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Title: Methods of forming CIGS films

Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 .ANG./s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.
Inventors:
;
Issue Date:
OSTI Identifier:
1393421
Assignee:
Alliance for Sustainable Energy, LLC NREL
Patent Number(s):
9,768,015
Application Number:
15/170,480
Contract Number:
AC36-08GO28308
Resource Relation:
Patent File Date: 2016 Jun 01
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

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