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Title: Semiconductor composition containing iron, dysprosium, and terbium

Abstract

An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

Inventors:
; ; ; ; ; ; ; ;
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1399091
Patent Number(s):
9773876
Application Number:
15/194,715
Assignee:
UT-Battelle, LLC
Patent Classifications (CPCs):
C - CHEMISTRY C03 - GLASS C03C - CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC05-000R22725
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Jun 28
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Pooser, Raphael C., Lawrie, Benjamin J., Baddorf, Arthur P., Malasi, Abhinav, Taz, Humaira, Farah, Annettee E., Kalyanaraman, Ramakrishnan, Duscher, Gerd Josef Mansfred, and Patel, Maulik K. Semiconductor composition containing iron, dysprosium, and terbium. United States: N. p., 2017. Web.
Pooser, Raphael C., Lawrie, Benjamin J., Baddorf, Arthur P., Malasi, Abhinav, Taz, Humaira, Farah, Annettee E., Kalyanaraman, Ramakrishnan, Duscher, Gerd Josef Mansfred, & Patel, Maulik K. Semiconductor composition containing iron, dysprosium, and terbium. United States.
Pooser, Raphael C., Lawrie, Benjamin J., Baddorf, Arthur P., Malasi, Abhinav, Taz, Humaira, Farah, Annettee E., Kalyanaraman, Ramakrishnan, Duscher, Gerd Josef Mansfred, and Patel, Maulik K. Tue . "Semiconductor composition containing iron, dysprosium, and terbium". United States. https://www.osti.gov/servlets/purl/1399091.
@article{osti_1399091,
title = {Semiconductor composition containing iron, dysprosium, and terbium},
author = {Pooser, Raphael C. and Lawrie, Benjamin J. and Baddorf, Arthur P. and Malasi, Abhinav and Taz, Humaira and Farah, Annettee E. and Kalyanaraman, Ramakrishnan and Duscher, Gerd Josef Mansfred and Patel, Maulik K.},
abstractNote = {An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {9}
}

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