Methods of forming CIGS films
Abstract
Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 .ANG./s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1393421
- Patent Number(s):
- 9768015
- Application Number:
- 15/170,480
- Assignee:
- Alliance for Sustainable Energy, LLC
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Jun 01
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Mansfield, Lorelle, and Ramanathan, Kannan. Methods of forming CIGS films. United States: N. p., 2017.
Web.
Mansfield, Lorelle, & Ramanathan, Kannan. Methods of forming CIGS films. United States.
Mansfield, Lorelle, and Ramanathan, Kannan. Tue .
"Methods of forming CIGS films". United States. https://www.osti.gov/servlets/purl/1393421.
@article{osti_1393421,
title = {Methods of forming CIGS films},
author = {Mansfield, Lorelle and Ramanathan, Kannan},
abstractNote = {Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 .ANG./s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 19 00:00:00 EDT 2017},
month = {Tue Sep 19 00:00:00 EDT 2017}
}
Works referenced in this record:
Techniques for enhancing performance of photovoltaic devices
patent, August 2014
- Yuan, Min; Mitzi, David B.; Liu, Wei
- US Patent Document 8,802,977
Group I-III-VI quaternary or higher alloy semiconductor films
patent-application, October 2006
- Alberts, Vivian
- US Patent Application 10/568229; 20060222558
Method and apparatus for controlling composition profile of copper indium gallium chalcogenide layers
patent-application, April 2008
- Basol, Bulent
- US Patent Application 11/740248; 20080096307
Techniques for Enhancing Performance of Photovoltaic Devices
patent-application, December 2009
- Yuan, Min; Mitzi, David; Liu, Wei
- US Patent Application 12/118230; 20090320916
High efficiency Cu(In,Ga)Se2-based solar cells: processing of novel absorber structures
conference, January 1994
- Contreras, M.A.; Tuttle, J.; Gabor, A.
- Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
Optimization of CBD CdS process in high-efficiency Cu(In,Ga)Se2-based solar cells
journal, February 2002
- Contreras, Miguel A.; Romero, Manuel J.; To, Bobby
- Thin Solid Films, Vol. 403-404, p. 204-211
Back surface band gap gradings in Cu(In,Ga)Se2 solar cells
journal, May 2001
- Dullweber, T.; Lundberg, O.; Malmström, J.
- Thin Solid Films, Vol. 387, Issue 1-2, p. 11-13
A recombination analysis of Cu(In,Ga)Se2 solar cells with low and high Ga compositions
journal, May 2014
- Li, Jian V.; Grover, Sachit; Contreras, Miguel A.
- Solar Energy Materials and Solar Cells, Vol. 124, p. 143-149
The effect of Ga-grading in CIGS thin film solar cells
journal, June 2005
- Lundberg, O.; Edoff, M.; Stolt, L.
- Thin Solid Films, Vol. 480-481, p. 520-525
Comparative study of the luminescence and intrinsic point defects in the kesterite CuZnSnS and chalcopyrite Cu(In,Ga)Se thin films used in photovoltaic applications
journal, October 2011
- Romero, Manuel J.; Du, Hui; Teeter, Glenn
- Physical Review B, Vol. 84, Issue 16, Article No. 165324
Commercial status of thin-film photovoltaic devices and materials
journal, January 2010
- Schmidtke, Johanna
- Optics Express, Vol. 18, Issue S3, p. A477-A486
Optimization of CIGS-Based PV Device through Antimony Doping
journal, January 2010
- Yuan, Min; Mitzi, David B.; Liu, Wei
- Chemistry of Materials, Vol. 22, Issue 2, p. 285-287