Eric and Carey, James Edward},
abstractNote = {In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {10}
}
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