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Title: Semiconductor composition containing iron, dysprosium, and terbium

An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
Inventors:
; ; ; ; ; ; ; ;
Issue Date:
OSTI Identifier:
1399091
Assignee:
UT-Battelle, LLC ORNL
Patent Number(s):
9,773,876
Application Number:
15/194,715
Contract Number:
AC05-000R22725
Resource Relation:
Patent File Date: 2016 Jun 28
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Other works cited in this record:

Rare earth metal-iron group metal target, alloy powder therefor and method of producing same
patent, September 1990

Opto-magnetic recording medium having plurality of exchange-coupled magnetic layers
patent, July 1993

Magnetostrictive transducer
patent, December 1996

Composites with large magnetostriction
patent, February 2005

Terbium-dysprosium-iron magnetostrictive materials and devices using these materials
patent, February 2007

Method of making lightweight high performance ceramic material
patent, June 2009

Magnetoresistive element
patent, December 2013

Bulk low-cost interface-defined laminated materials and their method of fabrication
patent, December 2013

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