Skyrmion based universal memory operated by electric current

Zang, Jiadong; Chien, Chia-Ling; Li, Yufan; Lake, Roger K.; Yin, Gen

Title: Skyrmion based universal memory operated by electric current

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Abstract

A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.

Inventors:: Zang, Jiadong; Chien, Chia-Ling; Li, Yufan; Lake, Roger K.; Yin, Gen

Issue Date:: 2017-09-26

Research Org.:: Johns Hopkins Univ., Baltimore, MD (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1399095

Patent Number(s):: 9773540

Application Number:: 15/213,019

Assignee:: THE JOHNS HOPKINS UNIVERSITY

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/222 - {Magnetic non-volatile memory structures, e.g. MRAM}
H01L43/10 - Selection of materials
H01L43/08 - Magnetic-field-controlled resistors

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
G11C11/18 - using Hall-effect devices

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L43/00 - Devices using galvano-magnetic or similar magnetic effects

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
G11C19/08 - using thin films in plane structure {
G11C11/161 - {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
G11C11/1659 - {Cell access}
G11C11/1675 - {Writing or programming circuits or methods}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L43/12 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES
G11C11/1673 - {Reading or sensing circuits or methods}

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DOE Contract Number:: FG02-08ER46544

Resource Type:: Patent

Resource Relation:: Patent File Date: 2016 Jul 18

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Zang, Jiadong, Chien, Chia-Ling, Li, Yufan, Lake, Roger K., and Yin, Gen. Skyrmion based universal memory operated by electric current.  United States: N. p., 2017. 
        Web.

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                    Zang, Jiadong, Chien, Chia-Ling, Li, Yufan, Lake, Roger K., & Yin, Gen. Skyrmion based universal memory operated by electric current.  United States.

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                    Zang, Jiadong, Chien, Chia-Ling, Li, Yufan, Lake, Roger K., and Yin, Gen. Tue .  
        "Skyrmion based universal memory operated by electric current".  United States.  https://www.osti.gov/servlets/purl/1399095.

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@article{osti_1399095,

  title        = {Skyrmion based universal memory operated by electric current},

  author       = {Zang, Jiadong and Chien, Chia-Ling and Li, Yufan and Lake, Roger K. and Yin, Gen},

  abstractNote = {A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2017},

  month        = {9}

}

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