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Title: Silicon-based visible and near-infrared optoelectric devices

Abstract

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Inventors:
;
Issue Date:
Research Org.:
President And Fellows Of Harvard College, Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1399782
Patent Number(s):
9,793,425
Application Number:
15/003,210
Assignee:
President And Fellows Of Harvard College
DOE Contract Number:  
FC36-01GO11051
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jan 21
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Mazur, Eric, and Carey, James Edward. Silicon-based visible and near-infrared optoelectric devices. United States: N. p., 2017. Web.
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Mazur, Eric, & Carey, James Edward. Silicon-based visible and near-infrared optoelectric devices. United States.
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Mazur, Eric, and Carey, James Edward. Tue . "Silicon-based visible and near-infrared optoelectric devices". United States. https://www.osti.gov/servlets/purl/1399782.
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@article{osti_1399782,
title = {Silicon-based visible and near-infrared optoelectric devices},
author = {Mazur, Eric and Carey, James Edward},
abstractNote = {In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {10}
}
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Works referenced in this record:

Glass-Based SOI Structures
patent-application, August 2010

Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon
journal, March 2004

  • Crouch, C. H.; Carey, J. E.; Warrender, J. M.
  • Applied Physics Letters, Vol. 84, Issue 11, p. 1850-1852
  • DOI: 10.1063/1.1667004

Surface microstructuring and long-range ordering of silicon nanoparticles
journal, May 2002

  • Fowlkes, J. D.; Pedraza, A. J.; Blom, D. A.
  • Applied Physics Letters, Vol. 80, Issue 20, p. 3799-3801
  • DOI: 10.1063/1.1480106

Microstructuring of silicon with femtosecond laser pulses
journal, September 1998

  • Her, Tsing-Hua; Finlay, Richard J.; Wu, Claudia
  • Applied Physics Letters, Vol. 73, Issue 12, p. 1673-1675
  • DOI: 10.1063/1.122241

Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiation
journal, April 1999

  • Pedraza, A. J.; Fowlkes, J. D.; Lowndes, D. H.
  • Applied Physics Letters, Vol. 74, Issue 16, p. 2322-2324
  • DOI: 10.1063/1.123838

Whiskerlike structure growth on silicon exposed to ArF excimer laser irradiation
journal, July 1996

  • Sánchez, F.; Morenza, J. L.; Aguiar, R.
  • Applied Physics Letters, Vol. 69, Issue 5, p. 620-622
  • DOI: 10.1063/1.117926

Temperature dependence of photoluminescence in noncrystalline silicon
conference, June 2004

  • Serpenguzel, Ali; Bilici, Temel; Inanc, Ibrahim
  • Integrated Optoelectronic Devices 2004: Proceedings Volume 5349, Physics and Simulation of Optoelectronic Devices XII, Vol. 5349
  • DOI: 10.1117/12.529549

Formation of regular arrays of silicon microspikes by femtosecond laser irradiation through a mask
journal, March 2003

  • Shen, M. Y.; Crouch, C. H.; Carey, J. E.
  • Applied Physics Letters, Vol. 82, Issue 11, p. 1715-1717
  • DOI: 10.1063/1.1561162

Near-unity below-band-gap absorption by microstructured silicon
journal, March 2001

  • Wu, C.; Crouch, C. H.; Zhao, L.
  • Applied Physics Letters, Vol. 78, Issue 13, p. 1850-1852
  • DOI: 10.1063/1.1358846

Visible luminescence from silicon surfaces microstructured in air
journal, September 2002

  • Wu, C.; Crouch, C. H.; Zhao, L.
  • Applied Physics Letters, Vol. 81, Issue 11, p. 1999-2001
  • DOI: 10.1063/1.1504868

Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulses
journal, March 2003

  • Younkin, R.; Carey, J. E.; Mazur, E.
  • Journal of Applied Physics, Vol. 93, Issue 5, p. 2626-2629
  • DOI: 10.1063/1.1545159
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