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Title: Skyrmion based universal memory operated by electric current

A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.
Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
1399095
Assignee:
THE JOHNS HOPKINS UNIVERSITY CHO
Patent Number(s):
9,773,540
Application Number:
15/213,019
Contract Number:
FG02-08ER46544
Resource Relation:
Patent File Date: 2016 Jul 18
Research Org:
THE JOHNS HOPKINS UNIVERSITY, Baltimore, MD (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Magnetic memory devices and systems
patent-application, October 2011

Magnetic memory devices and systems
patent-application, November 2013

Versatile spin-polarized electron source
patent-application, August 2015

A Memory Device, Comprising at Least One Element and Associated Method Spintronics
patent-application, October 2016

Spin oscillator device
patent-application, February 2017

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