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Title: Semiconductor composition containing iron, dysprosium, and terbium

An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
Inventors:
; ; ; ; ; ; ; ;
Issue Date:
OSTI Identifier:
1399091
Assignee:
UT-Battelle, LLC ORNL
Patent Number(s):
9,773,876
Application Number:
15/194,715
Contract Number:
AC05-000R22725
Resource Relation:
Patent File Date: 2016 Jun 28
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Works referenced in this record: